Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 2513-2515
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The observation of intersubband (e1–e2) absorption induced by current injection in GaAs/GaAlAs multiquantum wells is reported. The new technique enables sensitive measurement of intersubband transitions in undoped quantum wells. The carrier concentration in the wells is easily controlled by varying the current density. The technique is demonstrated on undoped multiquantum well layers sandwiched in a p-i-n laser-diodelike structure. The lowest confined level was populated by biasing the junction and hence injecting carriers into the quantum wells. The spectra were taken by a Fourier transform infrared (FTIR) spectrometer, modulating the current and using the double modulation method. The dependence of the absorption on current intensity was examined and excess carrier concentration and lifetime were calculated. The induced absorption saturates at current densities higher than 100 mA/cm2. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113151
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