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  • 1995-1999  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1713-1715 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extended x-ray absorption fine-structure measurements at the In K edge of amorphous InP are presented. The presence of chemical disorder in the form of like-atom bonding has been unambiguously demonstrated in stoichiometric InP amorphized by ion implantation. In–In bonding comprised 14%±4% of the In–atom constituent bonds. Also, relative to the crystalline value of four P atoms, an increase in the total In coordination number to 4.16±0.32 atoms was observed for the amorphous phase, as composed of 3.56±0.19 P and 0.60±0.13 In atoms. Experimental results were consistent with recent ab initio structural calculations and, furthermore, demonstrated that amorphous InP is best described by a Polk-like continuous random network, containing both even- and odd-membered rings. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4610-4614 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The first report of the structural parameters of amorphous GaAs produced by ion implantation, as determined with extended x-ray absorption fine structure measurements, is presented herein. Relative to a crystalline sample, the nearest-neighbor bond length and Debye–Waller factor both increased for amorphized material. In contrast, the coordination numbers about both Ga and As atoms in the amorphous phase decreased to ∼3.85 atoms from the crystalline value of four. All structural parameters were independent of both implant temperature and ion dose, the latter extending two orders of magnitude beyond that required for amorphization, and as a consequence, were considered representative of intrinsic, amorphous GaAs as opposed to an implantation-induced extrinsic structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Hoboken, NJ : Wiley-Blackwell
    AIChE Journal 42 (1996), S. 1069-1076 
    ISSN: 0001-1541
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: The oxidation of asphalt is a major cause of pavement failure. The low-temperature oxidation kinetics of 14 asphalts are presented. At constant temperature and oxygen presure, asphalt oxidation occurs in two stages: (1) a relatively rapid-rate period, followed by (2) a long period of constant rate. Activation energies for the constant-rate region vary from 64 to 109 kJ/mol, and reaction orders relative to oxygen pressure vary from 0.25 to 0.61. This variation in activation energy and reaction order leads to skepticism regarding the present practices of evaluating road-condition asphalt-hardening rates at a single elevated temperature and perhaps at an elevated pressure. The asphalts occur in essentially two groups, one at high values of both activation energy and reaction order and the other at low values of each. The data indicate the existence of an isokinetic temperature near 100°C. The degree of oxidation that occurs during the initial rapid-rate region varies inversely with the oxygen reaction order of the constant-rate region.
    Additional Material: 13 Ill.
    Type of Medium: Electronic Resource
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