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  • 1995-1999  (23)
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  • 1
    Electronic Resource
    Electronic Resource
    Magnetic-field-induced hybridization of electron subbands in a coupled double quantum well (1998)
    Springer
    JETP letters 67 (1998), S. 595-601 
    Details
    ISSN: 1090-6487
    Keywords: 73.20.Dx ; 73.40.Hm
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract We employ a magnetocapacitance technique to study the spectrum of the soft two-subband (or double-layer) electron system in a parabolic quantum well with a narrow tunnel barrier at the center. In this system, when unbalanced by gate depletion, two sets of quantum oscillations are observed at temperatures T≳30 mK: one originates from the upper electron subband in the closer-to-the-gate part of the well, and the other indicates the existence of common gaps in the spectrum at integer fillings. For the lowest filling factors υ=1 and υ=2, both the presence of a common gap down to the point of the one-to two-subband transition and their nontrivial magnetic field dependences point to magnetic-field-induced hybridization of electron subbands.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567732
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of hole-hole scattering on the conductivity of the two-component 2D hole gas in GaAs/(AlGa)As heterostructures (1998)
    Springer
    JETP letters 67 (1998), S. 113-119 
    Details
    ISSN: 1090-6487
    Keywords: 73.40.Kp ; 73.50.Jt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The temperature dependences of the zero-magnetic-field resistivity ρ and magnetoresistance of the 2D hole gas in GaAs/(AlGa)As heterostructures are investigated in the temperature interval 0.4–4.2 K. As the temperature T is increased, (i) the resistivity ρ grows with a decreasing derivative dρ/dT, and (ii) the positive magnetoresistance diminishes from about 40% at T=0.4 K to about 1% at T=4.2 K. The results are explained in terms of a temperature-dependent mutual scattering of the holes, accompanied by momentum transfer between two different spin-split subbands.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.567643
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    A two-dimensional ultrahigh vacuum positioner for scanning tunneling microscopy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 1403-1405 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A two-dimensional ultrahigh vacuum compatible positioner is presented. The positioner uses two piezoelectric inchworms which allow for motions of up to 1 cm with a precision of 4 nm mounted at right angles to each other in order to give two dimensions of motion. Images of three-dimensional In0.3Ga0.7As islands in cross section are presented to demonstrate the functionality of the positioner. It is found that motion towards the tip is smooth, while motion in the perpendicular direction is less smooth. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148773
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Fabrication and characterization of 100-nm-thick GaAs cantilevers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3591-3593 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe a new process for making submicron, micromechanical cantilevers out of GaAs epilayers grown by molecular beam epitaxy. The extremely high aspect ratios of these cantilevers (typically 100 nm thick and 100 μm long) give spring constants as low as 10−4 N/m. We present characterizations of the cantilevers' resonant frequencies, quality factors, and spring constants. The ability to fabricate III–V GaAs-based mechanical microstructures offers new opportunities for integration with electronics for strain-sensitive force detection. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147250
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Reduced thermal conductivity in low-temperature-grown GaAs (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2325-2327 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal conductivity of low-temperature-grown GaAs(LT GaAs) was measured at room temperature using a self-heated photolithographically patterned platinum wire on the surface of the sample. Finite element calculations were performed to extract the thermal conductivity from the nonlinear I–V characteristic of the wires. For LT GaAs grown at a substrate temperature of 240 °C, the thermal conductivity was found to be only 23% of the value for stoichiometric GaAs. Rapid thermal annealing of the sample at 650 °C for 30 s increased the thermal conductivity to 46% of the GaAs value. Strong phonon scattering by point defects could account for reduced thermal conductivity in the as-grown material. The reduced thermal conductivity in the annealed material, however, is not consistent with our current understanding of the defects in annealed LT GaAs. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123839
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  • 6
    Electronic Resource
    Electronic Resource
    Using soft lithography to fabricate GaAs/AlGaAs heterostructure field effect transistors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2020-2022 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter describes the fabrication of functional GaAs/AlGaAs field effect transistors using micromolding in capillaries—a representative soft lithographic technique. The fabrication process involved three soft lithographic steps and two registration steps. Room temperature characteristics of these transistors resemble those of field effect transistors fabricated by photolithography. The fabrication of functional microelectronic devices using multilayer soft lithography establishes the compatibility of these techniques with the processing methods used in device fabrication, and opens the door for their development as a technique in this area. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119774
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Photon-assisted tunneling in GaAs/AlGaAs superlattices up to room temperature (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2689-2691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photon-assisted transport is shown to be a remarkably robust phenomenon in sequential resonant superlattices with a large energy separation between the ground state and the first excited state of the quantum wells. Photon-assisted tunneling involving up to seven photons per tunneling event, stands out very clearly. The one-photon channel is observed up to 300 K. This implies that these superlattices are a gain medium at THz frequencies even at room temperature and potentially important for the future design of THz sources. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117679
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  • 8
    Electronic Resource
    Electronic Resource
    Far-infrared emission from parabolically graded quantum wells (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3522-3524 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed grating coupled far infrared (FIR) emission from parabolically graded quantum wells (PQWs) by the application of an in-plane electric field. The peak emission frequency from different wells matches the designed harmonic oscillator frequency for each well, as determined by the curvature of the PQWs. This is a confirmation that the generalized Kohn theorem applies for emission of FIR radiation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117232
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Faraday–Stark optoelectronic effect (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3731-3733 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An optoelectronic effect based on Faraday or Kerr rotation and the quantum-confined Stark shift is demonstrated. It is novel in that the degree of rotation is controlled by an electric field as opposed to a magnetic field. By applying an electric field to a quantum well structure, the Faraday rotation can be tuned into resonance, thereby varying the rotation angle of plane polarized light. We have observed a resonant rotation of 10° in GaAs at a magnetic field of 1 T. By applying a gate voltage of 2 V to a GaAs/AlGaAs superlattice structure, we observed a change in rotation of 1.3° at 2 K. The Faraday–Stark effect could be useful in electrically controlled light switches and high-speed optical modulators. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117204
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  • 10
    Electronic Resource
    Electronic Resource
    Interface roughness and alloy-disorder scattering contributions to intersubband transition linewidths (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2554-2556 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report measurements of intersubband absorption in single semiconductor quantum wells of different well widths and alloy compositions. The well width dependence of the intersubband absorption linewidth is consistent with broadening dominated by interface roughness. The linewidth, however, is found to be relatively unaffected by alloy composition in the quantum well, making alloying an effective tool in the design of quantum well optical devices relying on intersubband transitions. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117737
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