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  • 1
    Electronic Resource
    Electronic Resource
    Application of molecular genetic markers for the differentiation of bream (Abramis brama L.) populations from the rivers Main and Danube (1998)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of applied ichthyology 14 (1998), S. 0 
    Details
    ISSN: 1439-0426
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: RAPD (random amplified polymorphic DNA), RAMPO (random amplified microsatellite polymorphism), SCAR (sequence-characterized amplified regions), microsatellite markers and heteroduplex analysis were applied to differentiate bream (Abramis brama L.) populations from the rivers Main and Danube. Three molecular genetic markers were established; the frequencies of these markers and already established markers were estimated in three bream populations from the Danube River and two bream populations from the Main River. The results showed variation among populations from different river systems as well as variation among samples from the same river basin.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1439-0426.1998.tb00613.x
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  • 2
    Electronic Resource
    Electronic Resource
    Detection of allelic variation within the growth hormone gene in common bream using heteroduplex analysis (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of fish biology 48 (1996), S. 0 
    Details
    ISSN: 1095-8649
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: A novel method, heteroduplex analysis, was applied for detecting variation in an amplified growth hormone (GH) gene segment of common bream Abramis brama. Two-allele polymorphism was detected within a 262 bp restriction fragment. The frequency of the variant haplotype in the Main River was 0–50 and in the Danube River 0–32, but the difference was Statistically not significant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1095-8649.1996.tb01823.x
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  • 3
    Electronic Resource
    Electronic Resource
    On the nature of the electric-field effect on YBa2Cu3O7−δ grain boundary junctions employing epitaxial SrTiO3 gate insulators (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1027-1029 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated Josephson field-effect transistors based on YBa2Cu3O7−δ bicrystal grain-boundary junctions (GBJs) and epitaxial SrTiO3 films as gate insulators. The SrTiO3 gate insulator shows high products of the breakdown field Ebd and the dielectric constant εr up to Ebdεr=1.3×1010 V/m allowing measurements over a wide range of applied gate electric-field Eg. The critical current Ic of the GBJs is found to depend highly nonlinear on Eg. Remarkably, the measured Ic(Eg) are very similar to the εr(Eg) curves. This strongly suggests that the observed electric-field effect is not due to a field-induced change in carrier concentration but is related to the dielectric properties of the SrTiO3 gate insulator. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123444
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  • 4
    Electronic Resource
    Electronic Resource
    Strain effects and microstructure of epitaxial manganite thin films and heterostructures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3636-3638 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown epitaxial La2/3Sr1/3MnO3 (LSMO) and La2/3Ba1/3MnO3 (LBMO) thin films as well as La2/3Ba1/3MnO3/SrTiO3 heterostructures by pulsed-laser deposition. The microstructure of the films was analyzed by x-ray diffraction and transmission electron microscopy. A significant effect of strain due to lattice mismatch was found. Whereas the thick LBMO films show perfect epitaxy and grow coherently strained over the full film thickness, the LSMO films were found to be composed of two layers separated by an intrinsic interface region containing a high density of defects. The approximately 60 nm thick bottom layer grows coherently on the SrTiO3 (STO) substrate and is highly strained, whereas the top layer is almost strain free. The LBMO/STO heterostructures are coherently strained and show a very low density of defects and sharp interfaces. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123206
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  • 5
    Electronic Resource
    Electronic Resource
    Analysis of the critical current density in grain boundary Josephson junctions on a nanometer scale (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2289-2291 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The critical current Ic of YBa2Cu3O7−δ bicrystal grain boundary Josephson junctions (GBJs) have been measured in high magnetic fields up to B=12 T. Even at the highest applied magnetic fields, Ic varied periodically with varying magnetic field. By comparing the envelope of the measured Ic(B) dependencies to model calculations we obtain information on the spatial distribution of the supercurrent density jc on a length scale down to below 1 nm. Our analysis gives clear evidence that jc has spatial inhomogeneities on all length scales down to 1 nm with a probability distribution p(a) for the characteristic length scale a of the inhomogeneities. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113263
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  • 6
    Electronic Resource
    Electronic Resource
    Scaling behavior of 1/f noise in high-temperature superconductor Josephson junctions (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 120-122 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Extensive studies of the low frequency 1/f noise in high-temperature superconducting (HTS) Josephson junctions of various types and materials have been performed for a wide range of operating parameters. The origin of the measured voltage fluctuations can be traced back to the trapping and release of charge carriers in trapping centers in an insulating barrier, giving rise to correlated fluctuations of the junction critical current Ic and normal-state resistance Rn. We observed a linear dependence of the normalized critical current and resistance fluctuations on Rn, which suggests a constant density of trapping centers for the HTS Josephson junctions. The scaling of the normalized fluctuations is in good agreement with the previously found scaling relation IcRn∝1/Rn and supports a junction model assuming a leaky tunnel barrier. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119281
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  • 7
    Electronic Resource
    Electronic Resource
    Low temperature scanning electron microscopy study of YBa2Cu3O7−δ multilayer dc SQUID magnetometers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1555-1557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low temperature scanning electron microscopy (LTSEM) has been used to analyze the superconducting properties of integrated magnetometers involving a dc superconducting quantum interference device. The study yielded spatially resolved information on the critical temperature Tc and critical current density Jc in the upper and lower superconducting layers of the YBa2Cu3O7−δ/SrTiO3/YBa2Cu3O7−δ structure. The Tc of the lower film was depressed by several kelvin, and the Jc of the upper film was lower where it crossed the edge of a lower YBa2Cu3O7−δ film covered with SrTiO3. A gradient in Tc was observed in the lower film near the edge of a via, arising presumably from oxygen diffusion during fabrication. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115697
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  • 8
    Electronic Resource
    Electronic Resource
    Asymmetric high temperature superconducting Josephson vortex-flow transistors with high current gain (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1010-1012 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated Josephson vortex-flow transistors (JVFTs) based on asymmetric parallel arrays of YBa2Cu3O7−δ bicrystal grain boundary junctions. The critical current Ic and the voltage V at fixed bias current Ib were measured as a function of the control current Ictrl through a control line inductively coupled to the array. For JVFTs with an asymmetric in-line geometry a high current gain g=∂Ic/∂Ictrll ranging between about 20 at 40 K and 14 at 70 K was achieved. This current gain is much higher than that obtained for symmetric devices and results from the self-field effect of the electrode currents. In contrast to the current gain the transresistance rm=∂V/∂Ictrl of the JVFTs could not be enhanced by an asymmetric device structure. The current-voltage characteristics of the asymmetric JVFTs show pronounced step-like structures caused by the self-field of the electrode currents. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114713
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  • 9
    Electronic Resource
    Electronic Resource
    Correlation of critical current and resistance fluctuations in bicrystal grain boundary Josephson junctions (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1929-1931 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed a detailed analysis of the low frequency 1/f noise in YBa2Cu3O7−δ and Bi2Sr2CaCu2O8+x grain boundary Josephson junctions (GBJs) fabricated on SrTiO3 bicrystal substrates. The normalized fluctuation of the critical current, δIc/Ic, and the normal resistance, δRn/Rn were found to be almost independent of temperature and the misorientation angle. Furthermore, the magnitude of the fluctuations is very similar for both high-Tc cuprates. Correlation experiments showed that the fluctuations of Ic and Rn are anti-correlated. Our analysis strongly suggests that the source of 1/f noise in high-Tc bicrystal GBJs are localized defect states in an insulating grain boundary barrier with fluctuating electron occupation. The effective charge trapping time within single traps was found to decay exponentially with increasing bias voltage. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114571
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  • 10
    Electronic Resource
    Electronic Resource
    La1.85Sr0.15CuO4−δ bicrystal grain boundary Josephson junctions (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3341-3343 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated La1.85Sr0.15CuO4−δ grain boundary Josephson junctions (GBJs) fabricated on [001] tilt SrTiO3 bicrystals with misorientation angles of 24° and 36.8°. The resistive transition and the current–voltage characteristics of the GBJs are found to be close to those predicted by the resistively shunted junction (RSJ) model. Their product of the critical current density, Jc, and the normal resistance times area ρn, scales proportional to about (Jc)q with q=0.5–0.6 similar to what is found for YBa2Cu3O7−δ GBJs. By analyzing Fiske resonances the Swihart velocity of the GBJs and the ab-plane London penetration depth of La1.85Sr0.15CuO4−δ are obtained to c¯=2.5×106 m/s and λL=200 nm at 4.2 K, respectively. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116051
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