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  • 1995-1999  (4)
  • 1
    Electronic Resource
    Electronic Resource
    Serum lipoprotein(a) concentrations and apolipoprotein(a) phenotypes in the families of NIDDM patients (1995)
    Springer
    Diabetologia 38 (1995), S. 1434-1442 
    Details
    ISSN: 1432-0428
    Keywords: Apolipoprotein(a) ; diabetes mellitus ; family study ; lipids ; lipoprotein(a) ; lipoproteins ; phenotypes
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary We studied the quantitative and qualitative characteristics of lipoprotein(a) [Lp(a)] as a function of apolipoprotein(a) [apo(a)] phenotype in 87 members (42 males, 45 females) of 20 diabetic families, 26 of whom were diagnosed with non-insulin-dependent diabetes mellitus (NIDDM) with moderate glycaemic control (HbA1c7.1±1.2%). Apo(a) phenotyping was performed by a sensitive, high-resolution technique using SDS-agarose/gradient PAGE (3–6%). To date, 26 different apo(a) phenotypes, including a null type, have been identified. Serum Lp(a) levels of NIDDM patients and non-diabetic members of the same family who had the same apo(a) phenotypes were compared, while case control subjects were chosen from high-Lp(a) non-diabetic and low-Lp(a) non-diabetic groups with the same apo(a) phenotypes in the same family. Serum Lp(a) levels were significantly higher in NIDDM patients than in non-diabetic subjects (39.8±33.3 vs 22.3±19.5 mg/dl, p〈0.05). The difference in the mean Lp(a) level between the diabetic and non-diabetic groups was significantly (p〈0.05) greater than that between the high-Lp(a) non-diabetic and low-Lp(a) non-diabetic groups. An analysis of covariance and a least square means comparison indicated that the regression line between serum Lp(a) levels [log Lp(a)] and apo(a) phenotypes in the diabetic patient group was significantly (p〈0.01) elevated for each apo(a) phenotype, compared to the regression line of the control group. These data, together with our previous findings that serum Lp(a) levels are genetically controlled by apo(a) phenotypes, suggest that Lp(a) levels in diabetic patients are not regulated by smaller apo(a) isoforms, and that serum Lp(a) levels are greater in diabetic patients than in non-diabetic family members, even when they share the same apo(a) phenotypes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00400604
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Surface Reconstruction and As Surfactant Effects on MBE-Grown GaN Epilayers (1998)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 264-268 (Feb. 1998), p. 1167-1172 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/03/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.264-268.1167.pdf
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Source mechanisms of volcanic tremor and low-frequency earthquakes associated with the 1988–89 eruptive activity of Mt Tokachi, Hokkaido, Japan (1995)
    Oxford, UK : Blackwell Publishing Ltd
    Geophysical journal international 121 (1995), S. 0 
    Details
    ISSN: 1365-246X
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences
    Notes: During the 1988–89 eruptive activity of Mt Tokachi, Hokkaido, Japan, volcanic tremor and many low-frequency earthquakes were observed by the National University Team at three stations close to the active crater. We calculated the spectral ratios of the tremor and the low-frequency events which were associated with the ash emission from the active crater, and showed that the ratios of both these events have similar features, indicating similar source mechanisms and focal depths. We further resolved the source mechanism and the focal depth of these events by fitting the theoretical spectral ratios to the observed ones, assuming three source models that are consistent with the eruptive activity. The single force model, which represents a counter force of eruption, can explain well both the observed spectral ratios and the distributions of ballistic rocks emitted from the active crater. On the other hand, though the solutions of the tensile crack model and the cylindrical model, which represent movements of a crack or a conduit due to the ash emissions, can explain the observed spectral ratios as well as the single force model, they cannot explain the surface configurations of the volcano and the direction of the ash emissions simultaneously. The focal depths were estimated at less than 0.5 km. As a result, we concluded that the tremor and the low-frequency events were excited by single force applied to the shallow part of the crater.We further calculated the spectral ratios of the explosion earthquakes observed at Mt Tokachi, and identified similarities of the source mechanisms to those of the tremor and the low-frequency events. This suggests that source mechanisms of volcanic earthquakes and tremors associated with eruptions (emissions of volcanic materials from craters) are similar while these events have different source time functions and magnitudes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-246X.1995.tb05725.x
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  • 4
    Electronic Resource
    Electronic Resource
    Arsenic mediated reconstructions on cubic (001) GaN (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1025-1027 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The 4×1 (respectively 1×1) (001) GaN surfaces obtained when molecular-beam-epitaxy (MBE) growth is carried out on (001) cubic SiC were exposed to an As background pressure in the MBE chamber: The reconstructions rapidly and irreversibly changed to 2×2 [respectively c(2×2)] as usually observed for GaN growth on (001) GaAs. The usual reversible 2×2/c(2×2) transitions were consequently observed when bringing the Ga flux up or down. The respective positions for the 4×1/1×1 and 2×2/c(2×2) transitions were worked out as a function of the growth parameters. These observations indicate that the 2×2 and c(2×2) GaN surface reconstructions are mediated by As atoms which we tentatively assign to a surfactant effect. A simple structural model involving As dimers is proposed that accounts for Ga coverages of 0.5 and 1 monolayer for the 2×2 and c(2×2) growth regimes, respectively. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118433
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    Paper (German National Licenses)
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