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  • 1
    Electronic Resource
    Electronic Resource
    Electrical characteristics of metal/AlN/n-type 6H–SiC(0001) heterostructures (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2873-2875 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal/AlN/n-type 6H–SiC(0001) heterostructures have been prepared by growing wurtzite AlN layers on vicinal 6H–SiC(0001) using gas-source molecular beam epitaxy. High-resolution transmission electron microscopy results show that the interface between the AlN layer and the Si-terminated 6H–SiC substrate is microstructurally abrupt, but contains defects originating at step sites on the 6H–SiC surface. The interface is found to have a low density of trapped charges of 1×1011 cm−2 at room temperature without any postgrowth treatment. This value is comparable to those reported for thermally grown and deposited oxides on n-type 6H–SiC(0001), and indicates the formation of a high quality interface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117347
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  • 2
    Electronic Resource
    Electronic Resource
    Photoluminescence studies of porous silicon carbide (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2250-2252 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed investigation of the dependence of the photoluminescence from porous silicon carbide on preparation conditions and starting material is presented. Porous silicon carbide prepared from different polytypes shows almost identical emission spectra, demonstrating a clear impedance of the band-gap energy of a particular SiC polytype. Emission bands with peak energies of 2.43, 2.22, 2.07, and 1.93 eV were resolved with the use of selective excitation by tuning the excitation wavelength. The origin of luminescence is suggested to relate to defect states produced at the etched surface. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113182
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  • 3
    Electronic Resource
    Electronic Resource
    Exciton lifetimes in GaN and GaInN (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 840-842 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results from temperature dependent photoluminescence (PL) transient measurements on metalorganic vapor phase epitaxy grown epitaxial layers of GaN and GaInN are reported. In sufficiently pure GaN layers the free-exciton PL dominates even at the lowest temperatures (2 K), and the intrinsic excitonic lifetimes can be obtained. We report a value of about 125 ps for the radiative lifetime of the free exciton in GaN at 2 K, as obtained from the PL transients of a 3 μm buried undoped GaN layer sandwiched between AlN and GaInN. The PL decay time in the ternary alloy GaInN, which is dominated by localized excitons at low temperatures, is much longer, about 500 ps. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115522
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  • 4
    Electronic Resource
    Electronic Resource
    SiC power device passivation using porous SiC (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1501-1502 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel technique for the passivation of high power SiC p-n diodes using porous SiC is demonstrated. An increase from around 250 to 600 V in the reverse breakdown voltage is observed following the passivation treatment. The breakdown mode is also reversible in the passivated case in contrast to the permanent degradation in the nontreated device. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113668
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  • 5
    Electronic Resource
    Electronic Resource
    Elimination of SiC/SiO2 interface states by preoxidation ultraviolet-ozone cleaning (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2141-2143 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The preoxidation cleaning of silicon carbide surfaces (3C, 4H, 6H polytypes) by exposing them to ultraviolet radiation and oxygen is shown to produce a significant improvement in the electronic properties of SiC/SiO2 interfaces. It is found that this treatment results in a removal of defect species, otherwise present at the SiC surface after thermal oxidation of SiC. Carbon clusters are proposed as the attacked species responsible for a substantial part of the SiC/SiO2 interface states. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115611
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  • 6
    Electronic Resource
    Electronic Resource
    Interfacial quantum well states of Xe and Kr adsorbed on Ag(111) (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 3883-3891 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The energies and dispersions of the image states and quantum well electronic states in layers of Xe and Kr on a Ag(111) substrate were determined by angle-resolved two-photon photoemission (ARTPPE). For Xe, we measured binding energies of unoccupied electronic states for 1–9 layers and their parallel dispersion out to 4 layers. We measured the binding energies for a monolayer of Kr and dispersions for one and two layers. The n=2 and n=3 image states of the bare metal evolve into quantum well states of the layer (states of the Xe conduction band discretized by the boundary conditions of a 2-D slab) at higher Xe thicknesses, where the n=2,3 states exhibit both a perpendicular and parallel dispersion similar to that of the bulk Xe conduction band. The n=1 state appears to evolve with coverage as an image state screened by the Xe layer, with appreciable electron density in the vacuum. A continuum dielectric model (modified image state picture) reproduces the gross trends in the data, while an explicit quantum well analysis is used to extract the bulk Xe conduction band dispersion. A simple model which takes into account the band structures of the substrate and the overlayer, as well as the image potential, gives good agreement with the binding energy data. The combination of high energy and momentum resolution along both the surface parallel and surface normal yields very precise measurements of the bulk Xe conduction band as well as information about the behavior of conduction band electrons at interfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.472209
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  • 7
    Electronic Resource
    Electronic Resource
    FEMTOSECOND DYNAMICS OF ELECTRONS ON SURFACES AND AT INTERFACES1 (1997)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Physical Chemistry 48 (1997), S. 711-744 
    Details
    ISSN: 0066-426X
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Chemistry and Pharmacology , Physics
    Notes: Abstract Two-photon photoemission is a promising new technique that has been developed for the study of electron dynamics at interfaces. A femtosecond laser is used to both create an excited electronic distribution at the surface and eject the distribution for subsequent energy analysis. Time- and momentum-resolved two-photon photoemission spectra as a function of layer thickness fully determine the conduction band dynamics at the interface. Earlier clean surface studies showed how excited electron lifetimes are affected by the crystal band structure and vacuum image potential. Recent studies of various insulator/metal interfaces show that the dynamics of excess electrons are largely determined by the electron affinity of the adsorbate. In general, electron dynamics at the interface are influenced by the substrate and adlayer band structures, dielectric screening, and polaron formation in the two-dimensional overlayer lattice.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.physchem.48.1.711
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  • 8
    Electronic Resource
    Electronic Resource
    THE FRACTURE MECHANISM OF 475°C EMBRITTLEMENT IN A DUPLEX STAINLESS STEEL (1996)
    Oxford, UK : Blackwell Publishing Ltd
    Fatigue & fracture of engineering materials & structures 19 (1996), S. 0 
    Details
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: The mechanism of “475°C embrittlement” of a duplex stainless steel was investigated using finite element modelling of the stress distribution at brittle fracture initiation. Brittle fracture initiated at a critical shear stress, which increased with ferrite hardness. The fracture stress was affected by the duplex microstructure. Fracture was nucleated by deformation twins, which were identified using electron back-scatter diffraction. The ductile-to-brittle fracture transition was sensitive to age-hardening and could be described simply by the effect of age-hardening and test temperature on the yield stress.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1460-2695.1996.tb01028.x
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  • 9
    Electronic Resource
    Electronic Resource
    Persistence and effect of management practices on organochlorine residues in soils of subtropical New South Wales (1995)
    Springer
    Bulletin of environmental contamination and toxicology 54 (1995), S. 177-184 
    Details
    ISSN: 1432-0800
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00197428
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  • 10
    Electronic Resource
    Electronic Resource
    Synergy between synthetic oestrogens? (1997)
    [s.l.] : Nature Publishing Group
    Nature 385 (1997), S. 494-494 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Arnold et all recently reported that a range of chemicals could act synergistically to bind and activate the human oestrogen receptor (hER) in vitro. Most markedly, a 1:1 mixture of the insecticides dieldrin and endosulfan produced a 1,000-fold higher activity than when present alone. Arnold et ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/385494a0
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