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  • 1995-1999  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3797-3803 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental results and a model describing long-term radiation-induced changes in extrinsic photoconductors are presented. Experiments, carried out at low temperatures and low photon backgrounds, simulated typical operating conditions of extrinsic infrared detectors used in space- based platforms and instruments. The observed changes in the carrier lifetime and current–voltage characteristics at a low electric field, as well as a long-term relaxation of the effects after removal of the irradiation are related to a recharging of the impurities in the bulk during the irradiation. The proposed model agrees well with experimental data and despite its simplicity, provides relevant information on how to deal with these effects in practical applications. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3432-3434 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on pulse laser oscillation from a p-Ge intervalence band (IVB) laser composed of a Ga-doped Ge crystal measuring about 1×1×5 mm3 which is a very small volume compared with those reported so far for shallow-acceptor-doped Ge. Laser oscillation is only achieved under uniaxial stresses greater than 1300 kg/cm2. We find that the optimum stress for lasing is around 3500–4100 kg/cm2 when the p-Ge IVB lasers are operated at liquid helium temperature. The minimum electric power needed for lasing is only 280 W at a peak period of pulse emission. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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