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  • 1
    Electronic Resource
    Electronic Resource
    Electric Field Pulses Can Induce Apoptosis (1999)
    Springer
    The journal of membrane biology 169 (1999), S. 103-109 
    Details
    ISSN: 1432-1424
    Keywords: Key words: Electropermeabilization — Electroporation — Apoptosis — Jurkat T-lymphoblast — HL-60 — Caspase
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Chemistry and Pharmacology
    Notes: Abstract. Injection of electric field pulses of high intensity (kV/cm) and short duration (microsecond range) into a cell suspension results in a temporary increase of the membrane permeability due to a reversible electric breakdown of the cell membrane. Here we demonstrate that application of supercritical field pulses between 4.5 and 8.1 kV/cm strength and 40 μsec duration induce typical features of apoptosis in Jurkat T-lymphoblasts and in HL-60 cells including DNA fragmentation and cleavage of the poly(ADP ribose) polymerase. Apoptosis induction did not depend on the presence of any particular electrolyte in the extracellular medium. However, no apoptosis was observed in solutions without a minimum amount of salt. Apoptotic DNA fragmentation was prevented by the caspase inhibitor zVAD.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002329900522
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  • 2
    Electronic Resource
    Electronic Resource
    The transition from single phonon to multiphonon energy transfer in atom–surface collisions (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 1234-1247 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The angular distributions and time-of-flight spectra of nearly monoenergetic He atoms with incident energies of 82 meV and 112 meV have been measured after scattering from a clean Cu(001) surface over a large range of crystal temperatures from 100 K to 1000 K. With increasing temperatures the sharp diffraction and phonon peaks of the low temperature quantum regime become broad and featureless as expected for the multiphonon classical regime. The results are compared with a quantum mechanical theory which is able to explain the height, position, width, and area under the multiphonon maximum. In the classical regime, the temperature dependence of the inelastic intensity indicates that the He atoms are reflected by a smooth vibrating barrier presumably due to the surface electron density, and not by a lattice of discrete repulsive surface atomic cores. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.473220
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  • 3
    Electronic Resource
    Electronic Resource
    A helium atom scattering study of the growth and dynamics of CH4 and C2H6 on Cu(001) (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 2502-2512 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The growth, structure and dynamics of methane and ethane monolayers on Cu(001) have been studied using high resolution helium atom scattering. Specular intensity measurements of the growth behavior reveal an island growth mode for methane and ethane, indicative of an attractive interatomic interaction. Diffraction measurements show that the methane monolayer forms a hexagonal structure, incommensurate in one direction, with a lattice constant of 4.18 Å, while ethane forms a structure with an interatomic distance of 5.10 Å. The frustrated translational vibrations perpendicular to the surface (S mode) of methane and ethane have been measured with inelastic helium scattering and have frequencies of 6.5 meV and 6.8 meV, respectively. In addition, the desorption energies were determined to be 165 meV for methane and 260 meV for ethane, in both cases independent of coverage. These results are compared with recent measurements made for C2H4 and larger alkanes adsorbed on Cu(001). © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.473156
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  • 4
    Electronic Resource
    Electronic Resource
    Helium atom scattering from isolated CO molecules on copper(001) (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 2093-2098 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Angular distributions have been measured for helium atoms scattering from isolated CO molecules chemisorbed on a Cu(001) surface as a function of incident beam energy between 9.4 and 100 meV and surface coverage from 1.3% ML to 9.3% ML. Up to five oscillations are clearly observed in the angular distributions. The parallel wave vector transfers of the peaks vary only slightly with incident energy and are independent of coverage up to 20% of a c(2×2) layer. New hard wall scattering calculations show that all of the distinct peaks observed can be explained by interference structures involving both Fraunhofer diffraction and illuminated face scattering from CO molecules with an approximate hard wall radius of 2.4 A(ring) with no evidence of the classical rainbows predicted in several recent theoretical studies. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.472075
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  • 5
    Electronic Resource
    Electronic Resource
    Response to "Comment on ‘Experimental determination of a longitudinal phonon dispersion curve in a quasi-two-dimensional system' " [J. Chem. Phys. 107, 4443 (1997)] (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 4445-4445 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.474806
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  • 6
    Electronic Resource
    Electronic Resource
    Experimental determination of a longitudinal phonon dispersion curve in a quasi-two-dimensional system (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 106 (1997), S. 6194-6197 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The structural and dynamical properties of a monolayer of Xe atoms adsorbed on a Cu(001) surface have been studied with high-resolution He-atom scattering. Angular distributions reveal a phase-transition from the high-temperature in commensurate phase to a new, more densely packed, phase upon cooling below 65 K. For both phases the strongly dispersive longitudinal phonon mode could be detected. A lattice-dynamical analysis yields a substrate mediated softening of the Xe–Xe radial force constant down to 25% of that obtained from gas-phase potentials and a fit of Xe bulk phonon data. This decrease is much larger than assumed in previous work for noble gas atoms adsorbed on metals. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.473242
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  • 7
    Electronic Resource
    Electronic Resource
    Quasielastic helium atom scattering measurements of microscopic diffusion of CO on the Ni(110) surface (1996)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 11297-11304 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The microscopic diffusion of CO on the Ni(110) surface has been studied by quasielastic helium atom scattering. From the temperature dependence of the energetic broadening of the quasielastic peak measured at a parallel wave vector near the Brillouin zone boundary, the activation energies for diffusion have been determined to be Ediff=57±4 and 35±4 meV for diffusion parallel to the rows (〈11¯0〉) and perpendicular to the rows (〈001〉), respectively. The activation energies are a factor 2–6 smaller and the preexponential diffusion coefficients orders of magnitude larger than obtained in recent laser measurements of chemical diffusion coefficients, indicating that diffusion over distances from about a few A(ring)ngstroms up to 30 A(ring) is much faster than over the much larger distances probed in macroscopic diffusion measurements. The difference is attributed to the impeding effect of step edges or impurities on the latter measurements. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.472983
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  • 8
    Electronic Resource
    Electronic Resource
    Magnetic measurements on the TCV Tokamak (1998)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 2333-2348 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The TCV Tokamak was designed to create a large variety of plasma shapes. Such a large flexibility requires high precision magnetic measurements with a good spatial coverage. This article gives a detailed description of the magnetic sensor geometry, fabrication, calibration, the associated electronics, and the diagnostic operation and monitoring. A substantial effort has been made to quantify the precision in the measurements and a novel method has been developed to derive corrections in the sensor position and calibration which optimise the consistency of the entire measurement set. Accuracy of 0.5 mWb in the poloidal flux and 1 mT in the magnetic field with a position error of a few mm have been achieved. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148940
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of SiGe quantum-well p-channel MOSFETs (1995)
    Springer
    Journal of materials science 6 (1995), S. 325-329 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Ge0.2Si0.8 Quantum Well p-MOSFETs with very thin gate oxides of 5 nm, 2.5 nm cap-layer and an optional Boron doped delta layer fabricated in a standard 0.6 Μm CMOS process have been analysed by C-V and I-V measurements at different temperatures. The maximum low field hole mobility calculated from drain conductance was increased by 70%; from 67 cm2/Vs for a reference Silicon epi transistor to 115 cm2/Vs at 300 K and by 100%; from 110 cm2/Vs to 220 cm2/Vs at 98 K. These values were obtained at relatively high doping concentrations in the channel, the mobile channel charge was directly obtained from high and low frequency C-V curves. The influence of the net doping density in the channel region on the device characteristics is demonstrated. In the high electric field region the drain current in the saturation region was improved by 20%; for the same threshold voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00125887
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  • 10
    Electronic Resource
    Electronic Resource
    Boostering antitoxic diphtheria immunity in adults (1996)
    Springer
    Infection 24 (1996), S. 168-169 
    Details
    ISSN: 1439-0973
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01713331
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