ISSN:
1572-817X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract We report the temperature dependence and input optical power tolerance of an InGaAsP electroabsorption (EA) modulator module. Thermal stability of the module was found to be very high. The optimum ΔE g at 20°C has been estimated to be 48–55 meV. At ΔE g of 53 meV, the insertion loss was almost independent of the temperature, while the driving voltage was strongly dependent on the temperature. The breakdown phenomena were investigated in detail; these occurred under conditions of very high input power and/or high bias voltage. Input power for breakdown was smaller for higher bias voltage or smaller ΔE g. Allowable maximum input optical power has a large margin (〉5 dB) for the conventional input level in practical systems.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00943631
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