Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
83 (1998), S. 3077-3080
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have used a set of complementary experimental techniques to characterize an epitaxial structure (25 nm Fe)/GaAs(001) annealed at 450 °C under ultrahigh vacuum conditions. The solid state interdiffusion leads to the formation of an epitaxial reaction layer made of Fe2As patches embedded in a Ga rich Fe3Ga2−XAsX ternary phase. The epitaxial character of this layer explains how the usually reported epitaxial growth of Fe on GaAs performed in the temperature range of 175 to 225 °C is possible in spite of the species intermixing occurring at the interface. Moreover, the observed grains of Fe2As explain the decrease of magnetization at the interface in such contact, since Fe2As is an antiferromagnetic alloy. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.367063
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