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  • 1995-1999  (7)
  • 1
    Electronic Resource
    Electronic Resource
    Defect formation and annealing behavior of InP implanted by low-energy 15N ions (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 738-746 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Defect formation has been studied in nitrogen-implanted III–V compound semiconductor material InP. Sulphur-doped n-type (100) InP samples were implanted at room temperature with 30 keV 15N+ion doses of 1014–1016 N atoms cm−2. The implanted samples were subjected to isochronal vacuum annealing in the temperature range of 450–650 °C. The annealing behavior of nitrogen atom distributions, implantation-induced displacements of indium atoms, vacancy-type defects, and damage annealing were studied by nuclear resonance broadening, secondary ion mass spectrometry, ion backscattering and channeling, and slow positron annihilation techniques. Doses above 1015 N atoms cm−2 were found to produce amorphous layers extending from the surface to depths beyond the deposited energy distribution, up to 110 nm. The depth of an amorphous layer was observed to depend on the implantation dose. Temperature and dose-dependent epitaxial regrowth starting from the amorphous-crystalline interface was observed at 575 °C. The damage and vacancy concentration distributions were correlated with the implanted nitrogen distribution in the case of the highest implantation dose at 1016 N atoms cm−2; disorder annealing and loss of nitrogen behave in a like manner with increasing temperature. For the lower doses, however, almost no redistribution or loss of nitrogen arose despite structural damage and vacancy annealing. Interpretation of the positron data allowed an identification of two types of vacancies. The type of the vacancy defects was found to depend on the implantation dose and annealing temperature; monovacancies were formed in the In sublattice at the low implantation doses, while the highest dose produced divacancies. The annealing tended to convert the monovacancies into divacancies, which were recovered at high temperatures depending on the implantation dose. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366746
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  • 2
    Electronic Resource
    Electronic Resource
    Diffusion of Au in ZnSe and its dependence on crystal quality (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 799-802 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of gold in zinc selenide has been studied by using a 12C and 4He ion backscattering technique. The samples were thin films grown by molecular beam epitaxy on bulk GaAs (100) substrates and on GaAs (100) epitaxial layers followed by evaporation of gold and annealing in the temperature range 400–800 °C. The surface properties of the samples were studied with scanning electron microscopy and atomic force microscopy. The crystal quality of the samples was studied with 4He ion channeling. The gold diffusion was found to depend significantly on the crystal quality of the ZnSe. An empirical model for calculating the diffusion coefficient for different crystal quality ZnSe is presented. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369162
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  • 3
    Electronic Resource
    Electronic Resource
    Hydrogen migration in diamond-like carbon films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3791-3796 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Properties of physical vapor deposited diamondlike carbon (DLC) films and the migration of hydrogen in H+ and 4He+ ion implanted and hydrogen co-deposited DLC films have been studied. Measurements utilizing Rutherford backscattering spectrometry showed that the films studied have an average mass density of 2.6±0.1 g/cm3. The bonding ratio sp3/sp2 is typically 70% measured with the electron spectroscopy for chemical analysis technique. Impurities and their depth distributions were deduced from the particle induced x-ray emission and secondary ion mass spectrometry (SIMS) measurements. Distributions of implanted and co-deposited hydrogen were measured by the nuclear resonance reaction 1H(15N,αγ)12C and SIMS. It was found that annealing behavior of implanted H in DLC has a diffusion like character. The obtained diffusion coefficients resulted in the activation energy of 2.0±0.1 eV. It was observed that in H co-deposited DLC films the temperature of H release varied between 950 and 1070 °C depending on the H concentration. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365741
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of hydrogen on chemical vapor deposition of tungsten on sputter-deposited TiN layers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2998-3000 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten (W) films are deposited on sputter-deposited TiN adhesion layers in a cold-wall chemical vapor deposition reactor, initiated with the deposition of a W nucleation layer by SiH4 reduction of WF6. H2 is also introduced in the reactor for some depositions. The electrical resistivity and mechanical stress of the W films are found to be dependent on the underlying TiN layers as well as on the presence of H2 during W nucleation layer deposition. A higher resistivity is obtained when the W is deposited on the TiN prepared at 250 °C than on the TiN prepared at 450 °C. For the W deposited on the low-temperature TiN, the resistivity is reduced by adding H2 to the reactants during W nucleation layer deposition; while for the W deposited on the high-temperature TiN, the resistivity is almost insensitive to the H2 addition. More oxygen and fluorine are found at the W–TiN interface for the W deposited on the low-temperature TiN than on the high-temperature TiN. Introduction of H2 to the reactants during W nucleation layer deposition reduces the concentrations of interfacial fluorine and oxygen, in agreement with thermodynamic predictions. A lower film stress is obtained for the W deposited on the high-temperature TiN layers and/or with H2 addition. The W films become less textured when H2 is introduced to the reactants during W nucleation layer deposition. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114931
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  • 5
    Electronic Resource
    Electronic Resource
    Coherent displacement of atoms during ion irradiation (1999)
    [s.l.] : Macmillan Magazines Ltd.
    Nature 398 (1999), S. 49-51 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Ion irradiation is a common technique of materials processing, as well as being relevant to the radiation damage incurred in nuclear reactors. Early models of the effects of ion irradiation typically assumed that particles undergo two-body elastic collisions, like billiard balls colliding in ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/17983
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  • 6
    Electronic Resource
    Electronic Resource
    Annealing behaviour of high-dose-implanted nitrogen in InP (1996)
    Springer
    Applied physics 62 (1996), S. 463-468 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 61.72.Vv; 61.72.Cc; 66.30.Jt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Concentration profiles of nitrogen in vacuum-annealed p- and n-type single-crystal (1 0 0) InP implanted with 1×1016 30 keV 15N+ ions cm-2 have been studied by Secondary Ion Mass Spectrometry (SIMS) and Nuclear Resonance Broadening (NRB) techniques. Damage induced by the nitrogen implantation was studied by Rutherford Backscattering Spectrometry (RBS) and channeling. Annealing the samples led to loss and redistribution of nitrogen in the temperature range from 575 to 675 °C. At temperatures from 575 to 600 °C, rapid migration of nitrogen towards the sample surface was observed. The n-type InP material had a very dominant tendency for surface nitrogen build-up, whereas the p-type material had a markedly smaller surface peak in the nitrogen distribution. The surface peak in n-type material is due to sulphur acting partly as a diffusion barrier. SIMS analyses showed sulphur build-up on the surface in the course of annealing. At temperatures from 600 to 675 °C, the nitrogen profiles of n- and p-type InP were similar. A small loss of nitrogen was observed at 625–675 °C. Two different recovery stages were observed at 575–600 °C and at 625–650 °C. The corresponding activation energies for nitrogen loss are 2.9 and 3.0 eV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050324
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  • 7
    Electronic Resource
    Electronic Resource
    Annealing behaviour of high-dose-implanted nitrogen in InP (1996)
    Springer
    Applied physics 62 (1996), S. 463-468 
    Details
    ISSN: 1432-0630
    Keywords: 61.72.Vv ; 61.72.Cc ; 66.30.Jt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Concentration profiles of nitrogen in vacuum-annealed p- and n-type single-crystal (1 0 0) InP implanted with 1 × 1016 30 keV15N+ ions cm−2 have been studied by Secondary Ion Mass Spectrometry (SIMS) and Nuclear Resonance Broadening (NRB) techniques. Damage induced by the nitrogen implantation was studied by Rutherford Backscattering Spectrometry (RBS) and channeling. Annealing the samples led to loss and redistribution of nitrogen in the temperature range from 575 to 675 °C. At temperatures from 575 to 600 °C, rapid migration of nitrogen towards the sample surface was observed. The n-type InP material had a very dominant tendency for surface nitrogen build-up, whereas the p-type material had a markedly smaller surface peak in the nitrogen distribution. The surface peak in n-type material is due to sulphur acting partly as a diffusion barrier. SIMS analyses showed sulphur build-up on the surface in the course of annealing. At temperatures from 600 to 675 °C, the nitrogen profiles of n- and p-type InP were similar. A small loss of nitrogen was observed at 625–675 °C. Two different recovery stages were observed at 575–600°C and at 625–650 °C. The corresponding activation energies for nitrogen loss are 2.9 and 3.0 eV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01567118
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