Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1995-1999  (3)
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4239-4247 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Unintentional Zn diffusion during metalorganic vapor phase epitaxy causes serious damages in semiconductor devices. In this work, profiles of unintentionally diffused Zn atoms from a p-InP layer to the adjoining InP substrate during growth of the p-InP layer are measured by secondary ion mass spectrometry. Zn diffusion profiles with a double diffusion front, which is composed of a shallow front with high Zn concentration and a deep front with low Zn concentration, are investigated as an approach to controlling unintentional diffusion. Diffusion depth of each front is controlled in proportion to Zn dosage, which is proposed as a value calculated as Zn concentration without regard to saturation limit. The diffusion depth for the growth time of 60 min increases in proportion to the Zn dosage as the slope of 0.16 μm/1018 cm−3 for the shallow front and that of 0.32 μm/1018 cm−3 for the deep front at a growth temperature of 600 °C. The deep front expands two times faster than the shallow front, which is normally observed as a p-n junction. Zn concentration at which unintentional Zn diffusion occurs is determined to be more than 2×1017 cm−3. Therefore, the penetration of Zn atoms into the active region of semiconductor devices should be observed when unintentional diffusion takes place. Furthermore, even at low Zn concentration, the introduction of a kick-out mechanism is proposed to explain the diffusion coefficient of the unintentional diffusion. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Springer
    International journal of clinical oncology 4 (1999), S. 107-111 
    ISSN: 1437-7772
    Keywords: Key words Giant cell tumor ; Rib
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Giant cell tumors of bone are a relatively common type of proliferative neoplasm. These tumors usually arise in the epiphyseal region of limbs and their occurrence in the ribs is unusual. This report describes two rare cases of giant cell tumor of the ribs. The tumors were resected with the ribs, and chest wall defects were covered with Marlex mesh. Both patients remained free of local recurrence. In one patient, however, multiple pulmonary metastases were detected on a computed tomography scan of the chest 14 months after surgery.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    ISSN: 1572-817X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract We have investigated the temperature dependencies of the slope efficiency and the threshold current for strained multiquantum well (MQW) lasers as a parameter of the well number. Smaller well numbers mean larger temperature dependencies of the slope efficiency and the threshold current, while larger well numbers mean larger internal loss and broadening of the photoluminescence linewidth of the MQW structure. Furthermore, the change in the slope efficiency with temperature change is related to the change in internal loss. In this work, the 1.3-μm strained MQW laser with a compressive strain of 1.0% and 7 wells shows the highest output power of 6.8 mW for an injection current of 50 mA and the lowest threshold current of 5.5 mA at 85°C, and the lowest variation in output power of 2.0 dB from 25–85°C at injection current of 50 mA.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...