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  • 1
    ISSN: 1432-0568
    Keywords: Key words Nuchal translucency ; Trisomy 16 ; Trisomy 21 ; Trisomy 18 ; Trisomy 13
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract  An increase in the nuchal translucency that can be detected at 10–14 weeks of gestation by ultrasound forms the basis for a screening test for chromosomal abnormality. Several mechanisms leading to this increase in skin thickness have been proposed, including changes of the extracellular matrix, cardiac defects and abnormalities of the large vessels. This study examines the composition of the extracellular matrix of the skin in gestational age-matched fetuses with trisomy 21, 18 and 13 from 12–18 weeks. Immunohistochemistry was applied with monoclonal and polyclonal antibodies against collagen type I, III, IV, V and VI and against laminin and fibronectin. Collagen type VI gene expression was further studied by in situ hybridization to detect differences in expression patterns of COL6A1, COL6A3 and COL1A1 between normal fetuses and those with trisomy 21. The ultrastructure of tissue samples was studied by transmission electron microscopy (TEM) and additionally by immunogold TEM. Further, we examined the morphology of the skin in an animal model for Down’s syndrome, the murine trisomy 16, by light and TEM. The dermis of trisomy 21 fetuses was richer in collagen type VI than that of normal fetuses and other trisomies, and COL6A1, located on chromosome 21, was expressed in a wider area than COL6A3, which is located on chromosome 2. Collagen type I was less abundant in the skin of trisomy 18 fetuses, while the skin of all three trisomies contained a dense network of collagen type III and V in comparison with normal fetuses. Collagen type IV, of which two genes are located on chromosome 13, was expressed in the basement membranes of the skin in all fetuses and additionally in the dermal fibroblasts only of trisomy 13 fetuses. Likewise, laminin was present in all basement membranes of normal and trisomic fetuses as well as in dermal fibroblasts of fetuses with trisomy 18. LAMA1 and LAMA3 genes are located on chromosome 18. Dermal cysts were found in the skin of trisomy 18 and 13, but not in trisomy 21 and normal fetuses. Ultrastructural findings showed that an extracellular precipitate containing glycosaminoglycans was regularly present in the skin of trisomy 21 fetuses and murine trisomy 16 embryos. In conclusion, this study suggests that the skin edema in fetal trisomies is characterized by specific alterations of the extracellular matrix that may be attributed to gene dosage effects as a result of a genetic imbalance due to the condition of fetal trisomy.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 653-656 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper reports on resistance and capacity measurements of ohmic contacts which were deposited on heteroepitaxially grown, Si-doped GaAs layers on Si substrates. It is observed that the process of rapid thermal annealing (RTA) considerably affects the ohmic properties of subsequently deposited contacts. With rising annealing temperature, the electrical resistivity in the GaAs layer and thus, the contact resistance increased essentially. Although the chemical concentration profile of Si dopants is not changed by RTA, the number of electrically active carriers is lowered. Photoluminescence measurements confirm that Si donors on Ga sites perform a site exchange to As vacancies, thereby forming Si acceptors. The extent of this exchange process is considerably enhanced by the presence of a high dislocation density in the heteroepitaxial GaAs films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5318-5324 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Radiative and compositional properties of spark-processed silicon are studied by photoluminescence and x-ray photoelectron spectroscopy measurements. Spark processing of silicon is performed in different atmospheres composed of nitrogen and oxygen. As a result of the process, room-temperature radiative transitions occur at 2.35 eV and vary in intensity over five orders of magnitude depending on the N2/O2 ratio. After processing in pure nitrogen or pure oxygen, however, the green photoluminescence (PL) is wiped out and weak blue (2.7 eV) or orange (1.9 eV) PL bands, respectively, are discernable. The temperature-dependent features of the 2.35 eV emission are characterized by an intensity increase in conjunction with a red shift of the peak position at lowered temperatures. A cross-sectional study reveals that the green PL is mainly generated in a near-surface layer having a chemical composition close to SiO2 and a nitrogen concentration below 1 at. %. Nearly no PL was observed from a deeper SiO2 layer enriched by silicon clusters and with an increased density of nitrogen (up to 7 at. %). The findings do not support a quantum-dot-related PL mechanism in spark-processed silicon. It is proposed that nitrogen additions reduce the density of nonradiative centers introduced by silicon dangling bonds. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2542-2544 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of spark-processed silicon was examined in a comparative study of optical micrographs utilizing ultraviolet laser light and electron beams for excitation. Whereas the photoluminescence (PL) was found to be dominantly generated in granular structures near the surface, the cathodoluminescence (CL) mainly propagates from holes which were created during the preparation process. PL and CL spectra are not identical in their spectral distributions. Low temperature luminescence measurements for both excitation modes reveal a high degree of local disorder. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have determined that the surface stoichiometry maintained during the first five monolayers of ZnSe epitaxial growth can have a significant influence on the stacking fault concentration in 2 μm thick epilayers. In particular, we have been able to minimize the stacking fault concentration to a level in the 104 cm−2 range (comparable to the stacking fault concentration in the ZnSe substrates used for epitaxy) by appropriate selection of a delay time (∼30 s for a substrate temperature of 300 °C) employed during an alternate element (Zn and Se) exposure phase of growth. The delay time in question is the time elapsed between closing the Se shutter and opening the Zn shutter. We show that the surface stoichiometry (Zn to Se atomic ratio) can be tailored during the delay phase since Se thermal desorption occurs at the growth temperature in a controlled fashion from an initially Se-terminated surface, and, it is postulated that selection of an optimum delay time corresponding to the attainment of a near-stoichiometric surface results in the growth of low stacking fault concentration material. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 347-349 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of growth of GaN/(0001) sapphire heteroepitaxial films have been examined in the relatively low substrate temperature range, 560–640 °C, using the reflection high energy electron diffraction (RHEED) specular reflection intensity monitoring technique. In particular, an alternate element exposure method of growth was employed in which Ga and N atoms were supplied separately (rather than simultaneously, as in conventional molecular beam epitaxy) to the substrate with the inclusion of a time delay between successive Ga flux and N flux exposures. We interpret the observed time dependent recovery of the RHEED specular reflection intensity during the time delay phases to be associated with Ga–N surface molecule migration on Ga-terminated surfaces and the activation energy for this migration process was determined to be 1.45±0.25 eV. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Cambridge : Cambridge University Press
    Journal of Germanic linguistics 10 (1998), S. 297-302 
    ISSN: 1470-5427
    Source: Cambridge Journals Digital Archives
    Topics: German, Dutch and Scandinavian Studies
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 51 (1995), S. 1999-2001 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 52 (1996), S. 315-317 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The structure of the title compound, [Rh(C4H7N2O2)2{CH(CH3)2}{P(C6H5)3}], consists of discrete complexes in which the Rh atom displays a distorted octahedral coordination. The two dimethylglyoximato ligands lie in the equatorial plane and the isopropyl and triphenylphosphine species occupy the axial positions. The Rh atom is displaced by 0.096 (1) Å from the mean plane through the four oxime N donor atoms towards the P atom. The average Rh—N distance is 1.975 (10) Å, while the axial Rh—P and Rh—C distances are 2.489 (2) and 2.146 (6) Å, respectively. Comparison of the results with those obtained previously for other compounds of this type indicates that the trans-influence of R in the axial fragment Ph3P—Rh—R is determined by its σ-donor power.
    Type of Medium: Electronic Resource
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