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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 617-619 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the exchange anisotropy of ferromagnetic Fe films grown on antiferromagnetic FeF2 single crystals. The behavior of the hysteresis loops of the Fe above and below the Néel temperature TN of FeF2 indicates a 90° rotation of the ferromagnetic easy axis due to the antiferromagnetic ordering. By examining the Fe hysteresis loops together with the FeF2 susceptibility behavior we infer that below TN the ferromagnetic and antiferromagnetic spins are coupled perpendicular to each other. This behavior can be explained by recent micromagnetic calculations on exchange bias systems, or by magnetoelastic effects. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1887-1891 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The exchange anisotropy of Ni80Fe20 (permalloy) films deposited onto bulk single crystal CoO substrates using molecular-beam epitaxy is strongly affected by the interface structure. Contrary to expectations for uncompensated interfaces, the loop shift increases for samples with greater interface disorder. The results are discussed in the light of proposed exchange anisotropy models. The results suggest that antiferromagnet domain dynamics are an important part of the exchange anisotropy mechanism. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1216-1216 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple, all permanent magnet, 2.45 GHz electron cyclotron resonance ion source has been developed for the production of stable beams of low charge state ions from gaseous feed materials. The source can produce ∼1 mA of low energy (3 kV) singly charged ion current in the 10−4 Torr pressure range. The source can also be operated in a more efficient low-pressure mode at an order of magnitude lower pressure. In this latter range, for example, the ionization efficiency of Ar is estimated to be 1% with charge states up to Ar8+ present. Operation in the low-pressure mode requires low power input (∼20 W). These features make the source especially suited for use with small accelerator systems for a number of applications including ion implantation, mass spectrometry, and atomic collision experiments where multiply charged ions are desirable. Design details and performance characteristics of the source are presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 1634-1637 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A simple, all permanent magnet, 2.45 GHz electron cyclotron resonance ion source has been developed for the production of stable beams of low charge state ions from gaseous feed materials. The source can produce ∼1 mA of low energy (3 kV) singly charged ion current in the 10−4 Torr pressure range. The source can also be operated in a more efficient low-pressure mode at an order of magnitude lower pressure. In this latter range, for example, the ionization efficiency of Ar is estimated to be 1% with charge states up to Ar8+ present. Operation in the low-pressure mode requires low power input (∼20 W). These features make the source especially suited for use with small accelerator systems for a number of applications including ion implantation, mass spectrometry, and atomic collision experiments where multiply charged ions are desirable. Design details and performance characteristics of the source are presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3186-3188 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large exchange bias effects (ΔE∼1.1 erg/cm2) were observed in antiferromagnetic (FeF2)–ferromagnetic (Fe) bilayers grown on MgO. The FeF2 grows along the spin-compensated (110) direction. The FeF2–Fe interface roughness was characterized using specular and diffuse x-ray diffraction and atomic force microscopy. The magnitude of the exchange bias field HE increases as the interface roughness decreases. These results imply that magnetic domain creation in the antiferromagnet plays an important role. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Chichester : Wiley-Blackwell
    Biological Mass Spectrometry 30 (1995), S. 296-304 
    ISSN: 1076-5174
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Physics
    Notes: Cluster ions from the continuous-flow fast atom bombardment of several pure, liquid aromatics were examined. Most of the aromatics cluster as (M)n+; however, aromatic bases such as pyridine and aniline also form (M)nH+ ions. The abundance of both (M)n+ and (M)nH+ cluster ions decreases rapidly as n increases. The semi-empirical molecular orbital PM3 method was used to examine energetics of cluster ion formation, binding energies of several aromatic dimer ions and structures of stable cluster ions observed in the desorption process.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
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