Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 680-682
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The determining factor for the accumulation of N at a Si/SiO2 interface during oxynitridation of the interface was investigated using a quantum-chemical method. Both mechanical and chemical factors (the interface strains and the heats of reaction of the oxynitridation) were considered. Though a slight relaxation of interface strain occurs when the interface has a certain type of oxygen-vacancy defect, we found the N incorporation does not relax the interface strain in most cases. The exothermicity and endothermicity of the oxynitridation reaction in the Si and SiO2 films, respectively, are the primary cause of the accumulation of N at the interface. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124480
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