Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
82 (1997), S. 3116-3119
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present photoluminescence studies on CdSxSe1−x semiconductor doped glasses with gap energies ranging from about 2 to 3 eV (400–600 nm). The investigations were performed by near-resonance as well as temperature-dependent resonance Raman spectroscopy. On the basis of the strongly resonant behavior of the deep trap photoluminescence with the excitonic states of the nanocrystallites, we have demonstrated that—besides the effect of photodarkening—inconsistencies in the experimental results of semiconductor doped glasses presented in literature, could be due to changes in the electronic resonance conditions when experimental parameters are changed. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.366555
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