Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Trends in precursor selection for MOCVD (1996)
    Weinheim : Wiley-Blackwell
    Chemical Vapor Deposition 2 (1996), S. 113-116 
    Details
    ISSN: 0948-1907
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Additional Material: 1 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/cvde.19960020306
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    MOCVD challenge, vol. 2: A survey of GaInAsP-GaAs for photonic and electronic device applications. By Manijeh Razeghi, IOP Publishing, Bristol, UK 1995, XVI, 443 pp., hardcover, $110.00, ISBN 0-7503-0309-3 (1996)
    Weinheim : Wiley-Blackwell
    Chemical Vapor Deposition 2 (1996), S. 117-117 
    Details
    ISSN: 0948-1907
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/cvde.19960020307
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    MOCVD Route to Chromium Carbonitride Thin Films Using Cr(NEt2)4 as Single-Source Precursor: Growth and MechanismWe gratefully acknowledge M. Nadal for hardness measurements and L. Dumitrescu for assistance in resistivity measurements. (1997)
    Weinheim : Wiley-Blackwell
    Chemical Vapor Deposition 3 (1997), S. 137-143 
    Details
    ISSN: 0948-1907
    Keywords: MOCVD ; Chromium carbonitride films ; Hard metallurgical coatings ; Single-source precursor ; Pyrolysis mechanism ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Chromium carbonitride coatings with a low nitrogen content were deposited by low pressure MOCVD in the temperature range 573-793 K using Cr(NEt2)4 as single-source precursor. As-deposited films are amorphous and crystallize upon annealing at 873 K to form an orthorhombic ternary phase. They exhibit a high hardness and their resistivity decreases by increasing the growth temperature. This dependence has been correlated to their microstructure. Quantitative 1H NMR analysis of the by-products of the MOCVD reaction has been performed. The quasi-equimolecular ratio of the by-products EtN=CHMe and HNEt2 suggests that most of the NEt2 ligands are removed by a stepwise mechanism, which is discussed.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/cvde.19970030305
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Low-temperature MOCVD of chromium carbonitride coatings from tetrakis(diethylamido)chromium and pyrolysis mechanism of this single-source precursor (1998)
    New York, NY [u.a.] : Wiley-Blackwell
    Applied Organometallic Chemistry 12 (1998), S. 189-199 
    Details
    ISSN: 0268-2605
    Keywords: single-source precursor ; tetrakis(diethylamido)chromium ; pyrolysis mechanism ; MOCVD ; low-temperature deposition ; chromium carbonitride thin films ; hard metallurgical coatings ; Chemistry ; Industrial Chemistry and Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: Amorphous chromium carbonitride coatings with a low nitrogen content (3-8 at%) were deposited by low-pressure MOCVD in the temperature range 573-793 K using Cr(NEt2)4 as single-source precursor. This poor nitrogen incorporation is in agreement with the trends predicted by thermochemical calculations. XPS data, resistivity measurements and annealing experiments suggest that the films grown at 573 K are contaminated by organic species due to incomplete elimination of the ligands. The films deposited at higher temperature crystallize upon annealing at 873 K to form an orthorhombic ternary chromium carbonitride phase. The major volatile by-products of the MOCVD reaction were analyzed by 1H and 13C NMR. Their amount and the quasi-equimolar EtN=CHMe/HNEt2 ratio suggest that most of the NEt2 ligands are removed by a stepwise mechanism which probably occurs with other diethylamido complexes of transition metals when they are used as single-source precursors in MOCVD. The incorporation of the metalloid elements in the film is discussed in comparison with recent literature data. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...