Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 1847-1849
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Silicon implanted with 2 MeV Er ions at 350 °C is studied by Rutherford backscattering and channeling spectroscopy. Angular scans through the 〈100〉, 〈111〉, and 〈110〉 axial channels were measured. The angular scan profiles of erbium, in particular flux peak in the 〈110〉 scan profile suggest that the implanted Er atoms are predominantly located in the middle of the 〈110〉 channel (the hexagonal interstitial site). Monte Carlo simulations have been performed for the assumed hexagonal interstitial location of Er atoms. They well reproduce the experimental data, giving additional evidence for the location of Er atoms in the middle of the 〈110〉 channel. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115423
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