ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Recently it has been shown that high-quality SiO2 films can be grown on (100) Si downstream of a radio-frequency rf He/O2 discharge using a two-step process: plasma oxidation followed by remote plasma-enhanced chemical-vapor deposition [T. Yasuda, Y. Ma, S. Habermehl, and G. Lucovksy, J. Vac. Sci. Technol. B 10, 1844 (1992)]. The plasma oxidation is examined. For such a discharge the spatial distribution of atomic oxygen, the species held to be the oxidant, is calculated and it is found to be quite uniform for pressures below 0.5 Torr, with He:O2 ratios of 10:1, and glass walls. The distribution is nonuniform for clean stainless-steel chamber walls. By emission spectroscopy the downstream extension of the discharge is found to be appreciable, and sensitive to rf power, gas pressure, and the location of ground electrodes. It is concluded that the role of ion bombardment in plasma oxidation by this process should be further investigated. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.358859
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