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  • 1995-1999  (5)
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  • 1
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In the radiometry laboratory of the Physikalisch-Technische Bundesanstalt at the Berlin electron storage ring BESSY a new instrumentation has been set up for the calibration of transfer detectors in the wavelength range from 35 to 400 nm with an aspired uncertainty of 〈1%. The spectral responsivity of a detector is determined by comparison with the known responsivity of an electrical substitution radiometer operated at liquid helium temperature as the primary detector standard. A first calibration of silicon photodiodes was performed in the spectral range above 250 nm. The spectral responsivity determined with 3% uncertainty was found to agree with previous calibrations conducted with lasers as sources. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2926-2939 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photon energy dependence of the mean energy W required to produce an electron-hole pair in silicon for photons with energies between 50 and 1500 eV was determined from the spectral responsivity of selected silicon photodiodes. The spectral responsivity was measured with a relative uncertainty of less than 0.3% using monochromatized synchrotron radiation whose radiant power was measured with a cryogenic electrical substitution radiometer. In order to deduce W from the spectral responsivity of photodiodes with a relative uncertainty of about 1%, a method for the calculation of photon and electron escape losses from silicon photodiodes was developed and the model for the charge carrier recombination losses was improved. In contrast to recent theoretical and experimental results, a constant value W=(3.66±0.03) eV was obtained in the photon energy range from 50 to 1500 eV. The present experimental results are confirmed by calculation of the pair creation energy in silicon from data from the literature for the relevant material properties. The difference from previous theoretical work is due to different assumptions about the influence of the band structure of silicon. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2974-2976 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports a measurement of the mean electron-hole pair creation energy in crystalline silicon using photons in the 50–1500 eV spectral range. A cryogenic electrical substitution radiometer in combination with monochromatized synchrotron radiation was used to determine the spectral responsivity of silicon photodiodes in this spectral range with a relative uncertainty of less than 0.3%. The mean electron-hole pair creation energy has been determined from these measurements and in contrast to recent theoretical and experimental results a constant value of (3.64±0.03) eV was obtained in accordance with a calculation presented here. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3662-3664 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Front-illuminated PtSi–n–Si Schottky barrier photodiodes have been developed for the ultraviolet and vacuum ultraviolet spectral range. Their spectral responsivity was determined in the 120–500 nm spectral range by use of a cryogenic electrical substitution radiometer operated with spectrally dispersed synchrotron radiation. For wavelengths below 250 nm, the spectral responsivity is about 0.03 A/W, comparable to that of GaAsP Schottky photodiodes. Unlike the GaAsP diodes, the new PtSi–n–Si diodes have a spatially uniform response which is virtually stable after prolonged exposure to short wavelength radiation. Even after a radiant exposure of 150 mJ cm−2 at wavelength 120 nm, the relative reduction in spectral responsivity remains below 0.2%. Due to these features, this type of photodiode is a promising candidate for use as secondary detector standard in the ultraviolet and vacuum ultraviolet spectral ranges. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 5 (1998), S. 780-782 
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: At the BESSY II storage ring, the Physikalisch–Technische Bundesanstalt (PTB) will operate insertion devices dedicated to radiometric use. One branch of the appendant beamline system will be equipped with a grazing-incidence monochromator, described here. The monochromator concept is based on a plane grating operated in parallel light; therefore exact focusing is maintained for all photon energies irrespective of the angular setting at the grating. The monochromator has been optimized for small higher-order transmittance and high power throughput, as required by radiometric applications in the wide photon energy range from 20 eV to 1900 eV.
    Type of Medium: Electronic Resource
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