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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 185-188 (Mar. 1995), p. 53-58 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 294-296 (Nov. 1998), p. 269-272 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 196-201 (Nov. 1995), p. 1881-1886 
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5987-5994 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dynamics of the interaction of electron-cyclotron-resonance (ECR) plasmas with the surface of GaAs substrates are studied by real-time optical reflection spectroscopy. Analysis with a three-phase ambient/overlayer/substrate model yields information on the time-dependent composition of the near-surface region, such as the thickness, degree of amorphization, and oxide and void fraction in the overlayer. Using this technique, it is observed that the thickness of the damaged layer formed by the impact of energetic ions increases linearly with the ion energy during argon ECR sputter etching. Furthermore, the dynamics of a cleaning process with a hydrogen ECR plasma have been studied. At temperatures between 300 and 500 °C this cleaning can be characterized by a two-step process. During the first few seconds of exposure, the oxide layer is removed; in the second step, the GaAs is etched gently, which leads to a surface region with little damage to the crystal. At lower temperatures, cleaning is not successful and a thick damaged overlayer is formed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3886-3888 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Several monolayers (ML) of CdSe were deposited on (001) GaAs surfaces to study the stability of the CdSe films. The CdSe film with the 2 ML thickness showed atomically flat surfaces just after the growth. However, in three days after the growth, self-organization into dots at room temperature was clearly observed. This unexpected self-organization of dots observed at room temperature from the once coherently-grown CdSe film will be closely correlated to the enhancement of the heterointerface diffusion observed in this combination of CdSe and GaAs. This correlation between the stability of the dots and the heterointerface diffusion was examined in the common cation case of ZnSe/ZnS, which is known to show low interface diffusion. Self-organization of ZnSe dots was observed with an atomic force microscope on (001) ZnS surfaces. The ZnSe dots were stable as expected and did not show instability such as observed for the CdSe dots on GaAs or on ZnSe. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2870-2872 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The cleaning of the GaAs (111)B surface with a hydrogen electron cyclotron resonance discharge plasma is investigated at temperatures between 200 and 500 °C and compared with the GaAs (100) surface. It is found that during the exposure the GaAs (111)B is etched in a non-Arrhenius way with a higher etch rate at low temperatures. For temperatures 300–500 °C, the surface is severely roughened after exposure, while the (100) surface remains smooth in all cases. The near-surface crystalline quality of GaAs (111)B remains higher than that of (100).
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2695-2697 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Self-field ac losses were measured by the conventional ac four-probe method in biaxially aligned Y–Ba–Cu–O tapes using polycrystalline Hastelloy tapes with textured yttria-stabilized-zirconia buffer layers. The ac losses increased in proportion to the fourth power of transport current in the high Jc sample, and agreed well with Norris' equation for thin strip conductors. However, the low Jc sample had rather higher losses than Norris' prediction, suggesting excessive magnetic flux penetration caused by percolated current paths. The results confirmed Norris' prediction of the low ac losses for thin strip conductors, and indicated the importance of removing percolated structures of current paths to avoid higher ac losses than the theoretical predictions based on uniform conductors. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1398-9995
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Background: To test the hypothesis that urinary levels of arachidonic acid metabolites may be a predicting factor of the effects of pranlukast, a selective leukotriene (LT) antagonist, on chronic adult asthma, we investigated the relationship between its clinical efficacy and urinary eicosanoid levels. Methods: An open, multicenter trial was conducted involving 38 stable moderate and severe asthmatic patients (mean percent predicted FEV1 was 71%). All patients received pranlukast (225 mg twice daily) for 4 weeks after a 2-week run-in period. Urinary levels of LTE4, 11-dehydro-thromboxane (TX) B2, 2,3- dinor-6-keto-prostaglandin (PG) F1α, and creatinine were measured in 3-h urine collected on day 1 of the treatment. The responder was defined by an improvement of asthma symptom scores and peak expiratory flow rate (PEFR). Results: One patient was excluded because of an adverse effect, nausea. Thirteen out of 37 subjects were responders and 24 were nonresponders. There were no significant differences in patients' backgrounds and urinary arachidonate levels between the two groups. The urinary LTE4 to 2,3-dinor-6-keto-PGF1α ratio in the responder was significantly lower (P=0.01) than that in the nonresponder. In all patients, a significant inverse correlation was revealed between the baseline urinary LTE4/2,3-dinor-6-keto-PGF1α ratio and the improvement of PEFR in the morning (r=−0.43, P=0.007). Conclusions: These data suggested that the urinary ratio of LTE4 to 2,3-dinor-6-keto-PGF1α might be one of the predictive markers of the clinical efficacy of this LT-receptor antagonist in asthmatic subjects.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford [u.a.] : International Union of Crystallography (IUCr)
    Acta crystallographica 55 (1999), S. 1284-1286 
    ISSN: 1600-5759
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Population ecology 41 (1999), S. 139-149 
    ISSN: 1437-5613
    Keywords: Key words Feedback management ; Cervus nippon ; Sustainable hunting ; Uncertainty ; Irruption ; Extinction risk
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract We consider here a management policy for a sika deer (Cervus nippon) population in the eastern part of Hokkaido. Deer populations are characterized by a large intrinsic rate of population increase, no significant density effects on population growth before population crash, and a relatively simple life history. Our goals of management for the deer population are (1) to avoid irruption with severe damage to agriculture and forestry, (2) to avoid the risk of extinction of the deer population, and (3) to maintain a sustainable yield of deer. To make a robust program on the basis of uncertain information about the deer population, we consider three levels of relative population size and four levels of hunting pressures. We also take into consideration a critical level for extinction, an optimal level, and an irruption level. The hunting pressure for females is set to increase with the population size. We also recommend catching males if the population size is between the critical and optimal levels and catching females and males if the population size is larger than the optimal level. We must avoid cases of irruption or threatened population under various sets of uncertain parameter values. The simulation results suggest that management based on sex-specific hunting is effective to diminish the annual variation in hunting yield.
    Type of Medium: Electronic Resource
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