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  • 1995-1999  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Langmuir 11 (1995), S. 186-190 
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 7338-7343 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The Si(100) and (111) surfaces have generally been classified as relatively inert toward molecular hydrogen adsorption. In the present work, we show using surface second harmonic generation that the sticking probability increases dramatically for slightly misoriented substrates, which are of interest in many integrated circuit applications. At temperatures lower than 30–50 K below where desorption becomes significant, defect sites serve as adsorption conduits from which hydrogen atoms diffuse onto the rest of the surface. The adsorption rate therefore has the activation energy of surface diffusion, found to be 0.78 eV on Si(100) and 1.50 eV on Si(111). The small energy barrier and pre-exponential factor (∼10−11 cm2/s) for diffusion on (100) seem to result from the need to break Si–Si dimer-pair bonds prior to hopping of an H atom. At higher temperatures, the adsorption mechanism changes, and H2 sticks to both surfaces with a fairly large probability near 0.1. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 2557-2565 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: For diffusion-controlled reactions in three dimensions, continuum mechanics provides a quantitative relation between the steady-state reaction rate constant k and the diffusion coefficient D. However, this approach fails in two dimensions, where no steady-state solution exists on an infinite domain. Using both Monte Carlo methods and analytical techniques, we show that previous attempts to circumvent this problem fail under real laboratory conditions, where fractional coverages often exceed 10−3. Instead, we have developed a rigorous and general relation between k and D for all coverages on a square lattice for the reaction A+A→A2. For short times or high coverages, the relation k=πD/γ holds exactly, where γ denotes the two-dimensional packing fraction. For lower coverages, however, k depends on time in both constant-coverage (adsorption allowed) and transient-coverage (adsorption forbidden) regimes. In both cases, k decreases in response to the evolution of nonrandom adsorbate configurations on the surface. These results indicate that diffusion-limited surface reactions may be identified unambiguously in the laboratory and also provide a quantitative link between diffusion parameters and experimentally determined recombination rate parameters. Practical experimental methods highlighting such effects are outlined. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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