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  • 1995-1999  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6265-6265 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of spin polarized tunneling in tunnel junctions in which one of the conducting layers is a half-metallic ferromagnet (HMF). HMF are unique in that the Fermi level of these materials intersect the majority spin electron band, while the minority band has an energy gap near the Fermi level. Hence, HMF simultaneously have both metallic and semiconducting characteristics, and theory predicts that the conduction electrons are 100% spin polarized. As a result, the magnetoresistance in magnetic multilayers or trilayer tunnel junctions is expected to be significantly higher than with conventional ferromagnetic materials. Two important parameters affecting the performance of these junctions are the smoothness of the HMF surface and its surface composition. Tunnel junctions consisting of a layer of NiMnSb, a barrier layer of Al2O3, and a layer of aluminum were prepared and studied for their tunneling properties. Surface analysis of HMF films was done using Auger depth profiling and AFM. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferromagnet-insulator-ferromagnet tunnel junctions with one NiMnSb electrode were studied to test the 100% conduction electron spin polarization predicted from band structure calculations performed on this compound. This phenomenon, known as half-metallic ferromagnetism (HMF), should result in significantly larger junction magnetoresistance (JMR) than in junctions using only conventional ferromagnetic materials such as Ni, Co, and Fe alloys which show JMR of up to 32%. Analysis by x-ray diffraction, Rutherford back scattering, SQUID, AFM, and STM confirm that the NiMnSb has the desired physical properties. A maximum JMR of 8.1% was observed in NiMnSb/Al2O3/Ni0.8Fe0.2 junctions at 77 K and 5.7% for NiMnSb/Al2O3/Co0.5Fe0.5. Maximum JMR for these two types of junctions at room temperature was 2.4% and 3.7%, respectively. The JMR observed is much lower than that expected for an HMF-I-FM junction. This could be due to scattering of the spins at the FM-I interfaces resulting from surface degradation of the NiMnSb, since the film growth requires deposition at elevated temperatures of 〉400 °C. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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