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  • 1995-1999  (10)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Band gap modification in Ne+-ion implanted In1−xGaxAs/InP and InAsyP1−y/InP quantum well structures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 765-770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band gap modification in Ne+-ion implanted In1−xGaxAs/InP (x=0.25, 0.33, 0.40, 0.47, 0.54, 0.61, 0.69) and InAsyP1−y/InP (y=0.32) quantum well structures has been studied by low temperature (12 K) photoluminescence spectra. The maximum usable high temperature anneal for inducing the compositional intermixing using an InP proximity cap is found to be ∼700 °C for 13 s. A second low-temperature (300 °C) anneal, following the high-temperature (700 °C) anneal, is found to induce greater band gap changes than the simple one-step anneal at 700 °C. The changes are found to be approximately proportional to the difference of bandgap energy between the well and the barrier materials; the proportionality coefficient increases with ion dose and reaches a maximum at a dose of ∼2×1013 cm−2. At higher doses, the proportionality coefficient decreases. The band gap changes are explained qualitatively based on the InGaAsP binary composition diagram. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364440
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  • 2
    Electronic Resource
    Electronic Resource
    Group V incorporation in InGaAsP grown on InP by gas source molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3021-3027 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of the group V components in In1−xGaxAsyP1−y, grown lattice matched to InP by gas source molecular beam epitaxy, has been studied over the entire alloy range, 0≤y≤1, as a function of the group V source composition, the V/III beam flux ratio, and the substrate surface orientation. Several aspects of the group V incorporation are most easily understood in terms of a simple model involving a constant incorporation coefficient and an As "underpressure'' condition. An improved description of the results at lower values of the V/III flux ratio is provided by a thermodynamic model based on equilibrium reactions for the formation of the binary constituents, and using the bulk properties of the solid solution. However, the thermodynamic model is quantitatively incorrect for large values of the V/III flux ratio. Furthermore, the results for different surface orientations reveal additional weaknesses in the thermodynamic model and suggest the need to account for the surface bonding configurations in describing the group V incorporation in epitaxial growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361241
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  • 3
    Electronic Resource
    Electronic Resource
    Hydrogen incorporation into Si-doped InP deposited by gas-source molecular beam epitaxy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3378-3381 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen incorporation into Si-doped InP grown by gas-source molecular beam epitaxy was studied. P-H sites were identified by infrared spectroscopy. Proton-implanted reference samples were used to quantify the infrared results. Approximately 0.1 at. % hydrogen was found to be incorporated into InP:Si. Hall measurements indicated that most of the Si atoms were electrically active as donors. Rapid thermal annealing at 600 °C removed most of the bonded hydrogen from the samples. However, this resulted in relatively little change in either the room-temperature free-carrier concentration or Hall mobility. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358626
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical properties of p-type InGaAsP and InGaAs irradiated with He+ and N+ (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5580-5583 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: He+ and N+ ion irradiation of epitaxial p-type In0.76Ga0.24As0.58P0.42 and In0.53Ga0.47As was performed at 300 K to obtain high-resistivity regions. In both the ternary and quaternary samples the resistivity first increases with ion dose. A maximum is reached at a critical dose depending on the ion species and initial doping concentration. Above this dose the conductivity converts to n type and the resistivity steadily decreases to ∼102 Ω cm in InGaAsP and ∼2 Ω cm in InGaAs. After thermal annealing the type converted samples revert to p type. However, for ion doses ≥1013 cm−2 the high resistivities remain stable up to 700 K. The results suggest that simple point defects, rather than complexes are responsible for the changes in the electrical properties of the samples. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359199
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  • 5
    Electronic Resource
    Electronic Resource
    Desorption of ultraviolet-ozone oxides from InP under phosphorus and arsenic overpressures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5167-5172 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal desorption of ultraviolet-ozone oxide on InP substrates prepared for molecular-beam epitaxy has been performed with overpressures of P2, As2, and As4. Surface analysis using reflection high-energy electron diffraction, Auger electron spectroscopy, and x-ray photoelectron spectroscopy and thermodynamic calculations indicate that thermal desorption proceeds via a reaction between the oxide and atomic phosphorus from the substrate to produce volatile phosphorus oxides such as P2O3. The overpressure species serves to stabilize the substrate against surface dissociation once the oxide is removed. In the case of an arsenic overpressure the desorption of the final monolayer of oxide is slowed, relative to the case of phosphorus overpressure, due to the formation of InAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359262
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  • 6
    Electronic Resource
    Electronic Resource
    Anisotropic interfacial strain in InP/InGaAs/InP quantum wells studied using degree of polarization of photoluminescence (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 3616-3620 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature, polarization-resolved photoluminescence from a (001) surface has been used to investigate InP/InGaAs/InP quantum wells grown by gas source molecular beam epitaxy. The degree of polarization of photoluminescence from a (001) surface, DOP001, is a direct measure of the anisotropy of polarization of luminescence between [110] and [11¯ 0] directions. DOP001 is observed to be strongly dependent on the quantum well thickness, composition (strain), and the gas switching time at the growth-interrupted interface. Results show that the anisotropy of polarization may be due to an effect of an anisotropic strain field that is associated with strained bonds at the interfaces of the quantum well. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365479
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  • 7
    Electronic Resource
    Electronic Resource
    InGaAs/InP quantum wires grown by gas source molecular beam epitaxy onto V-grooved InP substrates with (111)A facet sidewalls (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2358-2360 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs/InP layers have been grown under optimized conditions by gas source molecular beam epitaxy on (100) InP substrates patterned with V grooves having (111)A facet sidewalls. Transmission electron microscopy shows that InGaAs/InP quantum wires are obtained with well thickness variation as high as a factor of 6 and that all epilayers are defect-free. Lateral subband separations are estimated by a simple one-dimensional parabolic potential model with the thickness determined by transmission electron microscopy. Photoluminescence from the InGaAs quantum wires is resolved with a selective etching technique. The quantum wire emission has a significant red shift compared to the adjacent quantum wells on the groove sidewalls and the (100) surface region between grooves. The red shift results from both the increased well thickness and compositional change due to adatom diffusion from sidewalls. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114344
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  • 8
    Electronic Resource
    Electronic Resource
    Nonuniform carrier distribution in asymmetric multiple-quantum-well InGaAsP laser structures with different numbers of quantum wells (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 744-746 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for quantifying the degree to which the uneven carrier distribution affects the operation of multiple quantum well (MQW) lasers is developed by comparing the net gains of wells in mirror image asymmetric MQW structures. The uneven carrier distribution is found to affect the performance of devices with as few as two quantum wells and decreases the net gain for wells on the n side of a ten quantum well structure by more than a factor of two. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123110
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  • 9
    Electronic Resource
    Electronic Resource
    Band-gap blue shift by impurity-free vacancy diffusion in 1.5-μm-strained InGaAsP/InP multiple quantum-well laser structure (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3419-3421 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of defect-enhanced, impurity-free, quantum-well (QW)-barrier compositional intermixing caused by the SiO2 cap annealing at 750 °C of a 1.5-μm InGaAsP/InP multiple quantum-well (MQW) laser structure have been studied by photoluminescence (PL). A substantial band-gap blue shift, as much as 112 nm (∼66 meV), was found in the structure and the value of the shift can be controlled by the anneal time. The amount of the shift does not depend on the thickness of the SiO2 cap layer. Ridge-waveguide lasers were fabricated on the different areas of the wafer, with and without a SiO2 cap during a 60 s anneal. The lasing wavelength of the laser produced with the SiO2 cap has a 78 nm blue shift over that of the laser without the SiO2 cap. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118213
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  • 10
    Electronic Resource
    Electronic Resource
    He-plasma assisted epitaxy for highly resistive, optically fast InP-based materials (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 509-511 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InP and related quaternaries (InGaAsP) have been grown by conventional gas source molecular beam epitaxy while simultaneously exposing the growth surface to a He plasma stream generated by electron cyclotron resonance. For growth temperatures from 400 to 450 °C, the InP produced by this process displays greatly increased resistivity, as high as 105 Ω cm, compared to growth without plasma where resistivities are typically less than 1 Ω cm. An InGaAsP quaternary, with band-gap wavelength of 1.55 μm, grown with the plasma displays a sharp band edge and fast photoresponse (15 ps). © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117769
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