Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
83 (1998), S. 3898-3905
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Charge buildup in thermally grown SiO2 thin films due to Fowler–Nordheim tunneling has been investigated. Both positive and negative oxide charge can be generated by the tunneling current. The stress fluence, voltage amplitude, and polarity dependence of the positive charge generation points to impact ionization occurring near the oxide substrate interface as the most likely source of this charge. The centroid location and density of the negative oxide charge are used to analyze the negative charge generation process at different stress voltage levels and temperature. A theoretical model is proposed and compared with the experimental data. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.366624
Permalink
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |