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  • 1995-1999  (9)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4773-4776 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of femtosecond time-resolved one- and two-photon-excited photoluminescence of bulk ZnSe enable us to distinguish the surface and bulk contributions to recombination dynamics. A photoluminescence lifetime of several nanoseconds or longer is measured for the bulk. A fast relaxation component with a decay time constant τT of a few tens of picoseconds observed in one-photon-pumped time-resolved spectra is identified as the result of diffusion and rapid surface recombination. A one-dimensional model taking into account surface nonradiative recombination and carrier diffusion is able to describe the observed behavior. The temperature dependence of τT shows good agreement with the theory. At room temperature, a surface recombination velocity S=5.8×105 cm s−1 and a diffusion constant D=10 cm2 s−1 are found using this model. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1915-1917 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnS1−xTex (0≤x≤1) single-crystal alloy films were grown on GaAs and Si substrates by molecular beam epitaxy. Strong photoluminescence in the yellow to blue light region, with room-temperature external quantum efficiencies of 2%–4% at an unoptimized excitation wavelength of 365 nm, was observed. The enhancement of luminescence was attributed to the presence of Te isoelectronic hole traps in the films. Strong bowing of the band-gap energy as a function of composition x was also observed, with the minimum near x=0.7. The line width as well as the Stokes shift of the luminescence peak from the band edge were found to increase as Te composition decreases. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3140-3142 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The light emitting properties of ZnS/ZnSe and ZnSTe/ZnSe strained II–VI superlattices are investigated. Room-temperature stimulated emission by photopumping in the deep-blue spectral region is observed. An upper limit of threshold carrier density required to achieve lasing is estimated to be 3×1018/cm3.The peak of stimulated emission is several tens of meV red shifted from the spontaneous emission peak, suggesting that exciton-exciton scattering is involved in the stimulated emission process. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1817-1819 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The wavelength dependence of the third-order nonlinear optical susceptibilities, χ(3), of the Au:TiO2 composite films with Au concentration varying from 15% to 60% (volume fraction), was measured by a degenerate four-wave mixing (DFWM) technique using a probe laser with a pulse width of 200 fs. It was found that, with the wavelength of the probe laser close to the surface plasmon resonance (∼680 nm), both the χ(3) and the figure of merit, χ(3)/α (α is optical absorption coefficient) were significantly enhanced. The maximum value of the χ(3) was 6×10−7 esu and occurred at an Au concentration of about 38%. Femtosecond time-resolved DFWM measurements revealed that the response time of the optical nonlinearity in the Au:TiO2 films is extremely fast. The time-resolved DFWM results suggest that the main physical mechanism involved in the optical nonlinearity in Au:TiO2 films on the femtoseconds time scale is the interband electric–dipole transition, and the hot electron excitation only partially contributes to the χ(3) on the femtosecond time scale and it becomes dominant only in the picosecond region. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3663-3665 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved reflectance difference spectroscopy (TRDS) has been applied to study the dynamics and relaxation processes of the 2.7 eV ZnSe/GaAs interface state associated with Zn–As bonds. The instantaneous screening due to the photoexcited carriers and ∼18 ps recovery time of the 2.7 eV interface state is observed in the TRDS spectra. The rapid cooling of the hot carrier in the spectral region above the ZnSe band edge is also observed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 16-18 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The frequency response and quantum efficiency (QE) of silicon-on-insulator (SOI) metal-semiconductor-metal photodetectors in the near-infrared (∼800 nm) are greatly enhanced with a simple reactive ion etching to form electrodes inside the interdigitated trenches. Detectors with 1.25 μm trench spacing were fabricated on a SOI substrate with a 6-μm-thick silicon top layer. The unique device structure isolates carriers generated deep inside the semiconductor substrate and at the same time provides a highly uniform electric field throughout the active region of the detector, resulting in an instrumentation limited response time of 23 ps at 5 V bias and a −3 dB bandwidth of 2.3 GHz as measured at 790 nm. The dc responsivity is 0.12 A/W, corresponding to an external QE of 18.7% and an internal QE of 88.5%. The large bandwidth and good responsivity at the wavelength of interest, combined with their low operating voltages, make these detectors attractive for use in short-distance optical communication systems. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2251-2253 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSTe-based Schottky barrier photovoltaic detector arrays were fabricated on GaP(100) using a two-step molecular beam epitaxy growth approach. These detectors exhibit visible blind and ultraviolet (UV) sensitive response with a peak UV responsivity of 0.13 A/W and 1.2×106 V/W at 320 nm. The built-in potential of these detectors was determined to be 1.7 V. The temporal photocurrent response of a 400×400 μm2 detector was measured to be 1.2 ns, limited apparently by the resistance-capacitance (rc) constant of the detector structure. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3321-3323 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the measurement of third-order optical nonlinearity (χ(3)) of ZnO microcrystallite thin films near the excitonic resonance at various temperatures using the femtosecond degenerate four-wave-mixing technique. The measured χ(3) response times are 270, 240, and 160 fs at 4.2 K, 77 K, and room temperature, respectively. The values of χ(3) range from 10−7 to 10−4 esu. The maximum values of χ(3) always correspond to the absorption peaks at different temperatures. Room-temperature excitonic enhancement of χ(3) is also observed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    European journal of pediatrics 157 (1998), S. 1023-1025 
    ISSN: 1432-1076
    Keywords: Key words Monozygotic twins ; Congenital tracheobronchial stenosis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Conclusion This case report shows that tracheobronchial stenosis may present in monozygotic twins. The pattern of malformation in twins differs from cases described previously.
    Type of Medium: Electronic Resource
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