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  • 1
    Electronic Resource
    Electronic Resource
    OPTICAL STUDIES OF SINGLE MOLECULES AT ROOM TEMPERATURE (1998)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Physical Chemistry 49 (1998), S. 441-480 
    Details
    ISSN: 0066-426X
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Chemistry and Pharmacology , Physics
    Notes: Abstract Recent developments in optical studies of single molecules at room temperature are reviewed, with an emphasis on the underlying principles and the potential of single-molecule experiments. Examples of single-molecule studies are given, including photophysics and photochemistry pertinent to single-molecule measurements, spectral fluctuations, Raman spectroscopy, diffusional motions, conformational dynamics, fluorescence resonant energy transfer, exciton dynamics, and enzymatic turnovers. These studies illustrate the information obtainable with the single-molecule approach that is hidden in ensemble-averaged measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.physchem.49.1.441
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  • 2
    Electronic Resource
    Electronic Resource
    Infrared Free Induction Decay of Liquid Water Molecules (1995)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 99 (1995), S. 1840-1842 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j100007a009
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  • 3
    Electronic Resource
    Electronic Resource
    Single-molecule spectral fluctuations at room temperature (1997)
    [s.l.] : Nature Publishing Group
    Nature 385 (1997), S. 143-146 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] FIG. 1 a, Emission spectra of a single sulphorhodamine 101 molecule taken sequentially with 170-ms data collection times before the final photobleaching. Significant spectral shifts are evident, b, Trajectory of the spectral mean (in wavenumbers) of the molecule; n is the index number of the ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/385143a0
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  • 4
    Electronic Resource
    Electronic Resource
    Dynamics of photoexcited carriers in AlxGa1−xN/GaN double heterostructures (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3158-3160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results of a time-resolved photoluminescence study of the dynamics of photoexcited carriers in AlxGa1−xN/GaN double heterostructures (DHs). The carrier dynamics including generation, diffusion, spontaneous recombination, and nonradiative relaxation were studied by examining the time decay of photoluminescence associated with the spontaneous recombination from the samples. The temporal evolution of the luminescence from the GaN active layers of the DH samples was found to be governed by a carrier–diffusion dominated capture process. The determination of the capture time for the carriers drift and diffusion into the GaN active region, in addition to the effective lifetimes of the spontaneous recombination for carriers in the AlGaN cladding layers and the GaN active region, allows an estimation of the diffusion constants for the minority carriers in the AlxGa1−xN cladding layers of the DHs. Our results yield a diffusion constant of 2.6 cm2/s for Al0.03Ga0.97N and 1.5 cm2/s for Al0.1Ga0.9N at 10 K. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366101
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  • 5
    Electronic Resource
    Electronic Resource
    Growth and photorefractive properties of Mn-doped (KNa)0.1(Sr0.6Ba0.4)0.9Nb2O6 crystals (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8835-8837 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: (KNa)0.1(Sr0.6Ba0.4)0.9Nb2O6, or KNSBN, crystals have been grown with two different Mn concentrations: 0.02 wt % and 0.04 wt %. Two-wave mixing and self-pumped phase conjugation experiments were carried out on these crystals at 632.8 nm wavelength. The measured two-wave coupling gains for the 0.02 wt % and 0.04 wt % crystals are larger than 7 cm−1 and 9 cm−1, respectively, and the two-wave coupling time response is faster for the 0.4 wt % crystal. In addition, the self-pumped phase conjugation reflectivity of the 0.04 wt % crystal is measured to be as high as 70%. It is shown that the Mn dopant can increase effectively the absorption coefficient and enhance the photorefractive properties of KNSBN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362561
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  • 6
    Electronic Resource
    Electronic Resource
    Optical transition in SiGe self-organized dots (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 446-448 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is found that the SiGe alloy self-organizers into uniform quantum dots embedded in the Si layer during the growth of a strained Si/Ge short period superlattice on a Si(001) substrate at a temperature of 800 °C by molecular beam epitaxy. The peak of photoluminescence from the quantum dots is at an energy higher than the band gap of Si. The intensity is two orders of magnitude higher than that of SiGe/Si quantum well. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118177
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  • 7
    Electronic Resource
    Electronic Resource
    Intrinsic exciton transitions in GaN (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 455-461 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Intrinsic excitonic transitions in GaN have been studied using a variety of spectroscopic measurements. Sharp spectral structures associated with intrinsic free excitons could be observed in photoluminescence, reflection, and absorption spectra. The energy positions of excitonic transitions in GaN epitaxial layers were found to be influenced by the residual strain resulting from lattice-parameter and thermal-expansion mismatches between the epilayers and the substrates. The values of the four principal deformation potentials of wurtzite GaN were derived by using the strain tensor components determined by x-ray measurements. The observation of spectral features involving the emission of LO phonons in absorption and photoluminescence excitation spectra at energies above exciton resonances indicate that a phonon-assisted indirect excitation process, which simultaneously generates a free exciton and a LO phonon, is a very significant and efficient process in GaN. The lifetime of the free excitons is found to be longer than the relaxation time of LO-phonon emission but much shorter than that of acoustic-phonon emission. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366660
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  • 8
    Electronic Resource
    Electronic Resource
    Luminescence study of band gap conversion in the SiGe material (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1555-1557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a photoluminescence study of SiGe quantum dots formed by one, two, and five periods of Si[8 monolayer (ML)]/Ge(4 ML) superlattices. The peak of photoluminescence from one Ge layer is at 0.95 eV, but the one from two and five periods of superlattices jump to about 1.2 eV. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119964
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  • 9
    Electronic Resource
    Electronic Resource
    Time-resolved exciton luminescence in GaN grown by metalorganic chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2512-2514 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of time-resolved studies on the exciton radiative decay in single-crystal GaN films grown by metalorganic chemical vapor deposition. Time-resolved photoluminescence (PL) measurements were performed on the samples at various temperatures from 10 to 320 K. The well-resolved near-band-edge luminescence features associated with free excitons and bound excitons in the GaN allow us to unambiguously determine their decay times. We found that the nonradiative recombination processes play an important role and dominate the decay of exciton population. The processes depend on the density of defects and impurities in the GaN samples. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114442
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  • 10
    Electronic Resource
    Electronic Resource
    Transport mechanisms in infinite layer phase compounds grown by molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1671-1673 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of infinite layer compounds were prepared by molecular beam epitaxy. Defect layers were incorporated into the structure in order to dope the infinite layer phase. Hole type doping is usually observed. Resistivity measurements show that the conduction mechanisms change gradually with increasing doping level, from activational type to variable range hopping (or a mechanism governed by the Coulomb interaction between localized electrons) and then further to a mechanism related to weak localization which can be described by Δρ=T−S, where the exponent S ranges from 0.5 to 1.5. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115052
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