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  • 1995-1999  (6)
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  • 1
    Electronic Resource
    Electronic Resource
    Use of the DX center as a probe to study the profile of Si impurities in planar-doped GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3283-3287 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photo Hall concentration and mobility were measured for two molecular beam epitaxy-grown samples having a silicon planar-doped structure in the GaAs layer of a GaAs/AlGaAs heterojunction. The nominal silicon concentration for both samples was 1.5×1013 cm−2 and the distance between the ideal localization of the doped plane and the interface was adjusted to be 15 A(ring). The difference between the two samples is the growth direction. The Hall measurements were carried out at 77 K both in darkness and under illumination using an infrared light emitting diode as light source. Photoexcited effects indicate the presence of silicon atoms inside the undoped AlGaAs layer and that the silicon profile spreads mainly in the growth direction. Self-consistent electronic structure calculations, in the effective-mass approximations, were performed assuming doping profiles that simulate both samples. The calculations show that parallel conduction occurs when the growth direction is from GaAs to AlGaAs. This is consistent with the Hall measurements. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358682
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Photoconductivity and n- to p-type transition in silicon planar-doped GaAs structures with a doped cap layer (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2659-2665 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoconductivity, photo-Hall free carrier concentrations and mobilities were measured on molecular beam epitaxy-grown silicon planar-doped GaAs samples, with silicon concentrations between 1.4×1012 and 8.8×1013 cm−2, as functions of temperature. In all samples, the planar-doped region is placed 0.2 μm below a n+-doped cap layer at the surface. We perform a systematic investigation of the persistent as well as nonpersistent photoconductivity effects which are present in all samples. A phenomenological analysis shows the presence of two distinct conduction channels, one with n characteristics and the other with p characteristics. These channels can present either bulk or two-dimensional characteristics, depending on the light intensity and on the temperature. A model based on spatial separation between electrons and holes is proposed to account for the persistence of the photoconductivity effect. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360127
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Thermally stimulated current spectroscopy on silicon planar-doped GaAs samples (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3764-3769 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using thermally stimulated current (TSC) spectroscopy we have identified the presence of several deep traps in low temperature grown (LTG) nonintentionally doped bulk molecular beam epitaxy (MBE)-GaAs and silicon planar-doped MBE-GaAs samples. The experiments of TSC spectroscopy were carried out on a LTG MBE-GaAs epilayer grown at 300 °C and the planar-doped layer with a nominal silicon concentration of 3.4×1012 cm−2. The LTG nonintentionally doped bulk MBE-GaAs sample shows three peaks in the TSC spectra but the planar-doped MBE-GaAs sample shows spectra similar to those of bulk samples grown by the liquid-encapsulated Czochralski and vertical gradient freeze methods. The main achievement is the experimental evidence that the potential well present in the planar-doped sample is effective in detecting the presence of different deep traps previously not seen in LTG bulk MBE-GaAs epilayers due to a shorter carrier lifetime (about 10−12 s) in the conduction band which occurs due to EL2-like deep traps recombination. This fact is evidenced by a strong hopping conduction in LTG bulk MBE-GaAs samples at temperatures lower than 300 K, but not in planar-doped MBE-GaAs samples because the two-dimensional electron gas has a higher mobility than lateral LTG bulk MBE-GaAs epilayers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368588
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  • 4
    Electronic Resource
    Electronic Resource
    The EL2-like metastable defect and the n- to p-type transition in silicon planar-doped GaAs (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3346-3350 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Through photo-Hall measurements at temperatures below about 120 K, we have observed the presence of a deep donor defect, with characteristics similar to those of the EL2 center, in planar-doped GaAs samples grown by molecular beam epitaxy at 300 °C. We have shown that this EL2-like center can account for the remarkable photoreleasing of electrons and holes into the conduction and valence bands, respectively. The two different kinds of carriers accumulate in two spatially separated channels, which can secondarily account for the n- to p-type transition we have observed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365645
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  • 5
    Electronic Resource
    Electronic Resource
    Self-induced persistent photoconductivity in resonant tunneling devices (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1125-1127 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the observation of a novel effect in resonant tunneling devices (RTD): a self-induced persistent photoconductivity (SIPPC). The SIPPC manifests itself as a permanent shift of the resonant peak position to lower voltages, which is induced by the RTD itself and not by external sources. The SIPPC is due to the presence of DX centers in the device, which are ionized by light generated in the device itself through the recombination of electron-hole pairs created by impact ionization of hot electrons in the depletion layer of the device. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117079
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  • 6
    Electronic Resource
    Electronic Resource
    Effect of Te as a surfactant on the optical properties of InAs self-assembled quantum dots (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 521-523 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on optical experiments in self-assembled InAs quantum dots grown on (100) and (311)A GaAs surfaces which were precovered with Te. We observe a strong reduction of the luminescence intensity with increasing Te coverage in the (100)-oriented samples. The Te-induced luminescence reduction is, however, much smaller in the (311)A oriented samples. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119597
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    Paper (German National Licenses)
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