Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
67 (1990), S. 1389-1392
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Deep levels in Ga-doped ZnSe films grown by molecular-beam epitaxy have been investigated through deep-level transient spectroscopy. Au/Ga-doped ZnSe Schottky diodes have two well-defined electron traps with activation energies of 0.26 eV (trap A), and 0.40–0.56 eV (trap B). The activation energy of trap B depends on the free-carrier concentration. The trap concentration in trap A and B is linearly proportional to the free-carrier concentration. The trap concentration, normalized by the free-carrier concentration, increases as the VI/II (Se/Zn) ratio increases. From these observations, we conclude that traps A and B can be ascribed to the complex of either the Zn vacancy and Ga or the interstitial Se and Ga.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.345694
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