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  • Electronic Resource  (3)
  • 1990-1994  (3)
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  • Electronic Resource  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3766-3768 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films were deposited on Pyrex glass substrates from Ti and TiO2 targets at room temperature by laser evaporation technique. These films were characterized by scanning electron microscopy, Auger electron spectroscopy, and depth profile analysis. The films deposited from Ti target are TiCx and TiOy matrix, while films from TiO2 target are almost stoichiometric in oxygen. The films have a smooth surface morphology under a laser power density of 5 × 106 W/cm2, which is close to the critical intensity for evaporation. The interface reaction of these films is strong, and the Ti atoms diffuse into the substrate.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1879-1881 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conducting and transparent thin films of tin oxide were prepared by the laser evaporation of an undoped powder-pressed polycrystalline tin oxide target onto unheated substrates. After characterizing these films, the results reveal that the films are highly oriented and with a grain size ∼0.2 μm. The nearly stoichiometric deposition of tin oxide films with deposition rates exceeding 24 A(ring) per pulse was obtained by this method. The lowest resistivity obtained is 3.0×10−3 Ω cm. The visible transmittance (between 4000 and 7000 A(ring)) is above 75%.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 58 (1994), S. 459-465 
    ISSN: 1432-0630
    Keywords: 78.60. Kn ; 61.70.−r
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract ZrO2 pellets doped by ZnO after 302 nm UV irradiation have been studied for ThermoLuminescent (TL) glow. The TL peak at 90°C for the 1100°C sintered ZrO2 pellet shifted to 85°C with intensity increased three times for the 1% ZnO doped ZrO2 sintered at 1100°C. The peak intensity at 210°C for the doped one is only one tenth of the undoped one. The emission spectra of thermoluminescence for undoped and ZnO-doped ZrO2 revealed that the effect of ZnO doping is to increase the number of luminescent centers. The trapping center associated to the 90°C TL peak is explained by the similar model as that of Kirsh et al. For the case of 210°C TL peak, we have proposed two different models of trapping centers; one is the Zr4+ in an asymmetrical oxygen arrangement, and the other is the defect complex formed from an oxygen vacancy and an anion.
    Type of Medium: Electronic Resource
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