Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1990-1994  (45)
  • 1985-1989  (36)
Source
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Atomic structure of Si/TbSi2/(111)Si double-heterostructure interfaces (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5744-5747 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution transmission electron microscopy (HRTEM) has been applied to study the atomic structure of the Si/TbSi2/(111)Si double-heterostructure interfaces. The unrelaxed geometrical models of Si/TbSi2/(111)Si interfaces can be systematically deduced from the dichromatic constrained-coincidence-site-lattice patterns. The atomic structures were determined by comparing HRTEM images with computer-simulated images. The relationships of interface bonding and structures of epitaxial Si/TbSi2 and epitaxial TbSi2/Si interfaces are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358411
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Dislocation generation mechanisms of InxGa1−xAs (0≤x≤1) epilayers grown on (100) InP substrates by molecular beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1511-1516 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The mechanisms of strain relaxation and dislocation generation for the 2-μm-thick InxGa1−xAs epilayers grown on (100) InP substrates with 0≤x≤1 were investigated. It was found that the growth mode and dislocation density of the InxGa1−xAs epilayers are not only dependent on the lattice mismatch with respect to InP substrates, but the abundance of Ga atoms and the degree of cation disorder in the alloy composition also play important roles. In the negative mismatched range even with a medium lattice mismatch (e.g., ε=−1.1%), InGaAs alloys with a high degree of cation disorder and containing more Ga atoms (x=0.32–0.37) trigger island growth and introduce high-density V-shaped dislocations. In the positive mismatched range, island growth occurs at x≈0.82 (ε=2%) and few V-shaped dislocations are generated. The difference between these two ranges is due to their different Ga concentrations which introduce different island nucleation centers in the initial growth stage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356386
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    The dependence of room-temperature oxidation of silicon catalyzed by Cu3Si on the silicide grain size (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2730-2732 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of room-temperature oxidation of silicon catalyzed by Cu3Si on the silicide grain size has been investigated by transmission electron microscopy and x-ray diffractometry. The thickness of the SiO2 layer was found to decrease with the average grain size of the starting Cu3Si layer. High-resolution transmission electron microscopy revealed that oxidation is initiated at the grain boundaries. Oxide film as thick as 4.5 μm, compared to a previous record of about 2 μm, was grown at room temperature over a period of two weeks in (001) samples. The growth of thick oxide films was achieved by minimizing the grain size of Cu3Si through a reaction between Cu and an intermediate amorphous silicon layer at 200 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356208
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Interfacial reactions in ultrahigh vacuum deposited Y-Si multilayer thin films (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2007-2014 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions of ultrahigh vacuum deposited Y-Si multilayer thin films have been studied by both conventional and high-resolution transmission electron microscopy, Auger electron spectroscopy, and x-ray diffraction. An amorphous Y-Si intermixing layer with a composition approximately equal to YSi2 was found to form in multilayer films with a composition ratio of 1Y:2Si at room temperature. Homogenization in atomic composition in the amorphous phase proceeded in samples annealed at 250–350 °C. In samples annealed at 400 °C for 30 min, the amorphous layer was completely transformed to crystalline YSi2. The formation of crystalline Y5Si3 and YSi was detected in as-deposited samples with concentration ratios 1Y:1Si and 5Y:3Si as well as in samples prepared with excess Y. Y5Si3 was the only silicide phase present in 5Y:3Si films after 400 °C annealing. The results indicated that the phase formation and stability in Y-Si multilayers depend critically on the composition. Based on the prediction of a growth control model, it was concluded that the formation of amorphous layer at room temperature is controlled by nucleation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356300
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Nanometer thick Si/SiGe strained-layer superlattices grown by an ultrahigh vacuum/chemical vapor deposition technique (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3441-3445 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High quality Si/Si1−xGex superlattices having layers as thin as 1.5 nm have been grown by an ultrahigh vacuum/chemical vapor deposition system. High-resolution double-crystal x-ray diffraction, and conventional and high-resolution cross-sectional transmission electron microscopy were used to evaluate the crystalline quality of these superlattices. A dynamical x-ray simulation program was employed to analyze the experimental rocking curves. Excellent matches between experimental rocking curves and simulated ones were obtained for all superlattices with various periodicity. A cross-sectional transmission electron micrograph of an 80 period Si(4.2 nm)/Si0.878Ge0.122 (1.5 nm) superlattice, in which each individual layers was clearly resolved, demonstrated the capability of this growth technique for nanometer thick layer deposition.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356104
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Investigation of the oxidation kinetics of CoSi2 on (111)Si by transmission electron microscopy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 865-870 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy has been applied to study oxidation kinetics of CoSi2 on silicon for both dry and wet oxidation. Care was taken to determine the activation energies of oxidation in the temperature and time regime where the islanding of CoSi2 does not occur. For dry oxidation, activation energies for parabolic and linear growth were found to be 1.91 and 2.01 eV (±0.1 eV), respectively. For wet oxidation, activation energies for parabolic and linear growth were found to be 1.75 and 1.68 eV (±0.1 eV), respectively. The activation energy of the parabolic rate constant is substantially different from those obtained previously. The difference is attributed to the occurrence of islanding during oxidation in the previous study. A comparison of oxidation kinetics of CoSi2, NiSi2, TiSi2 on silicon with pure silicon substrates indicated that the oxidation kinetics are practically the same for CoSi2 and NiSi2 in the parabolic growth regime, but substantially different from those of TiSi2 on silicon and pure silicon. The similarity in oxidation kinetics of cubic CaF2 structure CoSi2 and NiSi2 on silicon with small mismatches to silicon is correlated to essentially the same stress level in these two silicides during the oxidation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358462
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Transmission electron microscope study of the crystal structures and microstructures of ZrSi and HfSi in ultrahigh vacuum deposited metal thin films on (111)Si (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 278-284 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both conventional and high resolution transmission electron microscopy have been applied to study the crystal structures and microstructures of ZrSi and HfSi formed in the interfacial reactions of metal thin films on (111)Si. Both CrB and FeB type monosilicides were observed to form. The theoretically predicted and measured values of lattice parameters were found to be very close. A number of planar defects were detected to be present in ZrSi and HfSi. The textured growth of both monosilicides is explained in terms of preferential growth of these silicides along specific directions of silicon substrates which can be derived from the crystal structures and matching of atomic structures between silicides and silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357141
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Formation of polycrystalline silicon grains in Si+-preamorphized, BF+2-implanted (111)Si (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3631-3635 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The regrowth of Si+-preamorphized and BF+2- implanted thin films on (111)Si has been studied by both plan-view and cross-sectional transmission electron microscopy. Polycrystalline Si grains were found to form in Si+-preamorphized and BF+2- implanted (111)Si with the original amorphous-crystalline (a-c) interface located deeper in the preamorphized Si substrate than in BF+2- implanted samples. Rapid thermal annealing was performed to obtain kinetic data for the formation of polycrystalline Si grains. The nucleation and growth of polycrystalline Si grains were found to occur in the amorphous phase ahead of the growing a-c interface. The incubation time for the formation of 4 nm or larger crystallites in amorphous Si at 700 °C was found to be less than 30 s. The results are discussed in terms of the competition between the propagation of the a-c interface to sweep over the potential nucleation sites and random nucleation in the amorphous phase. Ramifications of the formation of polycrystalline Si grains in instances with a relatively low ion dosage and/or moderate annealing temperature are addressed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342611
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Effects of backsputtering and amorphous silicon capping layer on the formation of TiSi2 in sputtered Ti films on (001)Si by rapid thermal annealing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 2778-2782 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of backsputtering and amorphous silicon capping layer on the formation of TiSi2 in sputtered Ti films on (001)Si by rapid thermal annealing have been studied by scanning and transmission electron microscopy as well as Auger electron spectroscopy. Backsputtering cleaning of the silicon substrates was found to be effective in alleviating the island formation and in promoting the epitaxial growth. Auger depth profiles indicated that intermixing of Ti and Si occurred in samples with substrates cleaned by in situ backsputtering prior to depositions. High-resolution lattice images of cross-sectional samples revealed the presence of continuous amorphous layers between polycrystalline Ti grains and single-crystal Si substrates in the backsputtering-cleaned samples. An amorphous silicon capping layer was found to degrade the surface morphology and hinder the formation of silicide epitaxy. The formation and growth of epitaxial regions are more difficult in samples with amorphous silicon capping layer since an additional step is required for the polycrystalline grains in the upper layer to realign with the underlying epitaxial TiSi2 layer to form an epitaxial region. Better surface morphology is correlated with improved silicide epitaxy with its more favorable energetics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340977
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of IrSi3 on (111) and (001) silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1163-1167 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy has been applied to the study of interfacial reactions of iridium thin films on silicon with particular emphasis on the epitaxial growth of IrSi3 on (111) and (001)Si. The formation of precursor phases, IrSi and IrSi1.75, were found to occur mainly in the temperature ranges of 300–500 and 600–900 °C, respectively. The stable IrSi3 was found to grow epitaxially on (111) and (001)Si annealed at 1000–1100 °C. There are three dominant modes of epitaxial IrSi3 on (111)Si and one dominant mode of epitaxial IrSi3 on (001)Si. Interface structures of these different epitaxial modes were determined by diffraction contrast analysis. The quality of IrSi3 epitaxy in terms of the fraction of the silicon surface coverage, size, and the regularity of the interfacial dislocations was found to be the best in (111) samples annealed at 1000 °C. Epitaxial regions of IrSi3, as large as 40 μm in size, were observed on (111)Si. No direct correlation between lattice match and quality of epitaxy could be found. The Burgers vectors of edge-type dislocations for several modes of silicide epitaxy were found to be along the directions with larger lattice mismatches in agreement with a theory by Markov and Milchev [Surf. Sci. 136, 519 (1984)]. A superlattice structure of IrSi3 was found from diffraction pattern analysis. The superlattice structure was determined to be of hexagonal structure and has a unit cell with dimensions three times larger than that reported for IrSi3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340024
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...