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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of natural products 49 (1986), S. 1153-1153 
    ISSN: 1520-6025
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2859-2861 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Norde function [J. Appl. Phys. 50, 5052 (1979)] used for measuring the barrier height, series resistance, and ideality factor of a Schottky barrier diode has been modified to obtain the same parameters for a triangular barrier diode (TBD). Unlike Schottky barrier diodes, the barrier height of a TBD depends upon the applied voltage and changes linearly with it. In order to calculate the additive term in the TBD barrier height, the modified function is therefore plotted for both reverse and forward bias cases. It is shown later that the modified Norde function enhances the accuracy of the results.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 978-992 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: There is a worldwide effort to produce a soft x-ray source for submicron microlithography to manufacture future generation large scale integrated microchips. The gas puff plasma discharge has been suggested as a viable alternative for low volume facilities which require relatively low throughputs with a single aligner station. The repetition rate for such systems is limited by the large gas flow into the vacuum system with the standard electromechanical puff valve. A unique puff arrangement is being developed which will limit the dead gas flow and, in principle, will allow for the development of high repetition rate systems. In this arrangement, the gas flows continuously from a low-pressure plenum through an annular aperture into the Z-pinch electrode gap. A discharge through a single turn solenoid coil mounted on the outside of the plenum inductively heats the gas, temporarily increasing the mass flow to produce a low mass (〈1 μg), preionized liner which is imploded by a Z-pinch current discharge. (Multiturn coils have also been used. However, all the experiments reported in this paper used a single turn configuration.) Experiments were carried out with a variety of low-energy (〈2.5 kJ) drivers including capacitor banks, peaking capacitors, and dc charged paper/castor oil Blumleins. Radiation measurements in the ultrasoft and soft x-ray regions were made using x-ray diodes, p-i-n diodes, and a time integrated pinhole camera. A slug model coupled to a capacitor bank or Blumlein circuit solver is used to estimate the liner dynamics as well as the load current and voltage.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1207-1211 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytic model for the control of the barrier height of a triangular-barrier diode (TBD) is proposed. It is shown that an extra (p- or n-type) doping given to the two intrinsic layers of a TBD changes its barrier height over a wide range (over all 40%). A simple closed-form expression is derived to give the dependence of barrier height on the extra dopings. It is seen that the ideality of the diode is not affected in spite of a wide range of changes obtained in the barrier height. Furthermore, the differential resistance of the device is shown to exponentially decrease with the extra n-type doping given to the structure. Such a strong dependence leads to an improvement in the forward-bias cut-off frequency of the device.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1702-1706 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Bulk unipolar diodes are majority-carrier three-layer (n-p-n) semiconductor diodes in which the current flows due to the thermionic emission of majority carriers over a barrier formed in the bulk of the material. Expressions for the barrier height of two typical bulk unipolar diodes, namely a bulk barrier diode (n++p+n) and a p-plane barrier diode (n+p++n), are derived. The functional dependence of the barrier height on various technological parameters is discussed. The two diodes are quite similar in their structure and characteristics. However, the p-plane barrier diode is more suitable as a majority-carrier diode. The variation of ideality factor and the saturation current of these diodes is shown to be very similar to the metal semiconductor diode.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 4103-4107 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A modified model of a triangular barrier diode has been proposed and analyzed by considering the effect of low to moderate p-type doping in the two intrinsic regions. The presence of such acceptor impurities is shown to increase the effective barrier height. The functional dependence of barrier height, saturation current, and ideality factor on various technological parameters is discussed. A method to determine the barrier height and effective Richardson constant has also been suggested. The high-speed switching behavior of this diode is shown to improve.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3730-3733 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties of (p)aSi:H-(n)GaAs heterojunction were investigated by measuring current-voltage and capacitance-voltage characteristics. The experimental results are interpreted in accordance with a generalized a-c junction model. The built-in potential of the heterojunction and the gap-state density in the chemical vapor deposition (p)aSi:H were obtained from the capacitance-voltage characteristics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Energy & fuels 6 (1992), S. 21-27 
    ISSN: 1520-5029
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Energy, Environment Protection, Nuclear Power Engineering , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 6 (1994), S. 3539-3553 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin coating of two commercially used polymer solutions is studied both theoretically and experimentally. Physical and rheological characterization of these solutions indicates that under the spinning conditions currently used they behave as nonvolatile, viscoelastic fluids with constant viscosity and elasticity. The corresponding Reynolds (Re) and Deborah (De) numbers are up to order unity. The theoretical analysis demonstrates and explains why, at very short times after the inception of impulsive spinning, the velocity and stress fields in such fluids develop in an oscillatory manner. The amplitude of these oscillations increases with the ratio of the retardation parameter to the Deborah number, whereas their damping rate gets smaller as De increases. Since these oscillations dissipate very rapidly, and before substantial thinning of the film takes place, the thinning rate, velocity, and shear stress components do not deviate eventually from those of a Newtonian fluid. Such a complete explanation of similar experimental findings has not been offered before. The radial normal stress component does increase considerably over its Newtonian value, and this explains certain "experimental practices.'' Similar oscillatory development early on occurs even at higher Re, as long as Re∼De, but it is dissipated again, this time because of the abrupt thinning of the film. The theoretical results are in good agreement with experimental measurements of "dry film'' thickness and with dynamical measurements of "wet film'' thickness during spinning, which are reported herein for the first time. Care must be taken in reporting "dry film'' thickness because the commercial solutions under study retain part of the solvent after "soft baking'' over a hotplate. Complete solvent removal produces dry films, but requires treatment in a vacuum oven, higher temperatures, and longer heating times.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 5 (1993), S. 3197-3206 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent experimental studies on homogeneous curved shear flow have shown that the imposition of strong mean flow curvature can cause a reversal of the turbulent shear stress, giving it the same sign as the gradient of mean velocity. Measurements of the coherence spectrum for these flows has revealed that this reversal is not uniform across all scales, and that eddies of different sizes can have opposite orientations and transport momentum in opposite directions. To evaluate the influence of linear mechanisms in the shear stress reversal a "rapid distortion'' type of model was applied to those flows which demonstrated this phenomenon. The model predicts that flow curvature causes a periodic modulation of the structure of sheared turbulence, and that the sign of the shear stress reverses because of these oscillations. The period of the modulation, in terms of the total strain, was found to decrease as the turning rate increases relative to the shearing rate. For those flows which showed a reversal of the shear stress, the range of experimental observation was only a fraction of the predicted period, but interpreting the observed development as a portion of an oscillation the measurements were found to be qualitatively similar to the predictions of the linear theory. In cases of stronger turbulence a self-preserving structure developed, before the shear stress could reverse, and the measurements deviated significantly from the predictions.
    Type of Medium: Electronic Resource
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