Bibliothek

X
feed icon rss

Ihre E-Mail wurde erfolgreich gesendet. Bitte prüfen Sie Ihren Maileingang.

Leider ist ein Fehler beim E-Mail-Versand aufgetreten. Bitte versuchen Sie es erneut.

Vorgang fortführen?

Exportieren
  • 1
    Digitale Medien
    Digitale Medien
    Spectroscopic study of SiC-like structures formed on polycrystalline silicon sheets during growth (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3586-3592 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Edge-defined film-fed grown polycrystalline silicon sheets, grown with one face exposed to oxidizing CO gas added to the inert Ar atmosphere, were studied. Interaction of CO with molten silicon surface during growth produced SiC-like structures in a thin layer on the surface exposed to CO. Infrared spectroscopy results suggest that this layer is constituted of good quality SiC; however, Raman and x-ray photoelectron spectroscopy showed that it consists of Si1−xCx in the form of small crystallites mixed with C- and O-rich silicon.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356993
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 2
    Digitale Medien
    Digitale Medien
    Study of vibrational properties of InGaAsP by far-infrared reflectivity (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3085-3088 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We measured room-temperature reflectivity in the far-infrared region (100–700 cm−1) of In1−xGaxAsyP1−y films grown by metalorganic phase epitaxy on InP substrate. The actual As content of the quaternary alloy (ranging from y=0.29 to y=1) was derived by combining photoluminescence and high-resolution x-ray diffraction results. Over the whole compositional range four different vibrational branches, corresponding to InAs-like, GaAs-like, InP-like, and GaP-like mode, have been observed, thus confirming the attribution of "four-mode behavior'' to the quaternary alloy. The frequency position of the four main peaks has been calculated within a valence-force-field model. The frequency shift of these peaks in the alloy with respect to the bulk values has been explained taking into account anharmonicity and strain effects by means of a simplified elastic model.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356158
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 3
    Digitale Medien
    Digitale Medien
    Damage analysis and optical properties of Ge-implanted silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 7045-7049 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The damage produced in crystalline silicon by Ge-ion implantation at 130 keV is studied as a function of fluence. Rutherford backscattering measurements in channeling configuration and reflectivity measurements in the 1.5–6.5 eV energy range are presented and discussed. The results obtained by both techniques are in agreement on the determination of the amorphization threshold. The dielectric functions, obtained by the Kramers–Kronig analysis and checked through ellipsometric measurements at one selected wavelength, are well reproduced by finite sets of classical harmonic oscillators. It is possible to describe the behavior of the oscillator parameters through analytical functions of a single variable related to the amount of damage. In a representative case, the damage depth profile is obtained after the removal of controlled amounts of silicon by anodic oxidation, and good agreement is found with the Rutherford backscattering results.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345052
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 4
    Digitale Medien
    Digitale Medien
    Magnetization and magnetic susceptibility of the diluted magnetic semiconductor Cd1−xMnxGa2Se4 : 37th Annual conference on magnetism and magnetic materials (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 5736-5738 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Cd1−xMnxGa2Se4 crystals were grown by the vapor-phase transport technique. Magnetization measurements have been done at 1.5 K and magnetic fields up to 7 T by using extraction method on the samples with 0.05≤x≤1. A modified Brillouin function fits the data and the fitting parameters T0 (≥0) and Seff are obtained. These results reflect that there exists a weak antiferromagnetic interaction among Mn++ ions. The magnetic susceptibility was measured in the temperature range 1.5 K≤T≤300 K by using a vibrating sample magnetometer. The susceptibility displays a high-temperature Curie–Weiss behavior. From quantative analysis the exchange integral constant (J1+2J2+J3)/kB was obtained to be ∼−1.5 K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.353608
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 5
    Digitale Medien
    Digitale Medien
    Infrared determination of interstitial oxygen behavior during epitaxial silicon growth on Czochralski substrates (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4313-4320 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Interstitial oxygen profile across an epitaxial silicon and Czochralski silicon interface has been studied using high-spatial-resolution Fourier transform infrared spectroscopy. Systematic transmission measurements performed on a transversal wafer cross section evidenced oxygen contamination of the epilayer. This was due to solid-state outdiffusion from the substrate occurring during epilayer deposition. Oxygen diffusivity values resulting from the experiments suggest a mechanism scarcely influenced by the interface. Oxygen contamination is strictly related to the type of dopant present in the substrate and not to that present in the epilayer. The oxygen contamination of the epilayer (significant in n-type substrate samples) could explain the structural defects often observed in epitaxial layers by different techniques.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.352194
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 6
    Digitale Medien
    Digitale Medien
    Interaction of ambient gas and meniscus surface during growth of edge-defined film-fed growth polycrystalline silicon samples (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2963-2967 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We studied interaction of molten silicon at the meniscus surface with CO and CO2 gas added to an inert argon atmosphere during the growth of edge-defined film-fed growth polycrystalline silicon nonagons. Both gases caused a significant increase in carbon content of the nonagons. However, most carbon remained trapped in the layer close to the surface and made a SiC-like contribution to the infrared spectrum. In addition, CO2 gas caused enhanced surface oxidation (with respect to CO gas).
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349322
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 7
    Digitale Medien
    Digitale Medien
    Infrared study of oxygen precipitates in Czochralski grown silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7251-7255 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Oxygen precipitation in the bulk of silicon wafers was investigated by using micro-Fourier transform infrared spectroscopy. It was found that even at 1100 °C annealing (in single step) SiO2 precipitates are formed in platelet shape, in the bulk, giving rise to characteristic absorption peak in the infrared spectrum at 1230 cm−1. Complete mapping of wafer cross section demonstrated that these precipitates are not distributed homogeneously but are agglomerated in irregularly shaped clusters and are easily detectable up to distance of about 100 μm from the back surface and from the epi-substrate interface.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347622
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 8
    Digitale Medien
    Digitale Medien
    Infrared study and characterization of Zn diffused InP (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2445-2449 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Reflectance and transmittance spectra of p-type InP:Zn samples were measured by Fourier transform infrared spectroscopy (FTIR) in the spectral range from 40 to 700 cm−1. Zn was diffused into InP by an open-tube method, and a subsequent short annealing at different temperatures for the electrical activation of Zn diffused layers was performed. Free-carrier effects on vibrational structures around the restrahlen peak were evidenced. Concentration of electrically active Zn and free-hole damping constant were obtained by fitting reflectance spectra with a classical Drude–Lorentz dielectric function. The results confirmed the model for the electrical activation of the samples, based on outdiffusion of interstitial Zn by thermal annealing.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.354681
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 9
    Digitale Medien
    Digitale Medien
    Effect of annealing on carbon concentration in edge-defined film-fed grown polycrystalline silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3785-3787 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Carbon complex formation during annealing in the temperature range from 450 to 1150 °C is studied in a carbon-rich polycrystalline edge-defined film-fed grown (EFG) silicon sheet. The result is compared with that obtained in Czochralski (CZ) single-crystal silicon. Infrared (IR) spectroscopy reveals that carbon removal from substitutional sites above 600 °C is greatly inhibited in EFG silicon with respect to that seen in the CZ material. A broad IR peak attributed to C-O complexes appears only after annealing at highest temperatures, while there is no evidence for appearance of the sharp band at 794 cm−1 usually assigned to SiC precipitation. The suppression of carbon complex formation in EFG material is attributed to decreased availability of silicon self-interstitials necessary to promote removal of carbon from substitutional sites and to enhance its diffusivity.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.350890
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
  • 10
    Digitale Medien
    Digitale Medien
    Interstitial oxygen determination in heavily doped silicon (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1655-1660 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Systematic infrared transmission measurements have been performed on heavily Sb-doped (up to 2×1018 atoms/cm3) silicon samples. The interstitial oxygen content is obtained analyzing the optical response near the 1107-cm−1 oxygen absorption band with a new technique based on a curved baseline, accounting for free-carrier absorption. The results are discussed and compared with those obtained for the same samples by a short baseline technique and by secondary-ion mass spectroscopy (SIMS) analysis. Regression straight-line fits, relative to two lots of 16 samples each, show a good linear correlation between infrared (IR) and SIMS data, although the IR estimates are consistently lower than those obtained by SIMS.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346647
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
    BibTip Andere fanden auch interessant ...
    Artikel (Nationallizenzen)
    Volltext
Schließen ⊗
Diese Webseite nutzt Cookies und das Analyse-Tool Matomo. Weitere Informationen finden Sie hier...