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  • 1990-1994  (11)
  • 1965-1969  (2)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 394-399 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering has been carried out on PbTiO3 thin films prepared on platinum-coated (100) silicon by radio-frequency (rf)-magnetron sputtering without substrate heating and a post-deposition thermal treatment. The Raman spectra obtained from the thin film are characteristic of powder Raman spectra: In comparison with the single crystal spectra, the intensity of the background is relatively high at low frequencies and the Raman lines are broad. The lattice phonon modes corresponding to the observed lines are identified by comparison with the data on single crystals and powder. The Raman frequencies for the thin film remarkably shift to low frequencies compared with single-crystal data. It is shown that the phenomenon of the frequency shifts is similar with the hydrostatic pressure effect on single crystals of PbTiO3. The result indicates that the thin films are composed of grains that are stressed depending on the grain size by neighboring grains of different orientations when they are split up into ferroelectric domains at the paraelectric-to-ferroelectric transition. This stress effect is significant even for a grain size of ∼0.5 μm. It is found that the lowest frequency E transverse optical (TO) mode in the thin film shows softening with increasing temperature as was reported in previous studies on single crystals.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2042-2047 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical and optical spectroscopic studies of TiO2 anatase thin films deposited by sputtering show that the metastable phase anatase differs in electronic properties from the well-known, stable phase rutile. Resistivity and Hall-effect measurements reveal an insulator–metal transition in a donor band in anatase thin films with high donor concentrations. Such a transition is not observed in rutile thin films with similar donor concentrations. This indicates a larger effective Bohr radius of donor electrons in anatase than in rutile, which in turn suggests a smaller electron effective mass in anatase. The smaller effective mass in anatase is consistent with the high mobility, bandlike conduction observed in anatase crystals. It is also responsible for the very shallow donor energies in anatase. Luminescence of self-trapped excitons is observed in anatase thin films, which implies a strong lattice relaxation and a small exciton bandwidth in anatase. Optical absorption and photoconductivity spectra show that anatase thin films have a wider optical absorption gap than rutile thin films.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2945-2951 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoemission spectromicroscopy was used to investigate the electronic structure of TiO2 anatase single crystals and polycrystalline thin films. The stoichiometry and the degree of oxidation of as-grown crystals, as-deposited films, as well as of thermally annealed samples in different atmospheres, were analyzed, based on the Ti 2p and O 1s core levels, with an energy resolution of 0.4 eV. The experimental density of states (DOS) was found to be in agreement with the theoretical DOS reported in the literature for anatase crystals, and shows some characteristics similar to the experimental DOS reported for rutile crystals. In reduced samples, the experimental DOS is characterized by intense emission in the region of O 2p bonding orbitals, and does not exhibit an appreciable density of states in the band gap. As-grown crystals exhibit small band gap emission (a few percent of the valence band VB signal) at about 0.8 eV, which is attributed to Ti3+ (3d) defect states. Annealing the crystals at high temperatures in O2 or subsequent thermal reduction in an Ar–H2 mixture (95%–5%) produces nearly stoichiometric surfaces with smaller or undetectable density of Ti3+ states. In addition, some redistribution of the spectral weight is observed in the VB spectra.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 633-635 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Resistivity, thermopower, and Hall-effect measurements on large single crystals of the anatase form of TiO2 all indicate high mobility n-type carriers that are produced by thermal excitation from a density of ∼1018 cm−3 putatively present shallow donor states. The decrease of the mobility with increasing temperature is consistent with the scattering of carriers by the optical phonons of TiO2.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6625-6631 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering is used to characterize thin films of PbTi1−xZrxO3. The films have been prepared on platinum-coated (100) silicon by radio-frequency (rf)-magnetron sputtering without substrate heating followed by a post-deposition annealing at 600–650 °C. As the concentration of Zr is increased, the Raman peaks broaden and their intensities decrease more rapidly compared with bulk ceramic or powder samples, while the background intensity increases. The observations show that the crystal structure of the films is locally deformed and significantly disordered. With increasing x, the soft E(TO) mode shifts to lower frequencies. An additional Raman peak appears besides the phonon peaks expected in a perfect crystal. The soft mode strongly couples with the extra mode, similarly with the case of ceramic samples. The results are related to features of the thin films such as a frustrated phase transition, i.e., smaller differences between the lattice parameters a and c in comparison with powder data, and an electrical behavior showing a diffuse ferroelectric-to-paraelectric transition with a broad peak.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3997-4003 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We used the novel experimental technique of photoemission spectromicroscopy to investigate the active area of SnOx thin films for gas sensors, deposited by dc sputtering. First, we analyzed the degree of oxidation and the homogeneity of as-deposited films in a high lateral resolution (30 μm) spectromicroscopy mode with an energy resolution of 0.4 eV. This led to a surprising discovery of a large amount of tin monoxide on the film surface. Then we studied the interaction of H2 and H2O with the surface of polycrystalline SnO2 films used as sensitive layers in actual gas sensor devices. These results have been related to the resistivity changes of the corresponding devices: we found that such changes are primarily due to a reduction process in the film rather than to mere chemisorption.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1820-1825 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The TiSi2/Si system is investigated using high-resolution transmission electron microscopy (HRTEM) and electron diffraction in both cross-section and flat-on modes. The results show that the large crystallographic differences between both crystals and the complexity of the reaction path are not obstacles to the formation of flat and well-defined interfaces. (1¯01) TiSi2 proves to be a preferential plane for epitaxial growth on Si (111). In this case, the terminal TiSi2 plane at the interface is composed of single atomic species. It is proposed that the reasons leading to such an epitaxy are related to the small discrepancy of atomic densities and interplanar spacings characteristic of these planes. Observation of local epitaxial relationships are reported and investigated using a lattice matching model. It turns out that they minimize the two-dimensional misfit at the interface.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 979-981 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We explored the reactivity of gold on cleaved 2212 BiCaSrCuO by synchrotron-radiation photoemission spectroscopy. We found no evidence for reactivity when the substrate was at room temperature, similar to what has been reported for very low temperatures (20 K). At intermediate temperatures (100 K), however, clear evidence was found of a chemical reaction with formation of a localized nonmetallic phase. These findings have potentially important implications for the manufacturing of devices based on BiCaSrCuO.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 10 (1969), S. 85-106 
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Résumé Les paramètres des réseaux cristallins de plusieurs composés trivalents des terres rares LnX (X=P, As et Sb) ont été mesurés de la température ambiante à celle de l'hélium liquide. Au-dessous de leur température de Néel, ces cristaux antiferromagnétiques ou ferrimagnétiques ont une cellule primitive déformée par rapport à la cellule cubique à faces centrées du type NaCl, à température ambiante. Les composés de l'ion Tb3+ se contractent le long d'une direction trigonale (TbSb:Δα=8′) et ceux de Nd3+, Dy3+ et Ho3+, le long d'une direction tétragonale (DySb: (a−c)/a=7‰). Au moyen de la technique des opérateurs équivalents, la décomposition en termes du multiplet fondamental des ions Ln3+ est calculée dans les champs octaédriques déformés. Les distorsions mesurées, de l'ordre de quelques ‰ provoquent un abaissement du niveau fondamental. Sur la base du modèle des charges ponctuelles, le gain d'énergie produit par la déformation est de l'ordre de 10% de la décomposition totale dans le champ cubique.
    Abstract: Zusammenfassung Die Gitterkonstanten und die Strukturänderungen einiger dreiwertiger Verbindungen Seltener Erden vom Typ LnX (X=P, As und Sb) wurden zwischen Zimmertemperatur und der Temperatur des flüssigen Heliums gemessen. Unterhalb der antiferromagnetischen bzw. ferrimagnetischen Ordnungstemperatur beobachtet man eine anisotrope Verzerrung der Elementarzelle, und zwar eine Kontraktion in der trigonalen Richtung bei den Tb-Verbindungen, und in der tetragonalen Richtung bei denjenigen Verbindungen, die Nd, Dy und Ho enthalten. Mit Hilfe der Methode der Operatoräquivalenz werden die Energieniveaus des Grundmultiplets der SE-Ionen in einem deformierten oktaedrischen Kristallfeld berechnet. Obwohl die relative Gitterverzerrung nur einige 10−3 beträgt, kann die Änderung der Kristallfeldaufspaltung bis 10% betragen und so vergleichbar mit der Deformationsenergie werden.
    Notes: Abstract The crystal lattice parameters of some trivalent compounds of the Rare Earth LnX (X represents one of the elements P, As or Sb) have been measured between room temperature and liquid Helium temperature. The rocksalt structure of these antiferromagnetic crystals undergoes an anisotropic distortion at the Néel point. The Tb3+ compounds shrink along a trigonal direction and those with Nd3+, Dy3+ or Ho3+ along a tetragonal axis. These shrinkages are of the order of a few parts per thousand. This perturbation of the crystal field potential lowers the ground state energy level in the J-multiplet of the magnetic ion. The level splitting in distorted octahedral fields is calculated with the operator equivalent technique and the eigenvalues are expressed as a function of a distortion parameter. The measured distortions cause changes which are about 10% of the over-all-splitting of the J-multiplet.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 10 (1969), S. 71-84 
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Résumé La mesure des paramètres des réseaux cristallins des semi-conducteurs ferromagnétiques EuO et EuS, à basse température, révèle que le volume de ces cristaux est réduit de 3, respectivement de 1,2‰, lorsqu'ils sont refroidis au-dessous de leur température de Curie. Cette contraction est attribuée à la magnétostriction d'échange et la variation relative de volume est proportionnelle à la fonction de corrélation des spins. Dans l'approximation du champ moléculaire, cette interaction magnétoélastique peut être représentée par la relationT C=T 0[1+β(V−V 0/V 0]. Pour EuO et EuS, les valeurs du paramètre d'interaction magnétoélastiqueβ sont respectivement −3,5 et −6,4, en accord avec les valeurs dérivées des mesures du point de Curie en fonction de la pression. Aucune anomalie d'expansion thermique n'a été décelée dans les combinaisons EuSe et EuTe.
    Abstract: Zusammenfassung Die Messung der Gitterparameter der ferromagnetischen Halbleiter EuO und EuS bei tiefen Temperaturen zeigt, daß unterhalb der Curietemperatur eine Volumenkontraktion von 3 bzw. 1,2‰ auftritt. Die der spontanen Magnetostriktion zugeschriebene Volumenabnahme ist proportional zur Spinkorrelationsfunktion. In der Molekularfeldnäherung wird diese magnetoelastische Wechselwirkung durch das VerhältnisT C=T 0[1+β(V−V 0)/V 0] beschrieben. Für EuO und EuS sind die Werte des magnetoelastischen Parametersβ gleich −3,5 bzw. −6,4 und stimmen mit den Werten überein, die aus den Messungen der Druckabhängigkeit des Curiepunktes bestimmt wurden. Sowohl in EuSe als auch in EuTe wurden keine Anomalien der Gitterparameter gefunden.
    Notes: Abstract X-ray measurements as a function of the temperature of the crystal lattice parameters of EuO and EuS reveal a volume reduction of 0.3% and 0.12%, respectively, when these crystals are cooled through the Curie temperature. This contraction can be assigned to the exchange-striction and the relative volume variation is proportional to the spin correlation function. Within the molecular field approximation, this magnetoelastic interaction is described by the relationT C=T 0[1+β(V−V 0)/V 0]. For EuO and EuS the values of the magnetoelastic interaction parameterβ are −3.5 and −6.4, respectively, in agreement with the values derived from measurements of the pressure dependence of the Curie temperature. No anomaly of the expansion coefficient has been detected in the EuSe and EuTe compounds.
    Type of Medium: Electronic Resource
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