ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present the structure of a GaAs/GaAlAs quantum well, which can promote strong mixing rates upon high-dose implantation, with good recovery of the electronic properties after annealing. This structure is employed to fabricate quantum-well wires by Ga+ masked implantation. Low-temperature photoluminescence measurements reveal large lateral modulations of the effective band gap ((approximately-greater-than)178 meV), and small lateral interdiffusion lengths (10 nm). A simple calculation shows that one-dimensional quantization energies between 11 and 20 meV can be expected in these structures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350601
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