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  • 1990-1994  (16)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Human communication research 17 (1991), S. 0 
    ISSN: 1468-2958
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Media Resources and Communication Sciences, Journalism
    Notes: This study extended Brown and Levinson's model of politeness in order to explain more complicated forms of interaction and proposed three different types of facework: solidarity, approbation, and tact. The effects of three social factors—relational intimacy, power difference, and the right to perform a given act in a given situation—on the three types of facework were examined. Relational intimacy was the strongest positive predictor of facework. Its effect was consistent across different types of facework and across different levels of power and right. The right to perform a certain act and speaker's power decreased facework, but these effects were mediated by relational intimacy, achieving significance mainly in distant relationships. The study also examined the relationships among different types of facework. Respondents used multiple types of facework when multiple face wants were threatened, and the use of one type of facework did not decrease the use of other types.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Bradford : Emerald
    Information, technology & people 7 (1994), S. 7-28 
    ISSN: 0959-3845
    Source: Emerald Fulltext Archive Database 1994-2005
    Topics: Computer Science , Sociology
    Notes: Commercial software systems intended to support the work of groups arenow freely available. However, uptake of these systems has beenrelatively poor and limited user experience has been reported. Presentssome experiences from a study of a network that explicitly aims toinvestigate the effectiveness of computer-supported co-operative work(CSCW) tools. Focuses on the currently hidden cost of managing thenetwork. Also explores the implications for CSCW systems development byoutlining an exploration of support for the management of a CSCWnetwork.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Risk analysis 13 (1993), S. 0 
    ISSN: 1539-6924
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 96 (1992), S. 7135-7143 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Using the Rouse/Zimm model for polymers, we have derived the low field dynamics for a flexible polymer in transient electric birefringence (TEB). Three orientation mechanisms were included; a permanent dipole from fixed charges, a local induced dipole dependent on the local conformation, and a global induced dipole dependent on the global conformation. The rise, decay, and reverse pulse behavior have been determined for all three, independently and combined. The condensed ion theory of Manning has been used to describe the global orientation mechanism of DNA. We find good agreement for the steady state birefringence and the predictions from theory with no adjustable parameters.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2974-2976 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We systematically measured the active-area dependence of the threshold current density of GaInAsP/InP vertical-cavity lasers at various temperatures. The threshold current density was found to increase monotonically with increasing active area, with the effect becoming more pronounced at higher temperature. This phenomenon is due to nonuniform current injection into the active region.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1610-1612 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter studies the inherent bandwidth limits in high speed semiconductor lasers caused by microwave signal propagation along the device. We show experimentally and theoretically that microwave propagation at high frequency is dominated by loss and slow wave effects. The primary conclusions from this study are (1) the standard treatment of a diode laser as a lumped electrical element is invalid above 25 GHz for device lengths on the order of 300 μm and (2) the frequency dependence of the microwave loss results in rolloff in the modulation response at high frequency. This roll off results in bandwidth degradation relative to the simplistic lumped element case and leads to new length and electrode considerations in the design of high speed lasers.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 300-302 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simple holographic lithography and wet etching have been used to fabricate strain-induced quantum well dot structures. Lateral confinement was generated in a GaAs quantum well (QW) by etching a double-exposed grating pattern into a pseudomorphic, strained layer of In0.3Ga0.7As which overlies the QW. By spacing three QWs of different widths at varying depth from the stressor, lateral strain confinement and vertical strain propagation are directly resolved. We have observed at 14 meV redshift in the photoluminescence spectra for the QW located 22 nm away from the stressors and have confirmed that the strain propagation depth along the material growth direction is comparable to the lateral dot dimension.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1835-1837 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a model for the dynamic response of quantum well lasers which shows that the carrier transport across the separate confinement heterostructure region and the barriers can be critical in determining the modulation bandwidth. We also show that, depending on the particular quantum well laser structure, a large part of the experimentally measured reduction in modulation bandwidth is due to transport factors.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1762-1764 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: General scaling laws for gain-guided vertical cavity lasers with distributed Bragg reflectors are introduced. The validity of these laws is verified using a self-consistent calculation of transverse modes and propagation constants for two-dimensional laser cavities. The definition of Fresnel number is generalized to cavities with distributed mirrors. We show that all of the resonator parameters—the threshold gain, the frequency spectrum, and the transverse mode patterns scale with the ratio between the Fresnel number and the cold cavity finesse.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 396-398 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of damping in quantum-well lasers has been investigated. The lasers with large K factors at room temperature show a rapid increase of the K factor with temperature. The temperature dependence of the K factor is larger for lasers with wider separate confinement heterostructure region, fewer wells, and narrower quantum-well width. The carrier transport in quantum-well structures is responsible for the excess increase of the K factor at high temperatures.
    Type of Medium: Electronic Resource
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