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  • 1990-1994  (45)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 8254-8259 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The thickness of the interface between two-dimensional fluid phases is determined as a function of temperature by using the method of molecular dynamics. The model fluid is one of particles interacting via a truncated Lennard-Jones potential. Periodic boundary conditions are used and no macroscopic external field such as gravity is imposed. The temperature is varied between that of the triple point to values as close to the critical point as is consistent with the finiteness of the system studied on the computer. Because of the relatively small interfacial area probed in these simulations, long-wavelength capillary waves are strongly suppressed and within statistical uncertainty, the results for the interfacial thickness are found to be consistent with the prediction of the nonclassical van der Waals theory of the intrinsic interface.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 93 (1990), S. 6800-6803 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: An analytic expression is derived for the interfacial profile of a liquid–vapor or a liquid–liquid phase equilibrium by assuming, in accord with current ideas, that the equilibrium interface consists of an intrinsic interface of the nonclassical van der Waals type broadened by capillary wave fluctuations. It is shown that in two dimensions of space, the interfacial thickness exhibits a crossover with change of critical exponent from capillary wave behavior at low and near-critical temperatures, to van der Waals behavior at temperatures very close to the critical temperature. The location of the crossover temperature is determined by the ratio of the critical amplitudes of the root-mean squared interfacial thickness and the bulk correlation length. From available experimental data and theory, an estimate of the order of magnitude of the critical amplitude ratio is made, from which the crossover is found to occur in the temperature range 3×10−4 K〈(Tc−T)〈0.3 K. In the currently accessible temperature range, the capillary wave prediction prevails, in contrast to the case of three-dimensional systems.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3143-3149 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A transmission electron microscopy study of oxidation kinetics of C54-TiSi2 for both dry and wet oxidation has been carried out. Precautions were taken to determine the activation energies of oxidation in the temperature and time regime where the islanding of TiSi2 did not occur. For dry oxidation, activation energies for parabolic and linear growth were found to be 1.97 and 2.50 eV (with an error bar of ±0.1 eV), respectively. On the other hand, activation energies for parabolic and linear growth were found to be 1.88 and 2.10 eV (with an error bar of ±0.1 eV), respectively, for wet oxidation. The activation energy of parabolic rate constant is seen to be substantially different from those obtained previously. The difference is attributed to the occurrence and absence of islanding during oxidation in the previous and present study, correspondingly. The closeness of linear activation energy of TiSi2 oxidation with that of pure silicon is thought to be due to the fact that both are related to the breaking of the Si—Si bonds at the silicon surface. Orthorhombic TiO2 was observed to form on the surface of all samples wet oxidized at 880–1040 °C for 5–70 min. For dry oxidized samples, no TiO2 was detected in samples dry oxidized at 880–940 °C for 5–50 min and at 920 °C for up to 6 h. However, in samples dry oxidized at 920 °C for 10–15 h, TiO2 was found to form. For dry oxidation, it is thought that although the formation energy of TiO2 is considerably higher than that of SiO2, the nucleation barrier for forming TiO2 is higher. Only after prolonged oxidation was the nucleation barrier overcome and led to the formation of TiO2.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 98 (1994), S. 1910-1917 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 865-870 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission electron microscopy has been applied to study oxidation kinetics of CoSi2 on silicon for both dry and wet oxidation. Care was taken to determine the activation energies of oxidation in the temperature and time regime where the islanding of CoSi2 does not occur. For dry oxidation, activation energies for parabolic and linear growth were found to be 1.91 and 2.01 eV (±0.1 eV), respectively. For wet oxidation, activation energies for parabolic and linear growth were found to be 1.75 and 1.68 eV (±0.1 eV), respectively. The activation energy of the parabolic rate constant is substantially different from those obtained previously. The difference is attributed to the occurrence of islanding during oxidation in the previous study. A comparison of oxidation kinetics of CoSi2, NiSi2, TiSi2 on silicon with pure silicon substrates indicated that the oxidation kinetics are practically the same for CoSi2 and NiSi2 in the parabolic growth regime, but substantially different from those of TiSi2 on silicon and pure silicon. The similarity in oxidation kinetics of cubic CaF2 structure CoSi2 and NiSi2 on silicon with small mismatches to silicon is correlated to essentially the same stress level in these two silicides during the oxidation.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5744-5747 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution transmission electron microscopy (HRTEM) has been applied to study the atomic structure of the Si/TbSi2/(111)Si double-heterostructure interfaces. The unrelaxed geometrical models of Si/TbSi2/(111)Si interfaces can be systematically deduced from the dichromatic constrained-coincidence-site-lattice patterns. The atomic structures were determined by comparing HRTEM images with computer-simulated images. The relationships of interface bonding and structures of epitaxial Si/TbSi2 and epitaxial TbSi2/Si interfaces are discussed.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2007-2014 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions of ultrahigh vacuum deposited Y-Si multilayer thin films have been studied by both conventional and high-resolution transmission electron microscopy, Auger electron spectroscopy, and x-ray diffraction. An amorphous Y-Si intermixing layer with a composition approximately equal to YSi2 was found to form in multilayer films with a composition ratio of 1Y:2Si at room temperature. Homogenization in atomic composition in the amorphous phase proceeded in samples annealed at 250–350 °C. In samples annealed at 400 °C for 30 min, the amorphous layer was completely transformed to crystalline YSi2. The formation of crystalline Y5Si3 and YSi was detected in as-deposited samples with concentration ratios 1Y:1Si and 5Y:3Si as well as in samples prepared with excess Y. Y5Si3 was the only silicide phase present in 5Y:3Si films after 400 °C annealing. The results indicated that the phase formation and stability in Y-Si multilayers depend critically on the composition. Based on the prediction of a growth control model, it was concluded that the formation of amorphous layer at room temperature is controlled by nucleation.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5507-5509 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature oxidation of (111)Si catalyzed by η‘-Cu3Si has been studied by transmission electron microscopy, x-ray diffractometry (XRD), and Auger electron spectroscopy. XRD analysis showed that volume fractions of η‘-Cu3Si and Cu decrease and increase with exposure time in air ambient, respectively. From TEM diffraction analysis, Cu precipitates were found to be epitaxially related to Si. After prolonged exposure in air, the Cu precipitates were found to form an irregular network structure in the SiO2 layer. Examination of the same area of annealed samples with intermittent exposure in air indicated that the oxidation was mainly initiated at the grain boundaries. Significant differences in room-temperature oxidation behavior between (111) and (001) samples were found.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3611-3613 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature oxidation of (001)Si catalyzed by Cu3Si has been investigated by transmission electron microscopy (TEM) and x-ray diffractometry (XRD). For η‘-Cu3Si thin layer on (001)Si, XRD analysis showed that volume fractions η‘-Cu3Si and Cu decrease and increase with the exposure time in air, respectively. TEM revealed the presence of a high density of Cu precipitates in the SiO2 layer. After prolonged exposure in air, the Cu precipitates were observed to form an irregular network. The thickness of starting Cu, hence Cu3Si, layer on silicon was found to be a critical factor in determining the oxidation behavior. Based on the microstructural evolution data, a partial reconstitution of catalytic Cu3Si mechanism is proposed to be the dominant process for the room-temperature oxidation of silicon catalyzed by Cu3Si.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 278-284 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Both conventional and high resolution transmission electron microscopy have been applied to study the crystal structures and microstructures of ZrSi and HfSi formed in the interfacial reactions of metal thin films on (111)Si. Both CrB and FeB type monosilicides were observed to form. The theoretically predicted and measured values of lattice parameters were found to be very close. A number of planar defects were detected to be present in ZrSi and HfSi. The textured growth of both monosilicides is explained in terms of preferential growth of these silicides along specific directions of silicon substrates which can be derived from the crystal structures and matching of atomic structures between silicides and silicon.
    Type of Medium: Electronic Resource
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