Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
71 (1992), S. 1517-1521
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The effect of neutron induced defects on Si detectors was studied both experimentally and theoretically. These defects form deep energy levels within the band gap. Four such levels were detected: 0.17, 0.24, 0.4, and 0.46 eV, using DLTS (deep level transient spectroscopy). The corresponding defects were identified and characterized. The capacitance was measured at different frequencies and temperature. It was shown that the capacitance of the irradiated detectors strongly depends upon temperature. A relation for this dependence (C-T) was found. Comparisons of DLTS with C-T results showed good agreement.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.351221
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