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  • 1
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3123-3129 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We deposit hydrogenated amorphous silicon (a-Si:H) on a novel "macroscopic'' trench substrate using both remote hollow cathode (HC) silane discharges and reactive magnetron sputter (RMS) deposition sources. Both methods produce state of the art optoelectronic quality a-Si:H. We analyze the surface coverage profiles in terms of the surface reaction probability β, using a Monte Carlo simulation to correct for particle reflection and loss. We also measure the deposited film quality as a function of position in the trench. For low power silane HC deposition, we find β=0.28±0.05, whereas for the RMS case β=0.97±0.05. In contrast to the prevailing thinking in the a-Si:H field, this result demonstrates that β is not universally correlated with film quality. We discuss the role of energetic particle bombardment in RMS that permits high quality films to be deposited despite the high precursor reactivity.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1856-1870 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The release of molecular hydrogen from the growing surface of hydrogenated amorphous silicon films is determined using an isotope labelling technique. The results demonstrate that surface-bonded H atoms are readily abstracted by atomic hydrogen arriving from the gas phase. The films are deposited by dc reactive magnetron sputtering of a silicon target in an argon-hydrogen atmosphere. To achieve isotope labeling, we first deposit a deuterated amorphous silicon film, then commence growth of hydrogenated amorphous silicon and measure the transient release of HD and D2 from the growing surface using mass spectrometry. Release occurs when the supply of reactive hydrogen in the growth flux exceeds the incorporation rate into the film, and is observed under all experimental conditions. The net rate of H incorporation is known from ex situ measurements of film growth rate and hydrogen content. We combine the H release and incorporation data in a mass balance argument to determine the H-surface kinetics. Under conditions which produce electronically useful films, (i) 0.5–1.0 hydrogen atoms react with the growing surface per incorporated silicon atom, (ii) the near surface of the growing film contains 1–3×1015/cm2 of excess hydrogen, (iii) the dominant hydrogen release mechanism is by direct abstraction to form H2 molecules, and (iv) the kinetics of H release and incorporation can be described by constant rate coefficients. These data are supported by studies of H interactions with single-crystal silicon and amorphous carbon surfaces.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6220-6228 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3064-3071 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparative study of the various model assumptions in Monte Carlo simulations of low-pressure sputter-atom transport is presented. The few-collision conditions and actual "racetrack'' magnetron geometry, typical of low-pressure magnetron sputtering, are emphasized. For the gas phase scattering problem, a comparison is made between hard sphere, Lennard–Jones 6-12, and Abrahamson Thomas–Fermi–Dirac [Phys. Rev. 178, 76 (1969)] interatomic potentials. The hard sphere potential results in both a significantly lower energy distribution and a more diffuse angular distribution for the depositing flux, as compared with the more realistic "softer'' potentials. Because energy-dependent cross sections are obtained when using the 6-12 and Abrahamson potentials, an "energy filtering'' effect is observed, i.e., high-energy particles arrive at the substrate preferentially to those at low energy. It is concluded that the hard sphere model will lead to serious errors in both the energy and angular distributions of the arrival flux, and that the 6-12 and Abrahamson potentials yield results that are similar to each other. For the nascent sputter distribution, fractal TRIM (transport of ions in matter) simulations are compared to the analytic Thompson distribution. While both distributions give nearly identical results for the angle-integrated fluxes, the fractal TRIM distribution shows a strong angular dependence of the energy distribution. The implications of this effect for finite geometry systems are discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4771-4780 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the initial silane and polysilane product yields from disilane decomposition in rf and dc discharges, at 25 and 250 °C and 20 Pa (0.15 Torr) pressure as typically used for a-Si:H film deposition. From analyses of these yields we conclude that the initial Si2H6 fragmentation pattern is SiH3+SiH2+H (91±9%) and H3SiSiH+2H (9±9%), that the primary product of the H+Si2H6 reaction is SiH4+SiH3, and that SiH3 is the dominant radical causing film growth. We have measured a radical-surface reaction probability of 0.34±0.03, very similar to that observed for SiH3 in SiH4 discharges. We report a spatial distribution of emission indicative of a γ-regime discharge. From deposition on glass fibers strung between the electrodes, we find that highly strained a-Si:H film is produced everywhere except on or near the electrodes, suggesting that energetic ion impact is necessary to yield useful films in disilane discharges.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4727-4738 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed kinetic study of silane-germane glow discharges is presented. Stable gas decomposition and production rates have been measured using mass spectrometry and a kinetic model for the plasma chemistry is developed. It is found that germane depletes about four times faster than silane, nearly independently of their relative fractions. Germane is found to be much more reactive than silane with silylene, germalyn, and atomic hydrogen, and the silylene-germane reaction leads in large part to film rather than stable gases. The spatial characteristics of the discharge are studied using optical emission and fiber deposition profiles. From these it is deduced that the present, low-power discharge operates in a "hybrid'' α-γ regime, and that ion effects are important near the electrodes.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4169-4177 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The stable gas products of germane dissociation and subsequent radical reactions have been measured in pure germane glow discharges characteristics of the initial germane fragmentation are inferred from these data. The spatial distribution of discharge optical emission, and of film deposition on glass fibers, have also been measured. Finally, the surface reaction probability β of depositing neutral radicals has been measured to be 0.61±0.09 on the grounded electrode. Major differences between germane and silane discharges occur in all these observables. Possible explanations of these differences are given, but much less chemical data exists for germane, thereby precluding definitive judgments. A probable cause of the normally much poorer semiconductor quality of a-Ge:H films, compared to a-Si:H, is suggested. This is based on the thermodynamics of the H2 release reaction at the growing surface.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4375-4384 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-dependent production of higher-silane gases and a-Si:H film are measured relative to decomposed silane in rf and dc, hot and cold cathode, static-gas discharges. From the absence of higher-silane production in very low silane partial-pressure discharges, it is inferred that most higher silanes are produced by gas-phase SiH2-initiated reactions. The higher silanes are thus tracers of SiH2, while the film production traces the fraction of H, SiH, and SiH3 in the initial decomposition. From the measured stable product yields, we deduce that SiH4→SiH2+2H is the dominant electron-collisional dissociation channel.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Ecology, Evolution, and Systematics 25 (1994), S. 325-349 
    ISSN: 0066-4162
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Biology
    Type of Medium: Electronic Resource
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