Electronic Resource
Pfeiffer, W.
;
Deicher, M.
;
Keller, R.
;
[et al.]
Magerle, R.
;
Recknagel, E.
;
Skudlik, H.
;
Wichert, Th.
;
Wolf, H.
;
Forkel, D.
;
Moriya, N.
;
Kalish, R.
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
58 (1991), S. 1751-1753
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The Cd-H complex in 111mCd-doped GaAs implanted with low-energy (150–400 eV) hydrogen atoms is identified and studied by perturbed angular correlation spectroscopy using radioactive 111mCd as a probe. By measuring the fraction of Cd-H pairs in an isochronal annealing experiment, the stability of the pairs is deduced yielding a dissociation energy of ED=1.35(10) eV. After 111mCd implantation but preceding the H loading, the GaAs samples have to be annealed at temperatures exceeding 900 K in order to form Cd-H pairs. These temperatures are in agreement with the temperature range required for electrical activation of Cd implants, suggesting that a Coulombic interaction is responsible for the formation of Cd-H pairs in GaAs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105079
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