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Digitale Medien

Temperature and impact ionization effects on fT of advanced bipolar transistors (1991)

Yuan, J. S. ; Yeh, C. S. ; Gadepally, B.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 70 (1991), S. 2402-2407

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Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Modeling the cutoff frequency (fT) of the advanced bipolar transistors at avalanche breakdown has been developed. The analytical equations developed account for temperature and impact ionization effects on fT and high-current effects at the collector-base junction. Process sensitivity of the collector charging time at the avalanche breakdown regime has been examined. The experimental data reported in the literature are compared in support of the model. Good agreement between the model prediction and measurement is obtained.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.349391

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