Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1990-1994  (2)
Material
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5940-5945 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time centroid of the current pulse induced at the anode of a semiconductor drift detector is calculated as a function of the interaction coordinate for arbitrary drifting fields. The effects of its behavior on the determination of the absolute position of the interaction point are studied. For a typical bias condition of the detector, the paper shows that an error up to few hundred micrometers is made in the position reconstruction of the event if the described effects of the induction are not taken into account. The paper also shows that the time shift due to the perturbation of the drifting field caused by the discreteness of the field electrodes, is only of less than 1 ns, and therefore negligible in most applications.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 3593-3599 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents a method for the measurement of doping fluctuations in high resistivity silicon wafers. Spatial fluctuations of doping are derived from the knowledge of the electrostatic potential in a completely depleted semiconductor bulk. The potential variations are indirectly measured through the analysis of the trajectories of majority carriers drifting within the depleted semiconductor material. Regions of semiconductors up to the full wafer can be investigated. An example of mapping along parallel lines of a floating zone 2 K Ω cm silicon wafer over an area of 0.4×0.8 cm2 is presented. The relative sensitivity of the method is better than 1%.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...