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Deposition of superconducting YBaCuO thin films by pseudospark ablation (1990)

Höbel, M. ; Geerk, J. ; Linker, G. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 56 (1990), S. 973-975

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Thin YBaCuO films have been deposited on ZrO2(Y) and SrTiO3 substrates by a novel ablation method, using a pulsed intense electron beam generated by a pseudospark source. Films with zero resistance around 85 K were grown at substrate temperatures of 820 °C with high reproducibility. X-ray analysis indicates highly textured growth on both substrates. Jc values were 6×106 A/cm2 at 4.2 K and 1.1×105 A/cm2 at 77 K. Because of the high simplicity of the deposition system and the variety of changeable parameters it represents an interesting alternative to existing laser ablation methods.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.102596

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HTSC thin film growth by inverted cylindrical magnetron sputtering (1992)

Geerk, J. ; Linker, G. ; Meyer, O.

Springer

Journal of superconductivity 5 (1992), S. 345-351

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ISSN: 1572-9605

Keywords: HTSC thin films ; cylindrical magnetron sputtering

Source: Springer Online Journal Archives 1860-2000

Topics: Electrical Engineering, Measurement and Control Technology , Physics

Notes: Abstract Inverted cylindrical magnetron sputtering (ICM) is a reliable and reproducible method for the production of HTSC thin films. This allows systematic studies of film growth as a function of various deposition parameters, including film thickness, substrate material, or buffer layers. After describing in some detail the special demands on sputtering devices for HTSC thin film growth, we report the growth conditions and growth quality of 1–2–3 films of different orientation on substrates such as SrTiO3 and MgO. Furthermore, we report on the growth of buffer layers of YSZ onR-plane sapphire. Epitaxial GdBa2Cu3O7 films grown on these buffer layers showed critical current densities of 3×106 A/cm2 at 77 K and a zero resistance transition temperature of 92.5 K.