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  • 1
    Electronic Resource
    Electronic Resource
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 37-38 (Mar. 1994), p. 107-118 
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 584-591 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemical composition of the surfaces and interfaces of NbN-MgO-NbN trilayers has been studied by x-ray photoelectron spectroscopy during the fabrication of the trilayer without breaking the vacuum. The NbN and MgO layers were prepared by rf magnetron sputtering. The results of the chemical analysis have been correlated to the electrical characteristics of the completed NbN-MgO-NbN tunnel junctions. During the deposition of the MgO barrier layer the presence of a high amount of energetic oxygen ions and atoms in the sputtering plasma results in a strong plasma oxidation of the NbN base electrode and, hence, in mixed Nb2O5-MgO barriers. The oxygen ions and atoms are generated by the dissociation of the target material and the water of the background pressure. Their amount was found to increase with increasing argon pressure during the MgO sputtering process. Also, adsorption layers of hydroxides on the MgO-target result in the formation of an uncontrollable amount of niobium oxide components at the interface between the NbN base electrode and the MgO barrier. The current-voltage characteristics of tunnel junctions with such barriers show large subgap leakage currents. Pure MgO barriers can be prepared by reducing the oxygen bombardment of the NbN films during the MgO deposition. Pure MgO barriers are oxygen deficient and easily adsorb hydroxides. These hydroxides react with the first layers of the NbN top electrode to NbO2 and NbO thereby reducing and broadening the sumgap value of the tunnel junctions. Tunnel junctions with pure MgO barriers of a nominal thickness of less than 2 nm usually have current-voltage characteristics indicative for microshorts. A special annealing procedure of the NbN-MgO bilayers prior to the deposition of the top electrode desorbs the hydroxides, transforms Mg(OH)2 to MgO without forming metallic magnesium and prevents the formation of intermediate layers of niobium suboxides and metallic shorts.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1843-1845 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Three-terminal YBa2Cu3O7−δ thin film devices based on a parallel array of grain boundary Josephson junctions were fabricated. The multiloop superconducting device is controlled by the magnetic field generated by a current Ictrl, which modulates the critical current Ic through the Josephson junction array. For these devices a current gain ranging between 2 at 77 K and 5 at 30 K was obtained. The spatial homogeneity of the device properties was studied by low-temperature scanning electron microscopy and by the determination of the supercurrent correlation function. Comparing the measured and the theoretically expected supercurrent correlation function shows that the device characteristics agree well with those expected from the device geometry.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4581-4587 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature and the dc magnetic field dependence of the effective surface impedance Zs of epitaxial YBa2Cu3O7−x thin films on [001] tilt SrTiO3 bicrystals with tilt angles of 36.8° and 24° have been investigated at 87 GHz. The effects of the grain boundaries become increasingly important with decreasing characteristic voltage IcRn and increasing unit areal normal resistance RnA. The boundaries can consistently be described with a resistively shunted Josephson transmission line model taking into account the effect of finite film thickness. Thermal or magnetic loading of the junction leads to additional losses, whereas the effective microwave penetration depth exhibits a specific extremal behavior. From the magnetic response of Zs at 4.2 K, the junction lower critical fields as well as the values of IcRn and RnA can be deduced. The data agree well with dc transport measurements.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2659-2666 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Nb/AlOx/Nb tunnel junctions have been fabricated on Si membrane windows of only 1.2 μm thickness acting as substrates. The membrane windows with areas between (600 μm)2 and (1200 μm)2 remained undamaged after the different fabrications steps. The tunnel junctions positioned on the membranes and the bulk silicon substrate have very similar current-voltage characteristics. Using low-temperature scanning electron microscopy the two-dimensional heat diffusion process has been imaged in the detector geometry. This two-dimensional heat diffusion leads to a new cryoelectronic radiation detector concept combining high energy and spatial resolution with a large effective detector area. Applications of this detector concept include soft-x-ray spectroscopy and the nuclear β decay.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 8005-8015 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using Low Temperature Scanning Electron Microscopy (LTSEM) we have studied the spread of the critical current values in one- and two-dimensional arrays of high-Tc grain boundary Josephson junctions (GBJs). For series arrays the critical current values and the magnetic field dependences of all GBJs within the array could be imaged by LTSEM. Our measurements showed that part of the spread of the critical current values derived from measurements of the current-voltage characteristics is caused by variations of the local magnetic field at the junction position. For bicrystal GBJs a Gaussian distribution of the critical current values with a spread as small as ±20% was found. For the investigated step-edge and biepitaxial GBJs the spread of the critical current values was considerably larger. The LTSEM technique also was used to study the spatial homogeneity of the critical current density of the different types of YBa2Cu3O7−δ grain boundary Josephson junctions with a spatial resolution of 1μm. Whereas the critical current density of bicrystal GBJs showed only small variations on this length scale, strong inhomogeneities were found for step-edge and biepitaxial GBJs. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent operation of the Tokamak Fusion Test Reactor (TFTR) [Plasma Phys. Controlled Nucl. Fusion Research 1, 51 (1986)] has produced plasma equilibria with values of Λ≡βp eq+li/2 as large as 7, εβp dia≡2μ0ε〈p⊥〉/〈〈Bp〉〉2 as large as 1.6, and Troyon normalized diamagnetic beta [Plasma Phys. Controlled Fusion 26, 209 (1984); Phys. Lett. 110A, 29 (1985)], βNdia≡108〈βt⊥〉aB0/Ip as large as 4.7. When εβp dia(approximately-greater-than)1.25, a separatrix entered the vacuum chamber, producing a naturally diverted discharge that was sustained for many energy confinement times, τE. The largest values of εβp and plasma stored energy were obtained when the plasma current was ramped down prior to neutral beam injection. The measured peak ion and electron temperatures were as large as 24 and 8.5 keV, respectively. Plasma stored energy in excess of 2.5 MJ and τE greater than 130 msec were obtained. Confinement times of greater than 3 times that expected from L-mode predictions have been achieved. The fusion power gain QDD reached a value of 1.3×10−3 in a discharge with Ip=1 MA and εβp dia=0.85. A large, sustained negative loop voltage during the steady-state portion of the discharge indicates that a substantial noninductive component of Ip exists in these plasmas. Transport code analysis indicates that the bootstrap current constitutes up to 65% of Ip. Magnetohydrodynamic (MHD) ballooning stability analysis shows that, while these plasmas are near, or at the βp limit, the pressure gradient in the plasma core is in the first region of stability to high-n modes.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 996-998 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed a detailed study of the superconducting transport properties of Bi2Sr2CaCu2O8+x bicrystal grain boundary junctions (GBJs). The GBJs were fabricated by the deposition of c-axis oriented epitaxial Bi2Sr2CaCu2O8+x films on SrTiO3 bicrystal substrates. The measured resistive transition R(T), the current-voltage characteristics (IVCs), the temperature dependence of the critical current density Jc(T), and the magnetic field dependence of the critical current Ic(B) of the Bi2Sr2CaCu2O8+x GBJs are similar to those observed for YBa2Cu3O7−δ GBJs. However, for the same misorientation angle the magnitude of Jc is almost an order of magnitude smaller for the BSCCO-GBJs. The R(T) dependencies and the IVCs of the BSCCO-GBJs are close to the prediction of the resistively shunted junction (RSJ) model. The Ic(B) dependencies are close to those of large Josephson junctions with overlap geometry. Our results show that BSCCO-GBJs may be useful for cryoelectronic applications.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 783-785 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed a detailed study of the magnetic field dependence of the critical current, Ic(B), of YBa2Cu3O7−δ bicrystal grain boundary junctions (GBJs). GBJs with width W much larger than the Josephson penetration depth λJ show Ic(B) dependencies that are close to those of ideal large Josephson junctions with overlap geometry. The Ic(B) dependencies are symmetrical with respect to B=0 and Ic decreases linearly with increasing applied magnetic field for B≤BJ1, where BJ1 is the lower critical field of the GBJ. Furthermore, Ic(B=0) increases linearly with increasing width of the GBJs as expected for Josephson junctions with overlap geometry. From the measured Ic(B) dependencies the temperature dependence of BJ1 and the London penetration depth could be derived.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 727-729 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated YBa2Cu3O7−δ grain boundary junction dc superconducting quantum interference devices (SQUIDs) with a square washer geometry design. The SQUIDs were formed in c-axis oriented epitaxial films with a single grain boundary of predetermined nature. These SQUIDs show perfectly periodic voltage-flux characteristics without hysteresis from 4.2 to 87 K. At 77 K intrinsic energy sensitivities of 1.5×10−30 and 3.0×10−30 J/Hz at 10 kHz were obtained for 60 and 110 pH SQUIDs, respectively. The intrinsic energy sensitivity limited by 1/f noise at 10 Hz was 1.2×10−28 and 5.5×10−28 J/Hz. The SQUID voltage noise was found to be almost identical to the voltage noise from one of its junctions. The flux focusing effect of the washer geometry was also measured.
    Type of Medium: Electronic Resource
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