ISSN:
0142-2421
Keywords:
Chemistry
;
Polymer and Materials Science
Source:
Wiley InterScience Backfile Collection 1832-2000
Topics:
Physics
Notes:
Nitrides of Ti, Al and TiAlx alloys were prepared by low energy ion implantation (3 keV N2+). The layer thickness was ∼ 10 nm. The nitride layers were characterized using XPS, UPS and a Kelvin probe. The insulating properties known for bulk AlN were found also for the prepared AlNimpl layers. The work functions for the alloys and the nitrides and their variation with the ion dose were determined. Peak parameters for the XP spectra deconvolution were established. Despite their thinness, the layers showed anodic stability in 0.5 M H2SO4 up to 1.3 V (SHE) for (TiAl)Nimpl and even up to 1.8 V (SHE) for AlNimpl. Above these potentials, the nitrides were oxidized to metal oxides.
Additional Material:
7 Ill.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1002/sia.740220192
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