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  • 1
    Electronic Resource
    Electronic Resource
    Nucleolar organizer region score and Ki-67 labelling index in high-grade gliomas and metastatic brain tumours (1991)
    Springer
    Acta neurochirurgica 109 (1991), S. 37-41 
    Details
    ISSN: 0942-0940
    Keywords: Glioma ; metastatic brain tumour ; Ki-67 ; nucleolar organizer regions
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Sixteen cases of malignant brain tumours comprising 6 anaplastic astrocytomas, 3 glioblastoma multiforme, 1 medulloblastoma and 6 metastatic brain tumours were investigated independently by a silver colloid method for nucleolar organizer regions (NORs) and an immunohistochemistry using a monoclonal antibody against a nuclear antigen, Ki-67, in proliferating cells. The correlation between the mean number of NORs and the percentage of Ki-67 labelled cells (Ki-67 labelling index) was examined. In addition, four normal brain tissue samples without neoplastic cells were stained for NOR. The mean number of NORs in these malignant brain tumours was significantly greater than that in normal astrocytes (p〈0.001). Moreover, both the mean number of NORs and the Ki-67 labelling index in metastatic brain tumours were significantly greater than those in high-grade gliomas (p〈0.001). The Ki-67 labelling index and the mean number of NORs in malignant brain tumours including metastatic brain tumours were found to be linearly related (r=0.86). These results suggest that the proliferative potential of malignant brain tumours could be evaluated by NOR score as well as Ki-67 labelling index and that such indices provide clear discrimination between high-grade gliomas and metastatic brain tumours.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01405695
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  • 2
    Electronic Resource
    Electronic Resource
    The KEK Slow-Positron Source (1994)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 175-178 (Nov. 1994), p. 205-208 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/00/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.175-178.205.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Factors determining the composition of strained GeSi layers grown with disilane and germane (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2579-2581 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth rates and compositions are reported for GeSi alloy films and superlattices epitaxially grown on both Ge(100) and Si(100) substrates using disilane and germane source gases in an ultrahigh vacuum chemical vapor deposition chamber. Although the growth rate changes rapidly with temperature the composition is nearly independent of it. Specifically, we find that the order of the adsorption reaction for disilane and germane is the same, resulting in the composition being determined by the partial pressures and by the ratio of the adsorption reaction rate constants. This ratio depends very weakly on temperature, if at all, and appears to vary slightly with the layer composition. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112644
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  • 4
    Electronic Resource
    Electronic Resource
    Activation efficiency of a B(square root of)3×(square root of)3/Si(111) structure covered with molecular beam deposited amorphous Si or SiOx (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 73-75 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electric activation efficiencies for a-Si/B(square root of)3×(square root of)3/Si(111) and a-Si/B/Si(100) systems were measured before and after annealing by Hall measurement. The efficiency of the latter was lower than that of the former before annealing. But, after annealing, it rose to the former's level, while the former's level remained unchanged. This difference strongly suggests that almost all boron atoms are activated at the a-Si/Si(111) interface because of the (square root of)3×(square root of)3 structure formation. The B(square root of)3×(square root of)3 structure was also preserved at the interface between the Si(111) and the SiOx layer, which had been fabricated by the codeposition of Si and O2 molecular beams at room temperature. The electric activation efficiency for B(square root of)3×(square root of)3 at the interface between SiOx and Si(111) was lower than that between a-Si and Si(111). An a-Si overlayer was effective to activate the boron which formed a (square root of)3×(square root of)3 structure at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103582
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  • 5
    Electronic Resource
    Electronic Resource
    ((square root of)3×(square root of)3)B structure on a (5×5)GexSi1−x/Si (111) surface (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1395-1397 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A ((square root of)3×(square root of)3)B structure was found to be formed on a (5×5) GexSi1−x/Si (111) surface on which Ga or Sn atoms did not form any superstructures. The critical B coverage at which a (7×7) pattern disappeared and only a ((square root of)3×(square root of)3) pattern was visible increased as the fraction (x) of Ge in the substrate layer increased. A Si epitaxial overlayer was grown on the ((square root of)3×(square root of)3)B/50 A(ring) Ge0.4Si0.6/Si (111) structure at a growth temperature of 300 °C. The observed (−2/3,4/3) reflection intensity in grazing x-ray diffraction was 50 times larger than that of a Si epitaxial layer grown on a ((square root of)3×(square root of)3)B/Si (111) structure under the same condition. On a GexSi1−x substrate, the B((square root of)3×(square root of)3) structure is well preserved at the interface probably because of relief of the interface strain that results from the small size of the boron atom.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104095
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  • 6
    Electronic Resource
    Electronic Resource
    In situ x-ray photoelectron spectroscopy and reflection high-energy electron diffraction study of diethylgalliumchloride adsorption on Si (100) and Si (111) surfaces (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1733-1735 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diethylgalliumchloride (DEGaCl) adsorption on Si(100) 2×1 and Si(111) 7×7 surfaces is studied by reflection high-energy electron diffraction and x-ray photoelectron spectroscopy. DEGaCl adsorbs molecularly on the (100) surface at room temperature, while the Ga—Cl bond dissociates on Si(111). The Si(111) 7×7 structure is greatly disturbed after DEGaCl exposure, indicating a strong interaction between the surface and the adsorbate. The spatial distribution of dangling bonds is thought to be responsible for the differences in the reactivity between the two surfaces. The Ga—ethyl bond dissociates on both Si(100) and (111) surfaces after annealing at 210 °C, and at the same time Cl desorbs from the surfaces. The Cl desorption process is also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104050
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  • 7
    Electronic Resource
    Electronic Resource
    Immunohistochemical expression of glutathione S-transferase placental type (GST-π), a detoxifying enzyme, in normal arachnoid villi and meningiomas (1990)
    Springer
    Virchows Archiv 417 (1990), S. 493-496 
    Details
    ISSN: 1432-2307
    Keywords: Arachnoid villi ; Meningioma ; Glutathione S-transferase placental type ; Cerebrospinal fluid
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Human normal dura mater containing arachnoid villi were examined for their expression of glutathione S-transferase placental type (GST-π), a detoxifying enzyme, using an immunohistochemical method. All of the arachnoid villi and arachnoid cells in five normal cases were found to have expression of GST-π, although no positive reaction for the enzyme was present in other tissues of the dura mater. The results show a possible role for arachnoid tissues in protecting human brain from hazardous xenobiotics in the cerebrospinal fluid. Twenty-six meningiomas were also examined for expression of the enzyme. Tissues of meningotheliomatous meningiomas were always positive for expression of the enzyme. Transitional meningiomas also showed the expression in their meningotheliomatous components. No staining reaction of GST-π was recognized in fibroblastic meningiomas except for two cases with a tendency to meningotheliomatous differentiation. The findings suggest a functional similarity between the arachnoid tissues and meningotheliomatous components of meningiomas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01625729
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  • 8
    Electronic Resource
    Electronic Resource
    Correlation between nucleolar organizer region score and bromodeoxyuridine labeling index in C6 glioma cell line (1991)
    Springer
    Journal of neuro-oncology 11 (1991), S. 149-155 
    Details
    ISSN: 1573-7373
    Keywords: BrdU-labeling index ; nucleolar organizer regions ; cyclic AMP ; C6 glioma cell ; proliferative potential
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary Correlation between the mean number of nucleolar organizer region-associated argyrophilic proteins (AgNORs) per cell and BrdU labeling index (LI), the percentage of S-phase cells, was investigatedin vitro using rat C6 glioma cells under several different conditions such as increased concentration of fetal calf serum (FCS) in a stepwise manner in medium. In addition, the effect of dibutyryladenosine cyclic monophosphate (d-cAMP) on the mean number of AgNORs and the BrdU LI was examined. C6 glioma cells cultured with no FCS showed 5.1% BrdU LI and 3.46 AgNOR score. BrdU LI and AgNOR score of the cells cultured with 1% FCS were 26.5% and 6.25, respectively. Those with 5% FCS were 44.7% and 8.41, with 10% FCS; 49.8% and 10.85, and with 20% FCS; 48.4% and 10.64. Treatment of d-cAMP with 10% FCS induced morphological differentiation and reduced BrdU LI (9.4%) and AgNORs score (4.90), compared with C6 cells cultured in medium containing 10% FCS without d-cAMP. Thus, the BrdU LI and AgNOR score of the C6 cells cultured under several different concentration of FCS were shown to be well linearly related (r=0.97) and both values were decreased with morphological alteration of C6 glioma cells in the presence of 1 mM d-cAMP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02390174
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