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  • 1
    Digitale Medien
    Digitale Medien
    Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum-well ridge-waveguide lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4479-4487 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We measured the increase in threshold currents due to lateral carrier diffusion in InGaAs/AlGaAs quantum-well ridge-waveguide laser diodes. The ridge stripes were fabricated by using both in situ monitored pure Cl2 reactive ion etching and selective wet etching to completely eliminate the spreading current in the conductive upper cladding layer while keeping the ridge sidewalls straight. After comparing the threshold data with a theoretical model, the ambipolar diffusion coefficient is found to be 22 cm2/s in the population-inverted InGaAs layer. This model is based on the calculated optical gain curve and the ambipolar carrier transport in the quantum-well and waveguiding layers. The dependence of carrier lifetime on the local carrier concentration is included in the calculation. Moreover, from another set of devices with the portions of the active layer outside the ridge stripes etched away, the surface recombination velocity is found to be around 1–2×105 cm/s.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357279
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  • 2
    Digitale Medien
    Digitale Medien
    High-efficiency and low-threshold InGaAs/AlGaAs quantum-well lasers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3932-3934 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: High-efficiency and low-threshold InGaAs/AlGaAs quantum-well laser structures have been grown by molecular beam epitaxy. Material characterization was performed on polyimide-planarized ridge-waveguide lasers. The measured material gain data are compared to theoretical calculations that include the valence-band mixing effects. Total injection current densities of 84 and 60 A/cm2 have been measured from 50-μm-wide laser diodes with cavity lengths of 2850 μm (from a double-quantum-well sample) and 1770 μm (from a single-well sample), respectively. Moreover, we have also obtained a cw threshold current as low as 2.1 mA from a 1.7-μm-wide and 140-μm-long as-cleaved ridge-waveguide device. In addition, the lateral current leakage for the double-quantum-well sample is found to be twice that of the single-well one.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357408
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  • 3
    Digitale Medien
    Digitale Medien
    Ring insertion reactions of silaaziridines with aldehydes and isocyanates (1993)
    s.l. : American Chemical Society
    Organometallics 12 (1993), S. 529-534 
    Details
    ISSN: 1520-6041
    Quelle: ACS Legacy Archives
    Thema: Chemie und Pharmazie
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1021/om00026a040
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  • 4
    Digitale Medien
    Digitale Medien
    Erratum: Misfit dislocations and critical thickness of heteroepitaxy [J. Appl. Phys. 69, 7901 (1991)] (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4009-4009 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349174
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  • 5
    Digitale Medien
    Digitale Medien
    Stress-related problems in silicon technology (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 53 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The silicon integrated-circuits chip is built by contiguously embedding, butting, and overlaying structural elements of a large variety of materials of different elastic and thermal properties. Stress develops in the thermal cycling of the chip. Furthermore, many structural elements such as CVD (chemical vapor deposition) silicon nitride, silicon dioxide, polycrystalline silicon, etc., by virtue of their formation processes, exhibit intrinsic stresses. Large localized stresses are induced in the silicon substrate near the edges and corners of such structural elements. Oxidation of nonplanar silicon surfaces produces another kind of stress that can be very damaging, especially at low oxidation temperatures. Mismatch of atomic sizes between dopants and the silicon, and heteroepitaxy produce another class of strain that can lead to the formation of misfit dislocations. Here we review the achievements to date in understanding and modeling these diverse stress problems.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349282
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  • 6
    Digitale Medien
    Digitale Medien
    Low-threshold InGaAs/GaAs strained layer single quantum well lasers with simple ridge waveguide structure (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7892-7894 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Double heterostructure InGaAs-GaAs strained-layer single quantum well ridge waveguide lasers grown by molecular beam epitaxy were fabricated by using in situ laser monitored reactive ion etching to form the ridges. Continuous-wave threshold current as low as 3.5 mA was obtained on a ridge laser diode of 3.3 μm wide and 215 μm long having cleaved mirrors. The lasing wavelength is at 0.988 μm and the measured differential external quantum efficiency is 61%.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347473
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  • 7
    Digitale Medien
    Digitale Medien
    Misfit dislocations and critical thickness of heteroepitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7901-7903 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: An expression is derived for the critical thickness of heteroepitaxial films by taking the energy minimization approach. It is exactly identical to the critical thickness obtained by Matthew and Blakeslee [J. Cryst. Growth 27, 118 (1974)] using a force balance approach, after allowing for a discrepancy judged to be an unmentioned approximation in the latter. The equivalence of the two formulations is explained conceptually. The reason is pointed out for the very different critical thickness obtained by People and Bean [Appl. Phys. Lett. 47, 322 (1985); 49, 229 (1986)] using the energy minimization approach. It is further shown that misfit dislocations do not appear en masse catastrophically when the critical thickness is reached. Rather, their density increases gradually with the epitaxial thickness, approaching only asymptotically a value required for a complete relief of film stress as the thickness tends to infinity. Any observed sudden mass appearance of misfit dislocations must be attributed to a substantial supercritical thickness actually existing, prior to nucleation of dislocations.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347476
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  • 8
    Digitale Medien
    Digitale Medien
    Stress from isolation trenches in silicon substrates (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 1092-1101 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Stress from isolation trenches in silicon integrated circuits has been studied using an analytical solution that the author recently obtained for the stress problem of a parallelepipedic inclusion in a three-dimensional semispace. The origin of the stress is assumed to be the thermal mismatch between the trench fill and the silicon substrate, or equivalently the intrinsic stress of the trench fill. The effect of various trench parameters such as the trench length, width, and depth, as well as the proximity to other trenches, are investigated for a number of cases. The results are shown for all stress components in order to provide an insight into the characteristics of the trench-induced stress. There are some surprises: Some examples are the existence of a tensile pocket in the stress component normal to the trench side, and that stress components both normal and parallel to the trench increase greatly in intensity as the trench becomes shorter.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.345795
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  • 9
    Digitale Medien
    Digitale Medien
    Minimum thickness MgO buffer layers for YBa2Cu3O7−x/GaAs structures: Assessment using photoluminescence of multiple-quantum-well structures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 987-989 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A GaAs-AlGaAs multiple-quantum-well structure was used as a substrate for overgrowth by a MgO buffer layer and superconducting YBa2Cu3O7−X thin film. The multiple quantum well serves as an in-depth probe for possible damage incurred by the semiconductor substrate due to the relatively high temperature and active oxygen environment that characterizes the superconductor growth. The thickness of the MgO buffer layer was varied and correlated with both the superconducting properties of the overlying YBa2Cu3O7−X and the quality of the substrate as determined by photoluminescence measurements of the multiple quantum wells. Both high quality superconducting YBa2Cu3O7−X and excellent photoluminescence spectra of the substrate were obtained with a MgO thickness of 450 A(ring) and quantum wells as close as 350 A(ring) to the surface.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.109841
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  • 10
    Digitale Medien
    Digitale Medien
    Stress-driven void growth in narrow interconnection lines (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2685-2687 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We consider a model of stress-driven void growth in interconnection lines that are narrower than the metal grain size. The metal line is imbedded in an SiO2 matrix at a temperature T0, and incurs tensile stress after being brought down to an annealing temperature Tann. A void nucleates at a particular grain boundary, along which the diffusion is assumed to be so fast that the stress relaxation at that grain boundary is nearly complete in a very short time. This is assumed to occur before the void spans the width of the line. Thereafter, the void continues to grow by matter transport through bulk diffusion, cascading down sequential tiers of grain boundaries, resulting in a layer of extra matter at each grain boundary for strain relaxation. The kinetics of the void growth is given analytically. The consideration of climbing dislocations is deferred for future analysis.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.105884
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