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  • 1
    Electronic Resource
    Electronic Resource
    Determination of enantiomerization barriers by computer simulation of interconversion profiles: enantiomerization of diaziridines during chiral inclusion gas chromatography (1992)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 114 (1992), S. 529-534 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00028a020
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  • 2
    Electronic Resource
    Electronic Resource
    Absence of interaction between tenoxicam and warfarin (1992)
    Springer
    European journal of clinical pharmacology 42 (1992), S. 227-229 
    Details
    ISSN: 1432-1041
    Keywords: Tenoxicam ; Warfarin ; drug interaction ; pharmacokinetics ; anticoagulation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Medicine
    Notes: Summary The influence of tenoxicam on plasma warfarin concentrations and on its anticoagulant effect has been studied in healthy volunteers. Tenoxicam did not alter the plasma warfarin concentration versus time profile. Treatment with it for 14 days had no effect on the average dose of warfarin required to maintain the prothrombin time within a specified range. The coumarin dose index, an indicator of warfarin sensitivity, remained unchanged during tenoxicam administration. The results demonstrate the lack of a clinically relevant effect of tenoxicam on warfarin-induced anticoagulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00278491
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of CdTe epitaxial films on p-InSb(111) by temperature gradient vapor transport deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1049-1051 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of high quality CdTe epitaxial films on p-InSb(111) by a simple method of temperature gradient vapor transport deposition was carried out to investigate the possibility of the existence of a two-dimensional electron gas with high mobility at CdTe/InSb heterointerfaces. From the x-ray diffraction analysis, the grown layer was found to be a CdTe epitaxial film. Photoluminescence measurements at 15 K showed that a CdTe film grown on InSb(111) in the temperature range between 180 and 280 °C appeared to have an optimum crystal perfection at a substrate temperature of about 245 °C. These results also indicated that the CdTe films grown above 245 °C contained a significant problem due to interdiffusion from the InSb substrates during the growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351360
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  • 4
    Electronic Resource
    Electronic Resource
    Structural and electrical properties of BaTiO3 thin films grown on p-InSb substrate by metalorganic chemical vapor deposition at low temperature (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1788-1790 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic chemical vapor deposition of BaTiO3 on p-InSb (111) using Ba(tmhd)2, Ti(OC3H7)4, and N2O via pyrolysis at low (∼300 °C) temperature was performed to produce high-quality BaTiO3/p-InSb (111) interfaces and BaTiO3 insulator gates with dielectric constants of high magnitude. Raman spectroscopy showed the optical phonon modes of a BaTiO3 thin film. The stoichiometry of the BaTiO3 film was investigated by Auger electron spectroscopy. Transmission electron microscopy showed that the BaTiO3 films had local epitaxial formations. Room-temperature capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples with the BaTiO3 insulator gates, and the interface state densities at the BaTiO3/p-InSb interfaces were approximately high 1011 eV−1 cm−2 at the middle of the InSb energy gap. The dielectric constant determined from the capacitance-voltage measurements was as large as 743. These results indicate that the BaTiO3 layers grown at low temperature can be used for both high-density dynamic-memory and high-speed applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109550
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  • 5
    Electronic Resource
    Electronic Resource
    Interdiffusion problems at CdTe/InSb heterointerfaces grown by temperature gradient vapor transport deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1101-1103 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdTe epitaxial films were grown by a simple method of temperature gradient vapor transport deposition on p-InSb (111) orientation substrates in the growth temperature range between 200 and 280 °C. Raman spectroscopy showed the optical phonon modes of the CdTe thin films and the formation of an indium telluride interfacial layer in the CdTe/InSb heterostructures. The stoichiometry of the CdTe/InSb heterostructures was observed by the Auger electron spectroscopy, and Auger depth profiles also demonstrated that the CdTe/InSb heterointerface was not abrupt. The results indicated that the films grown at about 265 °C posed a significant problem due to interdiffusion from the InSb substrates during the growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107681
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  • 6
    Electronic Resource
    Electronic Resource
    Optical and electrical properties of titanium dioxide films with a high magnitude dielectric constant grown on p-Si by metalorganic chemical vapor deposition at low temperature (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1407-1409 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic chemical vapor deposition of titanium dioxide (TiO2) on p-Si(100) using titanium isopropoxide and nitrous oxide via pyrolysis at relatively low (∼500 °C) temperature was performed to produce high quality TiO2/p-Si interfaces and to fabricate TiO2 insulator gates with a dielectric constant of high magnitude. Scanning electron microscopy shows that the surfaces of the TiO2 films have very smooth morphologies. From the x-ray diffraction analysis, the grown layer was found to be a polycrystalline film. Raman spectroscopy showed the optical phonon modes of a TiO2 thin film. The stoichiometry of the TiO2 film was investigated by Auger electron spectroscopy. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples of the Ag/TiO2/p-Si. The interface state density at the TiO2/p-Si interface was approximately high 1011 eV−1 cm−2 at the middle of the Si energy gap, and the dielectric constant determined from the capacitance-voltage measurements was as large as 73. These results indicate the TiO2 layers grown at relatively low temperature can be used for high density dynamic memory.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111898
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of PbTiO3 thin films on p-Si grown by metalorganic chemical vapor deposition at low temperature (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1104-1106 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metalorganic chemical vapor deposition of PbTiO3 using Pb (tmhd)2, Ti(OC3H7)4, and N2O via thermal pyrolysis at relatively low temperature (∼500 °C) was performed in order to produce PbTiO3 insulator gates with high quality PbTiO3/p-Si interfaces. Raman spectroscopy showed the several optical phonon modes of the PbTiO3/p-Si structure. The stoichiometry of the PbTiO3 films was observed by Auger electron spectroscopy. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples with a PbTiO3 insulator gate, and the interface state densities at the PbTiO3/p-Si were approximately 1011 eV−1 cm−2 at the middle of the Si energy gap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109794
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  • 8
    Electronic Resource
    Electronic Resource
    Allelic Variation in the TNF-β Gene Does Not Explain the Low TNF-β Response in Patients With Primary Biliary Cirrhosis (1991)
    Oxford, UK : Blackwell Publishing Ltd
    Scandinavian journal of immunology 34 (1991), S. 0 
    Details
    ISSN: 1365-3083
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Autoimmune disorders in humans are often associated with particular alleles of major histocompatibility genes. However, the chronic inflammatory liver disease primary biliary cirrhosis (PBC) has not been found to be correlated with certain haplotypes so far.Interestingly, an impaired production of tumour necrosis factor β (TNF-β) upon mitogen stimulation was observed for PBC patients, especially in the immunologically active stages of the disease. Furthermore, the identification of alleles of the TNF-β gene which differ in one unique amino acid, and in the production of TNF-β after phytohaemagglutinin stimulation, has prompted the idea of a possible linkage between the impaired TNF-β response in PBC and the genetic prevalence of a certain TNF haplotype.We report here a rapid method for typing the TNFB*1 and TNFB*2 genes by a standard polymerase chain reaction, PBC patients(n = 60)as well as randumized healthy controls (n = 179) of the Munich area were studied for the occurrence of the TNF alleles. No deviation was found in the PBC collective (0.7) for the TNFB*2 distribution when compared with the control (0.67).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-3083.1991.tb01598.x
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  • 9
    Electronic Resource
    Electronic Resource
    Pathogenicity and growth of Metarhizium anisopliae stably transformed to benomyl resistance (1990)
    Springer
    Current genetics 17 (1990), S. 129-132 
    Details
    ISSN: 1432-0983
    Keywords: Metarhizium anisopliae ; Benomyl-resistance ; Transformation ; Entomopathogen
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary The insect pathogenic hyphomycete Metarhizium anisopliae was transformed to benomyl resistance using pBENA3, a plasmid containing the benA3 allele from Aspergillus nidulans. The transformation rate was 9 transformants/50 μg DNA/2×106 viable protoplasts. Southern hybridization analyses indicated that the plasmid integrated by nonhomologous recombination at multiple loci. The sites of integration differed among transformants. There was no evidence for autonomous plasmid replication in the transformants. Transformants grew at benomyl concentrations up to 10 times that which inhibits wild type, and they were mitotically stable on either selective or non-selective medium or insect tissue. The transformants were pathogenic to the hornworm, Manduca sexta, producing both appressoria and the cuticle-degrading enzyme, chymoelastase, in the presence of 50 μg/ml of benomyl. These studies demonstrate the potential of using transgenic strains of entomopathogenic fungi along with other components of pest control such as fungicides.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00312857
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  • 10
    Electronic Resource
    Electronic Resource
    Role of NMDA and non-NMDA receptors in synaptic transmission in rat piriform cortex (1990)
    Springer
    Experimental brain research 82 (1990), S. 451-455 
    Details
    ISSN: 1432-1106
    Keywords: Glutamate receptors ; NMDA receptor ; Olfactory cortex ; DNQX ; AP5 ; Rat
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The pharmacology of synaptic transmission was studied in slices of rat piriform cortex using the selective non-NMDA glutamate receptor antagonist 6,7-dinitroquinoxaline-2,3-dione (DNQX) and the selective NMDA receptor antagonist D-2-amino-5-phosphonopentanoate (D-AP5). DNQX produced a dose-dependent blockade of synaptic transmission at both lateral olfactory tract and associational system synapses with half-maximal effects at about 2.5 μM. D-AP5 had no significant effects on field potentials recorded in medium containing 2.5 mM Mg++. However in low Mg++ (100–200 μM) medium, D-AP5 did reduce a slow component of postsynaptic responses in both synaptic systems. In Mg++-free medium, 20 μM DNQX did not completely block transmission; the remaining response components were blocked by D-AP5. These results suggest that normal synaptic transmission in the two main inputs to the superficial layers of piriform cortex is mediated by non-NMDA receptors but that NMDA receptors can also participate under conditions where the Mg++ block of the NMDA channel is alleviated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00231264
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