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  • 1990-1994  (4)
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Material
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Year
  • 1
    Electronic Resource
    Electronic Resource
    Trapping of hydrogen impurities in helium-implanted niobium and tantalum (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7770-7773 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Trapping of hydrogen impurities at helium precipitates in helium-implanted niobium and tantalum has been studied. The samples were implanted at room temperature with 100 keV 4He+ ions to doses of (0.6–36)×1016 cm−2. Some of the samples were postirradiated with 60 keV and 4 MeV protons, and annealed at elevated temperatures up to 1070 K. The helium and hydrogen concentration distributions were characterized simultaneously using the elastic-recoil-detection-analysis technique. The hydrogen distributions were also measured by the nuclear resonance reaction 1H(15N,αγ) 12C. The observed hydrogen distributions show that defect-hydrogen complexes at He bubbles are built from the ion-irradiation-induced and pre-existing vacancies and pre-existing hydrogen impurities migrated to the associated internal surfaces and that the hydrogen impurities saturate the surfaces. Recovery energies of about 2.1 eV in Nb and about 2.7 eV in Ta were observed for the hydrogen trapping defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356611
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Removal of the process-induced fluorine associated to chemical vapor deposition of tungsten onto a polycrystalline silicon gate structure by heat treatment in a hydrogen-containing atmosphere (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2112-2120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten was deposited from a gas mixture of hydrogen and tungsten hexafluoride onto a polycrystalline silicon gate structure in a chemical vapor deposition system. During the deposition process fluorine was also deposited as an undesired impurity. In order to remove the fluorine, heat treatments in the temperature range 550–1050 °C were performed in a hydrogen atmosphere. By this treatment it is possible to form volatile hydrofluoric acid and hence remove fluorine from the structure. Nuclear-resonance-broadening technique and secondary ion mass spectrometry were used for the analysis of fluorine. Fluorine was detected in all the samples except for the sample heat treated at 1050 °C. Moreover, etching of the polycrystalline silicon was observed. The gettering of fluorine, the etching of silicon and the observed formation of tungsten disilicide at 650 °C are discussed with respect to conceivable mechanisms. A thermodynamic study supporting the interpretations is also included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346566
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Defect formation in implantation of crystalline Si by MeV Si ions (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 990-995 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The distributions of vacancy-type defects and displaced Si atoms in Si(100) produced by the room-temperature implantation of 1014–1016 12-MeV 28Si+ ions/cm2 are measured with low-energy positron- and ion-beam techniques. The observed damage regions are reproduced by computer simulations. The distribution of displaced Si atoms coincides with the deposited energy distribution in elastic collisions. At the fluence of 1×1016 Si+/cm2, no crystalline structure was found in the peak region of the deposited energy at the depth of z=6 μm. Saturation of the divacancy concentration was observed at the ion fluences 3×1015 Si+/cm2 close to the surface (z〈0.7 μm) and 3×1014 Si+/cm2 deeper in the sample (z〉1 μm). In the region z〈0.7 μm, the divacancy concentration is a factor of 4 higher than that in the region z〉1 μm. This is also found in the simulated spatial structure of collision cascades.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345709
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Electronic stopping power of Si and Ge for MeV-energy Si and P ions (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 228-230 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic stopping powers of Si and Ge for 0–30 MeV 29Si and 29P ions are reported. The stopping power was studied by application of a technique of nuclear physics, the inverted analysis of Doppler-shift attenuation data. The measured values at 30 MeV are about 15% lower and at 2 MeV considerably higher than the predictions of the commonly used empirical electronic stopping powers by J. F. Ziegler, J. P. Biersack, and U. Littmark [The Stopping Power and Ranges of Ions in Matter (Pergamon, New York, 1985), Vol. 1]. The experimental nuclear stopping power was taken into account in the deduction of the electronic stopping power.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106972
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    Paper (German National Licenses)
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