Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
75 (1994), S. 2270-2277
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
There are several reasons to believe that the microstructural changes in Al-Si interconnects has to be described in terms of a spectrum of activation energies rather than in terms of a single activation energy. In this article, a method is presented to extract a spectrum of activation energies from an isothermal and a constant heating rate experiment. The formalism was applied to the relaxation behavior of passivated Al-1%Si interconnects. The method of analysis shows that the microstructural relaxation mechanisms in these interconnects are characterized by a narrow spectrum, centered at an energy of about 1.2 eV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.356291
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